6V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max I D max T C = +25 C mω @ V GS = V 47.6A 6mΩ @ V GS = 4.5V 39.5A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q, supported by a PPAP and is ideal for use in: Engine Management Systems Body Control Electronics DCDC Converters Features and Benefits Rated to +75 C Ideal for High Ambient Temperature Environments % Unclamped Inductive Switching ensures more reliable and robust end application High Conversion Efficiency Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: PowerDI56-8 (Type C) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-22, Method 28 Weight:.97 grams (Approximate) S D D G D S2 G G2 Top View Pin Bottom View G2 Pin out Top View S Equivalent Circuit S2 Ordering Information (Note 5) Notes: Part Number Case Packaging -3 PowerDI56-8 (Type C) 2,5/Tape & Reel. No purposely added lead. Fully EU Directive 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. 2. See http:///quality/lead_free.html for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. Automotive products are AEC-Q qualified and are PPAP capable. Refer to http:///product_compliance_definitions.html. 5. For packaging details, go to our website at http:///products/packages.html. Marking Information D D H6LD = Manufacturer s Marking H6LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 6 = 26) WW = Week ( to 53) YY WW Document number: DS3857 Rev. 2-2 S G S2 G2 of 7 May 26
Maximum Ratings (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 7) Continuous Drain Current (Note 6) T C = +25 C T C = + C T A = +25 C T A = +7 C Pulsed Drain Current (µs pulse, duty cycle = %) I DM 9 A Maximum Continuous Body Diode Forward Current (Note 7) I S 3 A Avalanche Current, L =.mh I AS A Avalanche Energy, L =.mh E AS 2 mj I D I D 47.6 33.7 3..9 A A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T A = +25 C P D 2.8 W Thermal Resistance, Junction to Ambient (Note 6) R θja 53 C/W Total Power Dissipation (Note 7) T C = +25 C P D 37.5 W Thermal Resistance, Junction to Case (Note 7) R θjc 4 C/W Operating and Storage Temperature Range T J, T STG -55 to +75 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV DSS 6 V V GS = V, I D = ma Zero Gate Voltage Drain Current I DSS µa V DS = 48V, V GS = V Gate-Source Leakage I GSS ± na V GS = ±2V, V DS = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH) 3 V V DS = V GS, I D = 25μA 8.5 V GS = V, I D = 2A Static Drain-Source On-Resistance R DS(ON) mω.9 6 V GS = 4.5V, I D = 2A Diode Forward Voltage V SD.9.2 V V GS = V, I S = 2A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss 265 pf Output Capacitance V DS = 3V, V GS = V, C oss 45 pf f = MHz Reverse Transfer Capacitance C rss 58 pf Gate Resistance R g.67 Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = 4.5V) Q g 2.3 nc Total Gate Charge (V GS = V) Q g 4.2 nc Gate-Source Charge Q gs 5.9 nc Gate-Drain Charge Q gd 9.3 nc Turn-On Delay Time t D(ON) 5.7 ns Turn-On Rise Time t R 8.8 ns Turn-Off Delay Time t D(OFF) 2.8 ns Turn-Off Fall Time t F 7.4 ns Body Diode Reverse Recovery Time t RR 34.5 ns Body Diode Reverse Recovery Charge Q RR 37.5 nc V DS = 3V, I D = 2A V DD = 3V, V GS = V, I D = 2A, R G = 3Ω I F = 2A, di/dt = A/μs Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. Document number: DS3857 Rev. 2-2 2 of 7 May 26
R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 5. 45. 4. 35. 3. V GS = 4.5V V GS = 4.V V GS =.V 3 25 2 V DS = 5V 25. V GS = 3.5V 5 75 o C 2. 5.. 5.. V GS = 3.V V GS = 2.5V.5.5 2 2.5 3 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic 5 5 o C 25 o C 25 o C -55 o C 85 o C.5 2 2.5 3 3.5 4 V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic.4..2.8.6. V GS = 4.5V.4.8 V GS =.V.2 I D = 2A.6.2.8.6 5 5 2 25 3 35 4 45 5 I D, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage V GS = 4.5V 75 o C 5 o C 25 o C.8.6.4 4 8 2 6 2 V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic V GS = V, I D = 2A.4.2 85 o C.2. 25 o C V GS = 4.5V, I D = 2A.8-55 o C.8.6 5 5 2 25 3 I D, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature Document number: DS3857 Rev. 2-2 3 of 7.6-5 -25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Junction Temperature May 26
V GS (V) I D, DRAIN CURRENT (A) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) ADVANCE INFORMATION R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) V GS(TH), GATE THRESHOLD VOLTAGE (V).2 2.5.6 V GS = 4.5V, I D = 2A 2.2 I D = ma.5.8 V GS = V, I D = 2A I D = 25µA.4-5 -25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Junction Temperature 2 V GS = V.5-5 -25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs Junction Temperature C iss f = MHz 5 C oss 5 T J = 75 o C T J = 5 o C T J = 25 o C T J = 85 o C T J = 25 o C T J = -55 o C C rss.3.6.9.2.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 5 5 2 25 3 35 4 45 5 55 6 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance 9 R DS(ON) Limited 8 7 6 5 P W = µs P W = µs P W = µs P W = ms 4 3 2 V DS = 3V, I D = 2A 5 5 2 25 3 35 4 45 Q g (nc) Figure. Gate Charge.. T J(Max) = 75 T C = 25 Single Pulse DUT on Infinite Heatsink V GS = V P W = ms P W = ms P W = s. V DS, DRAIN-SOURCE VOLTAGE (V) Figure 2. SOA, Safe Operation Area Document number: DS3857 Rev. 2-2 4 of 7 May 26
r(t), TRANSIENT THERMAL RESISTANCE D=.7 D=.5 D=.9 D=.3. D=. D=.5 D=.2. D=. D=.5 D=Single Pulse R θjc (t) = r(t) * R θjc R θjc = 4 /W Duty Cycle, D = t/t2. E-6 E-5.... t, PULSE DURATION TIME (sec) Figure 3. Transient Thermal Resistance Document number: DS3857 Rev. 2-2 5 of 7 May 26
Package Outline Dimensions Please see http:///package-outlines.html for the latest version. PowerDI56-8 (Type C) y L E2 La D D x E E Ø. Depth.7±.3 b(8x) e/2 b(8x) b2(2x) D3 k k L4 M L c e (4x) DETAIL A (4x) A Seating Plane A DETAIL A PowerDI56-8 (Type C) Dim Min Max Typ A.9.. A.5.2 b.33.5.4 b.3.366.333 b2.2.35.25 c.23.33.277 D 5.5 BSC D 4.85 4.95 4.9.4.6.5 D3 - - 3.98 E 6.5 BSC E 5.75 5.85 5.8 E2 3.56 3.76 3.66 e.27bsc k - -.27 k.56 - - L.5.7.6 La.5.7.6 L.5.2.75 L4 - -.25 M 3.5 3.7 3.65 x - -.4 y - -.9 θ 2 θ 6 8 7 All Dimensions in m Suggested Pad Layout Please see http:///package-outlines.html for the latest version. PowerDI56-8 (Type C) Y3 Y2 8 X X3 X X4 C X2 G Y G Y(4x) Dimensions Value (in mm) C.27 G.66 G.82 X.6 X 3.9 X2.65 X3.65 X4 4.42 Y.27 Y.2 Y2 3.8 Y3 6.6 Document number: DS3857 Rev. 2-2 6 of 7 May 26
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