SUPPLEMENTARY INFORMATION doi:1.138/nture11434 Supplementry Figure 1. (),() Cross-section HRTEM imges of thermlly nneled (3 o C, 6 min) nd photonneled (12 min) IGZO films on Si wfers. (c) RBS spectr of thermlly nneled nd photo-nneled IGZO thin films (Zn component includes G toms). (d) Refrctive index vlues of thermlly nneled nd photo-nneled IGZO films s function of wvelength. Thermlly nneled Epoxy Photo-nneled Epoxy IGZO IGZO Si wfer Si wfer Intensity (Counts) c 24 2 16 12 8 4 # 1 : In : Zn : O = 29.4 : 11.2 : 9.4 2.43 1 1 tom s cm -2, 6.~ 4.2 g cm -3 (7.1~ 1.27 nm ) # : In : Zn : O = 28. : 12.1 : 9.4 2.88 1 1 tom s cm -2, 6.1~ 4. g cm -3 (7.1~ 9.7 nm ) x1 In Zn O #1 29.4 : 11.2 : 9.4 # 28. : 12.1 : 9.4 O M esured D t Sim ultion D t Zn,G In Refrctive Index d 2. 2. 1.9 1.9 1.8 IGZO thin films Therml nneling (3 o C, 1hr) Photo-nneling (12min) 3 32 38 4 42 44 2 4 6 8 1 Energy (kev) Wvelength (nm) WWW.NATURE.COM/NATURE 1
RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 2. () XPS spectr of photo-nneled (3, 6, nd 12 min) IGZO thin films, nd () pek-fit results (full-width t hlf-mximum; FWHM nd % Are) of O1s peks s function of photonneling time. As reference, pek-fit result of IGZO thin film thermlly nneled t 3 o C is provided. 7 6 Photo-nneled (3 min) 7 6 Photo-nneled (6 min) 7 6 Photo-nneled (12 min) 4 4 4 3 3 3 2 2 2 1 1 1 36 34 32 3 28 26 Binding Energy (ev) 36 34 32 3 28 26 Binding Energy (ev) 36 34 32 3 28 26 Binding Energy (ev) min M-O M-O vc M-OH BE (ev) 29.79 31.4 32.21 FWHM (ev) 1.86 1.94 2. % Are 24.4.9 24.7 6 min M-O M-O vc M-OH BE (ev) 3.12 31.23 31.92 FWHM (ev) 1.61 1.8 1.76 % Are 71.4 16.3 12.3 12 min M-O M-O vc M-OH BE (ev) 3. 31.19 31.94 FWHM (ev) 1.61 1.74 1.81 % Are 72. 16. 11. 3 min M-O M-O vc M-OH BE (ev) 29.81 31.2 32.14 FWHM (ev) 1.61 1.1 1.78 % Are 71. 21.8 7.2 9 min M-O M-O vc M-OH BE (ev) 3.18 31.4 31.92 FWHM (ev) 1.61 1.7 1.88 % Are 71.9 1.1 13. Therml M-O M-O vc M-OH BE (ev) 3.4 31.43 32.42 FWHM (ev) 1.7 1.43 1. % Are 74.3 16.3 9.4 2 WWW.NATURE.COM/NATURE
SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 3. (),() Schemtics of DUV photo-nneling nd temperture-profile imges of IGZO/SiO 2 /Si smples fter DUV irrdition of 12 minutes using glss plte/sus grid plte (unintentionl heting condition) nd SUS plte/ulk SUS lock (cooling stge), respectively. (c),(d) Corresponding trnsfer chrcteristics of photo-nneled (12 min) IGZO TFTs using glss plte nd SUS plte, respectively. The chnnel length nd width of the device were 1 μm nd 1 μm, respectively. IGZO/SiO 2 /Si smple IGZO/SiO 2 /Si smple SUS plte Glss plte (1.1 mm) SUS grid plte Bulk SUS lock DUV 3 min DUV 12 min DUV 3 min DUV 12 min T su ~ 134 o C T su ~ 13 o C T su ~ 43 o C T su ~ 66 o C c 1-3 1-4 1-1 -6 1-7 1-8 1-9 1-1 1-11 1-12 1-13 Mo.=2.9~2.2 cm 2 V -1 s -1 DUV nneled (12 min) Glss plte V DS = 1 V -3-2 -1 1 2 3 1m 8m 6m 4m 2m m SQRT Drin Current (A 1/2 ) d 1-3 1-4 1-1 -6 1-7 1-8 1-9 1-1 1-11 1-12 1-13 Mo.=~1E-4 cm 2 V -1 s -1 DUV nneled (12 min) SUS plte V DS = 1 V -3-2 -1 1 2 3.8m.6m.4m.2m.m SQRT Drin Current (A 1/2 ) WWW.NATURE.COM/NATURE 3
RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 4. () Light sorption chrcteristics of cetonitrile, ZTO solution, nd solutions with individul metl precursors. (),(c) Trnsfer chrcteristics of photo-nneled ZTO nd IZTO TFT on Si/SiO 2 wfer (with N 2 purging). The chnnel length nd width of the device were 1 μm nd 1 μm, respectively. Asornce (.u.) 4 3 2 1 Acetonitrile only ZTO solution ZnCl 2 in cetonitrile SnCl 2 in cetonitrile 1-2 1-3 1-4 1-1 -6 1-7 1-8 1-9 1-1 1-11 1-12 1-13 1-14 V DS = 3 V 1 2 2 3 3 4 4 ZTO TFT Photo-nneled W/L = 1/1 μm GI : SiO 2 (2 nm) -3-2 -1 1 2 3 Wvelength (nm) c 1-2 1-3 1-4 1-1 -6 1-7 1-8 1-9 1-1 1-11 1-12 1-13 1-14 IZTO TFT Photo-nneled W/L = 1/1 μm GI : SiO 2 (2 nm) V DS = 3 V -3-2 -1 1 2 3 4 WWW.NATURE.COM/NATURE
SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure. () A cross-section schemtic, nd () trnsfer chrcteristics of IGZO TFTs fricted on Si/SiO 2 wfer with IGZO chnnel photo-nneled in N 2 nd ir mient for 12 min. (c) Summry of the field-effect moilities of photo-nneled IGZO, IZO, In 2 O 3, ZTO, nd IZTO TFTs fricted on SiO 2 /Si wfers (W/L = 1/1 μm). For ZTO nd IZTO TFTs, reference devices were fricted t o C using rpid therml nneling system. Photo-nneled IGZO (12 min) 1. with N 2 purging 2. in ir mient 3. No chnnel isoltion SiO 2 (GI) c IZO (S) Si wfer (G) 1-3 1-4 1-1 -6 1-7 1-8 1-9 1-1 1-11 1-12 1-13 Chnnel Anneling method Anneling time (min) IGZO IZO In 2 O 3 ZTO IZTO IGZO IZO (D) Photo-nneling Photo-nneling Photo-nneling Photo-nneled IGZO TFT GI : SiO 2 (2 nm) W/L = 1/1 μm VDS = 1 V nneled in N 2 nneled in ir -3-2 -1 1 2 3 Averge moility (cm 2 V -1 s -1 ) 3.7 6 1.9 9 1.6 12 2.3 3.1 6.1 9 1.2 12.4 3 1.9 6 2.8 9 3. 12 3.6 Therml (@ o C) 1 4. Photo-nneling 9 inctive Therml (@ o C) 1 1. Photo-nneling 9 inctive WWW.NATURE.COM/NATURE
RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 6. (),() Sttisticl dt nd verge field-effect moility of photo-nneled IGZO TFTs on SiO 2 /Si wfer. (c),(d) Sttisticl dt nd verge field-effect moility of photo-nneled In 2 O 3 TFTs on SiO 2 /Si wfer. The field-effect moilities were otined from ~2 trnsistors for ech cse, nd the error rs indicte the minimum nd mximum moilities. The chnnel length nd width of the device were 1 μm nd 1 μm, respectively. 1 1 DUV nneling time 3 minutes 6 minutes 9 minutes 12 minutes IGZO TFT on Si wfer Field-effect Moility (cm 2 /Vs) 3. 2. 2. 1. 1.. IGZO TFT on Si wfer c.. 1. 1. 2. 2. 3. 1 8 6 4 2 Moility (cm 2 V -1 s -1 ) DUV nneling time 3 minutes 6 minutes 9 minutes 12 minutes In 2O 3 TFT on Si wfer 1 2 3 4 Moility (cm 2 V -1 s -1 ) Field-effect Moility (cm 2 /Vs). d 4 3 2 1 3 6 9 12 DUV Anneling Time (min) In 2O 3 TFT on Si wfer 3 6 9 12 DUV Anneling Time (min) 6 WWW.NATURE.COM/NATURE
SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 7. Electricl properties of thermlly nneled nd photo-nneled IGZO, IZO, nd In 2 O 3 TFTs fricted on glss sustrtes using 3 nm-thick Al 2 O 3 lyer s gte dielectric (for over 2 trnsistors for ech). Moility (cm 2 V -1 s -1 ) IGZO IZO In 2 O 3 Therml UV Therml UV Therml UV MAX 8.6 1.32 4.48.24 12.92 13.88 MIN.1 6.91 2.44 2.81 6.49 8.43 Averge 6.1 8.76 3.72 4.43 1.31 11.29 Devition.74.98.63.9 1. 1.62 V T (V) IGZO IZO In 2 O 3 Therml UV Therml UV Therml UV MAX.68 2.23 1.13 3.84 -.6 1.78 MIN.3 1.1-1.47 3.21-2.73.48 Averge.3 1.88.24 3.2-1. 1.16 Devition.2.26.62.18.7.3 SS (V decde -1 ) IGZO IZO In 2 O 3 Therml UV Therml UV Therml UV MAX.13.28.622.136.6.31 MIN.27.121.96.6.361.148 Averge.18.169.238.14.49.23 Devition.4.28.18.19.68.42 WWW.NATURE.COM/NATURE 7
RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 8. Distriution of threshold voltges nd suthreshold swing vlues of thermlly nneled nd photo-nneled IGZO TFTs on glss sustrtes (for over 2 trnsistors for ech). The chnnel lengths nd widths of mesured devices were 1 μm nd 1 μm, respectively. 2 IGZO TFT (glss) 2 IZO TFT (glss) 1 In2O3 TFT (glss) 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling 1 1-4 -3-2 -1 1 2 3 4 VT (V) -4-3 -2-1 1 2 3 4 VT (V) -4-3 -2-1 1 2 3 4 VT (V) 2 IGZO TFT (glss) 2 IZO TFT (glss) 2 In2O3 TFT (glss) 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling 1 1 1...1.1.2.2 Suthreshold Slope (V decde -1 )...1.1.2.2 Suthreshold Slope (V decde -1 ).1.2.3.4..6.7 Suthreshold Slope (V decde -1 ) 8 WWW.NATURE.COM/NATURE
SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 9. Opticl trnsmittnce spectr of () re, nd () DUV-processed PAR films (3~8 nm). In the cse of DUV-processed PAR film, to crete n irrdition condition similr to TFT friction, 3 nm-thick Al 2 O 3 lyer ws first deposited on the PAR film nd then IGZO solution ws coted over the Al 2 O 3 lyer. Afterwrds, DUV irrdition ws crried out in N 2 mient nd finlly the IGZO film ws etched y wet-etching process. 1 9 Trnsmittnce (%) 8 7 6 4 3 2 1 Bre PAR film DUV processed PAR film (with Al 2O 3 GI coted on top) 3 4 4 6 6 7 7 8 Wvelength (nm) WWW.NATURE.COM/NATURE 9
RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 1. Threshold voltge shift of photo-nneled IGZO TFTs under positive gte-is stress (PBS) condition (V GS = + V, V DS = +.1 V, t = 1, sec), () unpssivted, on PAR sustrte, () PMMA pssivted, on PAR sustrte, nd (c) unpssivted, on glss sustrte. (d) Threshold voltge shift of 3 o C nneled IGZO TFTs, unpssivted, on glss sustrte. c 1-3 1-4 s 6 s 1-36 s 1-6 3.9 ks 1 ks 1-7 1-8 1-9 1-1 1-11 1-12 1-13 1-7 1-8 1-9 1-1 1-11 1-12 1-13 V DS = 1 V W/L = 1/1 μm -1-1 1-3 1-4 s 6 s 1-36 s 1-6 3.9 ks 1 ks V DS = 1 V W/L = 1/1 μm ΔV T = 1.12 V -1-1 ΔV T = 4.61 V d 1-3 1-4 s 6 s 1-36 s 1-6 3.9 ks 1 ks 1-7 1-8 1-9 1-1 1-11 1-12 1-13 1-7 1-8 1-9 1-1 1-11 1-12 1-13 V DS = 1 V W/L = 1/1 μm -1-1 1-3 1-4 s 6 s 1-36 s 1-6 3.9 ks 1 ks V DS = 1 V W/L = 1/1 μm ΔV T = 3.21 V ΔV T =.86 V -1-1 1 WWW.NATURE.COM/NATURE
SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 11. Surfce morpholgies nd roughness vlues of Al 2 O 3 gte dielectric lyers deposited on glss sustrte, nd on PAR sustrte. Al 2 O 3 on glss Al 2 O 3 on PAR Roughness Al 2 O 3 Ti/Au Glss Roughness Al 2 O 3 Ti/Au PAR Root-men-squre.446 nm Root-men-squre.733 nm Pek-to-vlley 3.919 nm Pek-to-vlley 7.79 nm WWW.NATURE.COM/NATURE 11
RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 12. Molr concentrtion of metllic precursors in IGZO, IZO, IZTO nd In 2 O 3 solutions. The IGZO precursor solution is composed of.8 M of indium nitrte hydrte,.12 M of gllium nitrte hydrte, nd.27 M of zinc cette dihydrte in 2-ME. The IZO precursor solution is composed of. M of indium nitrte hydrte, nd. M of zinc cette dihydrte in 2-ME. The In 2 O 3 precursor solution is composed of.1 M of indium nitrte hydrte in 2-ME). Chnnel mteril indium nitrte hydrte Precursor concentrtion (M) gllium nitrte hydrte zinc cette dihydrte zinc chloride tin chloride Solvent IGZO.8.12.27 - - 2-ME IZO. -. - - 2-ME In 2 O 3.1 - - - - 2-ME IZTO.3 - -.12.12 2-ME 12 WWW.NATURE.COM/NATURE