Ordering number : ENA11A EMH1 P-Channel Power MOSFET V, 6.A, 6mΩ, Single EMH8 http://onsemi.com Features ON-resistance RDS(on)1 : mω(typ.) 1.8V drive Protection diode in Input Capacitance Ciss=11pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -- V Gate-to-Source Voltage VGSS ±1 V Drain Current (DC) ID --6. A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% --6 A Allowable Power Dissipation PD When mounted on ceramic substrate (1mm.8mm) 1. W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 4-1 Product & Package Information Package : EMH8 JEITA, JEDEC : - Minimum Packing Quantity :, pcs./reel. 8..1 EMH1-TL-H Taping Type : TL Marking 1..1 JG 1 4.. TL Lot No.... 1 : Source : Source : Source 4 : Gate : Drain 6 : Drain : Drain 8 : Drain Electrical Connection 8 6 EMH8 1 4 Semiconductor Components Industries, LLC, 1 July, 1 61 TKIM/O1PE TKIM TC-9 No. A11-1/
EMH1 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=V -- V Zero-Gate Voltage Drain Current IDSS VDS=--V, VGS=V --1 μa Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=--1V, ID=--1mA --.4 --1. V Forward Transfer Admittance yfs VDS=--1V, ID=--A 8. S RDS(on)1 ID=--A, VGS=--4.V 6 mω Static Drain-to-Source On-State Resistance RDS(on) ID=--1.A, VGS=--.V 1 44 mω RDS(on) ID=--.A, VGS=--1.8V 49 8 mω Input Capacitance Ciss 11 pf Output Capacitance Coss VDS=--1V, f=1mhz 1 pf Reverse Transfer Capacitance Crss 16 pf Turn-ON Delay Time td(on) 1.8 ns Rise Time tr ns See specified Test Circuit. Turn-OFF Delay Time td(off) 1 ns Fall Time tf 88 ns Total Gate Charge Qg 1 nc Gate-to-Source Charge Qgs VDS=--1V, VGS=--4.V, ID=--6.A 1.9 nc Gate-to-Drain Miller Charge Qgd. nc Diode Forward Voltage VSD IS=--6.A, VGS=V --.8 --1. V Switching Time Test Circuit V --4.V VIN PW=1μs D.C. 1% VIN G VDD= --1V D ID= --A RL=.Ω VOUT P.G Ω S EMH1 Ordering Information Device Package Shipping memo EMH1-TL-H EMH8,pcs./reel Pb Free and Halogen Free No. A11-/
EMH1 Static Drain-to-Source On-State Resistance, R DS (on) -- mω -- --6 -- --4 -- -- --1 8 6 4 1 --6.V --8.V --4.V --.V --1.8V ID -- VDS Ta= C --1.6V VGS = --1.V ID -- VGS --.1 --. --. --.4 --. --.6 --. --.8 --.9 --1. --. --.4 --.6 --.8 --1. --1. --1.4 --1.6 --1.8 --. Drain-to-Source Voltage, V DS -- V IT199 Gate-to-Source Voltage, V GS -- V IT199 RDS(on) -- VGS Ta= C 8 RDS(on) -- Ta I D = --.A --1.A --.A Static Drain-to-Source On-State Resistance, R DS (on) -- mω --1 --9 --8 -- --6 -- --4 -- -- --1 6 4 1 VDS= --1V C Ta= C -- C VGS= --1.8V, ID= --.A VGS = --.V, I D = --1.A V GS = --4.V, I D = --.A Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns 1 1. Gate-to-Source Voltage, V GS -- V IT1994 yfs -- ID V DS = --1V Ta= -- C C C.1 --.1 --.1 --1. IT1996 SW Time -- ID 1 V DD = --1V V GS = --4.V 1 1 -- --4 --6 --8 --1 --1 --6 --4 -- 4 6 8 1 1 14 16 td(off) tf t r t d (on) --.1 --.1 --1. --1 IT1998 Source Current, I S -- A Ambient Temperature, Ta -- C IS -- VSD --.1 --. --.4 --.6 --.8 --1. --1. Diode Forward Voltage, V SD -- V IT199 Ciss, Coss, Crss -- VDS f=1mhz Ciss, Coss, Crss -- pf --1 --1. --.1 --.1 1 1 Ta= C C -- C Ciss Coss Crss IT199 V GS =V -- --4 --6 --8 --1 --1 --14 --16 --18 -- Drain-to-Source Voltage, V DS -- V IT1999 No. A11-/
EMH1 Gate-to-Source Voltage, V GS -- V Allowable Power Dissipation, P D -- W --4. --4. --. --. --. --. --1. --1. --. 1.8 1.6 1. 1.4 1. 1..8.6.4. V DS = --1V I D = --6.A VGS -- Qg 4 6 8 1 1 14 Total Gate Charge, Qg -- nc IT16 PD -- Ta When mounted on ceramic substrate (1mm.8mm) A S O I DP = --6A (PW 1μs) --1 --1. ID= --6.A Operation in this area is limited by R DS (on). 1ms 1ms DC operation (Ta= C) 1ms 1μs --.1 Ta= C Single pulse When mounted on ceramic substrate (1mm --.1.8mm) --.1 --1. --1 Drain-to-Source Voltage, V DS -- V IT11 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT116 No. A11-4/
EMH1 Embossed Taping Specification EMH1-TL-H No. A11-/
EMH1 Outline Drawing EMH1-TL-H Land Pattern Example Mass (g) Unit.8 * For reference mm Unit: mm. 1.9.4. No. A11-6/
EMH1 Note on usage : Since the EMH1 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A11-/