7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo drive amplifier Uninterruptible power supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless without specified) Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage CES GES 6 ± IC Continuous Collector current ICP -IC 1ms 1 Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC ICP 1 device Continuous 1ms 6 ± 3 6 W Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage verage output current Surge current (Non-Repetitive) PC RRM RRM IO IFSM 1 device Hz/6Hz sine wave Tj=1 C, 1ms 1 6 8 3 W I t (Non-Repetitive) I t half sine wave 613 s Operating junction temperature Tj +1 C Storage temperature Tstg - to +1 C Isolation between and copper base * iso C : 1 minute C voltage between thermistor and others *3 C Mounting screw torque 3. *1 N m Converter Brake Inverter *1 Recommendable value :. to 3. N m (M) * ll s should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 1 to should be connected together and shorted to copper base.
7MBRS6 Elecical characteristics (Tj= C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES GE(th) CE(sat) CE=6, GE= CE=, GE=± CE=, IC=m GE=1, Ic= chip. 7.8 1.8 1.9 1.. 8.. m µ Input capacitance Turn-on time Cies GE=, CE=1, f=1mhz CC=3 IC=.. 1..6 pf µs (i) GE=±1.8 Turn-off RG=1Ω. 1...3 Forward on voltage F IF= chip 1.7 1.9.6 Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current r ICES IGES IF= CES=6, GE= CE=, GE=±.3 1.. µs m µ Collector-Emitter saturation voltage CE(sat) IC=3, GE=1 chip 1.8 1.9. Turn-on time CC=3 IC=3.. 1..6 µs Turn-off time GE=±1 RG=8Ω.. 1..3 Reverse current IRRM R=6 1. m Forward on voltage FM IF= chip 1.1 1. 1. Reverse current IRRM R=8 1. m Resistance R T= C Ω T=1 C 6 9 B value B T=/ C 33 337 3 K Thermistor Converter Brake Inverter Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT.63 Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD 1.33 Brake IGBT 1. C/W Converter Diode.9 Contact thermal resistance * Rth(c-f) With thermal compound. * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 1(P) (P 1 ) [B ra k e ] [In v er ter ] [Thermistor] 8 9 (G u) 18 (G v) 16 (G w ) 1(R) (S) 3(T) 1 9 (E u ) 1 7 (E v ) 1 (E w ) 7 (B ) (U ) ( ) 6 (W ) 1 (G b) 13 (G x) 1 (G y) 11 (G z) 1 (E n ) 3(N) (N 1 )
Characteristics (Representative) 7MBRS6 1 Tj= o C (typ.) 1 Tj= 1 o C (typ.) 1 GE= 1 1 1 GE= 1 1 8 6 8 6 1 1 1 3 1 3 1 GE=1 (typ.) 1 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= o C (typ.) 1 Tj= o C Tj= 1 o C 8 8 6 6 Ic=1 Ic= Ic= 1 3 1 1 Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= o C Dynamic Gate charge (typ.) cc=3, Ic=, Tj= o C 1 Capacitance : Cies, Coes, Cres [ pf ] 1 Cies Coes Cres 3 1 1 1 Gate - Emitter voltage : GE [ ] 1 1 1 3 3 1 1 3 Gate charge : Qg [ nc ]
7MBRS6 1 Switching time vs. Collector current (typ.) cc=3, GE=±1, Rg=1Ω, Tj= C 1 Switching time vs. Collector current (typ.) cc=3, GE=±1, Rg=1Ω, Tj=1 C Switching time :,,, [ nsec ] 1 Switching time :,,, [ nsec ] 1 1 6 8 1 6 8 Switching time vs. Gate resistance (typ.) cc=3, Ic=, GE=±1, Tj= C Switching loss vs. Collector current (typ.) cc=3, GE=±1, Rg=1Ω Switching time :,,, [ nsec ] 1 1 Switching loss : Eon, Eoff, Err [ mj/pulse ] 3 1 Eon(1 o C) Eoff(1 o C) Eon( o C) Eoff( o C) Err(1 o C) 1 1 1 Gate resistance : Rg [ Ω ] Err( o C) 6 8 1 1 Switching loss vs. Gate resistance (typ.) cc=3, Ic=, GE=±1, Tj=1 C 1 Reverse bias safe operating area +GE=1, -GE<1, = Rg>1Ω, = Tj<1 C = Switching loss : Eon, Eoff, Err [ mj/pulse ] 8 6 Eon Eoff 1 8 6 Err 1 1 Gate resistance : Rg [ Ω ] 6 8
7MBRS6 1 Forward current vs. Forward on voltage (typ.) 3 Reverse recovery characteristics (typ.) cc=3, GE=±1, Rg=1Ω 1 Tj=1 o C Forward current : IF [ ] 8 6 Tj= o C Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] 1 r(1 o C) r( o C) Irr(1 o C) 1 3 Forward on voltage : F [ ] Irr( o C) 1 6 8 Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) 1 1 Tj= o C Tj= 1 o C Forward current : IF [ ] 8 6...8 1. 1.6. Forward on voltage : FM [ ] Transient thermal resistance [ Thermistor ] Temperature characteristic (typ.) 1 Thermal resistanse : Rth(j-c) [ o C/W ] 1.1 FWD[Inverter] IGBT[Brake] Conv. Diode IGBT[Inverter] Resistance : R [ k Ω ] 1 1.1.1.1.1 1 Pulse width : Pw [ sec ].1-6 - - 6 8 1 1 1 16 18 Temperature [ o C ]
7MBRS6 7 Tj= o C (typ.) 7 Tj= 1 o C (typ.) 6 GE= 1 1 6 GE= 1 1 3 3 1 1 1 1 1 3 1 3 7 GE=1 (typ.) 1 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= o C (typ.) 6 Tj= o C Tj= 1 o C 8 3 1 6 Ic= 6 Ic= 3 Ic= 1 1 3 1 1 Gate - Emitter voltage : GE [ ] 1 Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= o C Dynamic Gate charge (typ.) cc=3, Ic=3, Tj= o C Capacitance : Cies, Coes, Cres [ pf ] 1 Cies Coes 3 1 1 1 Gate - Emitter voltage : GE [ ] Cres 1 1 1 3 3 1 1 Gate charge : Qg [ nc ]
7MBRS6 Outline Drawings, mm