7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo drive amplifier Uninterruptible power supply Maximum ratings and characteristics bsolute maximum ratings (Tc=2 C unless without specified) Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage CES GES 6 ±2 IC Continuous 3 Collector current ICP -IC 1ms 6 3 Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC ICP 1 device Continuous 1ms 12 6 ±2 2 4 W Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage verage output current Surge current (Non-Repetitive) PC RRM RRM IO IFSM 1 device Hz/6Hz sine wave Tj=1 C, ms 8 6 8 3 2 W I 2 t (Non-Repetitive) I 2 t half sine wave 221 2 s Operating junction temperature Tj +1 C Storage temperature Tstg -4 to +12 C Isolation between and copper base *2 is : 1 minute C 2 voltage between thermistor and others *3 C 2 Mounting screw torque 3. *1 N m Converter Brake Inverter *1 Recommendable value : 2. to 3. N m (M) *2 ll s should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and to 24 should be connected together and shorted to copper base.
7MBR3S6 Elecical characteristics (Tj=2 C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES GE(th) CE(sat) CE=6, GE= CE=, GE=±2 CE=2, IC=3m GE=1, Ic=3 chip. 7.8 1.8 1.9 1..2 8. 2.4 m µ Input capacitance Turn-on time Cies GE=, CE=, f=1mhz CC=3 IC=3 3.4.2 1.2.6 pf µs (i) GE=±1.8 Turn-off RG=82Ω.4 1...3 Forward on voltage F IF=3 chip 1.8 1.9 2.6 Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current r ICES IGES IF=3 CES=6, GE= CE=, GE=±2.3 1..2 µs m µ Collector-Emitter saturation voltage CE(sat) IC=2, GE=1 chip 1.8 1.9 2.4 Turn-on time CC=3 IC=2.4.2 1.2.6 µs Turn-off time GE=±1 RG=12Ω.4. 1..3 Reverse current IRRM R=6 1. m Forward on voltage FM IF=3 chip 1.1 1.2 1. Reverse current IRRM R=8 1. m Resistance R T=2 C Ω T= C 46 49 2 B value B T=2/ C 33 337 34 K Thermistor Converter Brake Inverter Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT 1.4 Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD 2. Brake IGBT 1.6 C/W Converter Diode 1.33 Contact thermal resistance * Rth(c-f) With thermal compound. * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) 22(P1) [Brake] [Inverter] [Thermistor] 8 9 2(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 19(Eu) 17(Ev) 1(Ew) 7(B) 4(U) () 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) (En) 23(N) 24(N1)
Characteristics (Representative) 7MBR3S6 7 Tj= 2 (typ.) 7 Tj= 12 (typ.) 6 GE= 2 1 12 6 GE= 2 1 12 4 3 2 4 3 2 1 2 3 4 Collector - Emitter voltage : CE [ ] 1 2 3 4 Collector - Emitter voltage : CE [ ] 7 GE=1 (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 2 (typ.) 6 Tj= 2 Tj= 12 8 4 3 2 Collector - Emitter voltage : CE [ ] 6 4 2 Ic= 6 Ic= 3 Ic= 1 1 2 3 4 Collector - Emitter voltage : CE [ ] 1 2 2 Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= 2 Dynamic Gate charge (typ.) cc=3, Ic=3, Tj= 2 2 4 2 Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Collector - Emitter voltage : CE [ ] 3 2 1 Gate - Emitter voltage : GE [ ] Cres 1 2 2 3 3 Collector - Emitter voltage : CE [ ] 1 2 Gate charge : Qg [ nc ]
7MBR3S6 Switching time vs. Collector current (typ.) cc=3, GE=±1, Rg=82Ω, Tj=2 C Switching time vs. Collector current (typ.) cc=3, GE=±1, Rg=82Ω, Tj=12 C Switching time :,,, [ nsec ] Switching time :,,, [ nsec ] 2 3 4 2 3 4 Switching time vs. Gate resistance (typ.) cc=3, Ic=3, GE=±1, Tj=2 C 3. Switching loss vs. Collector current (typ.) cc=3, GE=±1, Rg=82Ω Switching time :,,, [ nsec ] Switching loss : Eon, Eoff, Err [ mj/pulse ] 2. 2. 1. 1.. Eon(12 ) Eoff(12 ) Eon(2 ) Eoff(2 ) Err(12 ) 3 Gate resistance : Rg [ Ω ] Err(2 ). 2 3 4 6 6 Switching loss vs. Gate resistance (typ.) cc=3, Ic=3, GE=±1, Tj=12 C 8 Reverse bias safe operating area +GE=1, -GE<1, = Rg>82Ω, = Tj<12 C = Eon Switching loss : Eon, Eoff, Err [ mj/pulse ] 4 3 2 1 Eoff 6 4 2 Err 3 Gate resistance : Rg [ Ω ] 2 4 6 8 Collector - Emitter voltage : CE [ ]
7MBR3S6 7 Forward current vs. Forward on voltage (typ.) 3 Reverse recovery characteristics (typ.) cc=3, GE=±1, Rg=82 Ω 6 Tj=12 Tj=2 Forward current : IF [ ] 4 3 2 Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] r(12 ) r(2 ) Irr(12 ) Irr(2 ) 1 2 3 Forward on voltage : F [ ] 2 3 4 Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) 7 6 Tj= 2 Tj= 12 Forward current : IF [ ] 4 3 2..4.8 1.2 1.6 2. Forward on voltage : FM [ ] Transient thermal resistance [ Thermistor ] Temperature characteristic (typ.) 2 Thermal resistanse : Rth(j-c) [ /W ] 1 FWD[Inverter] IGBT[Brake] Conv. Diode IGBT[Inverter] Resistance : R [ k Ω ] 1.1..1.1.1 1 Pulse width : Pw [ sec ].1-6 -4-2 2 4 6 8 12 14 16 18 Temperature [ ]
7MBR3S6 Tj= 2 (typ.) Tj= 12 (typ.) 4 GE= 2 1 12 4 GE= 2 1 12 3 2 3 2 1 2 3 4 Collector - Emitter voltage : CE [ ] 1 2 3 4 Collector - Emitter voltage : CE [ ] GE=1 (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 2 (typ.) 4 Tj= 2 Tj= 12 8 3 2 Collector - Emitter voltage : CE [ ] 6 4 2 Ic= 4 Ic= 2 Ic= 1 2 3 4 Collector - Emitter voltage : CE [ ] 1 2 2 Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= 2 Dynamic Gate charge (typ.) cc=3, Ic=2, Tj= 2 2 Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Cres Collector - Emitter voltage : CE [ ] 4 3 2 2 1 Gate - Emitter voltage : GE [ ] 1 2 2 3 3 Collector - Emitter voltage : CE [ ] 2 4 6 8 12 Gate charge : Qg [ nc ]
7MBR3S6 Outline Drawings, mm