Protection diode in Halogen free compliance

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Ordering number : ENA14C CPH6444 N-Channel Power MOSFET 6V, 4.A, 8mΩ, Single CPH6 http://onsemi.com Features Low ON-resistance 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 6 V Gate to Source Voltage VGSS ± V Drain Current (DC) ID 4. A Drain Current (Pulse) IDP PW μs, duty cycle 1% 18 A Allowable Power Dissipation PD When mounted on ceramic substrate (9mm.8mm) 1.6 W Channel Temperature Tch C Storage Temperature Tstg -- to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 18A-.8.6 1.6.6.9..9 6 4 1.9.4.1.. 1 : Drain : Drain : Gate 4 : Source : Drain 6 : Drain CPH6 CPH6444-TL-W Ordering & Package Information Device Package Shipping memo CPH6444-TL-W Packing Type: TL TL CPH6 SC-4, SOT-6, SOT-4 Electrical Connection 1,,, 6, pcs./reel Marking ZW LOT No. Pb-Free and Halogen Free 4 Semiconductor Components Industries, LLC, 1 July, 1 1 TKIM TC-9/61 TKIM/9 MSIM/6188PE TIIM TC-141 No. A14-1/6

Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=V 6 V Zero-Gate Voltage Drain Current IDSS VDS=6V, VGS=V 1 μa Gate to Source Leakage Current IGSS VGS=±16V, VDS=V ± μa Cutoff Voltage VGS(off) VDS=V, ID=1mA 1..6 V Forward Transfer Admittance yfs VDS=V, ID=A 1.8 S RDS(on)1 ID=A, VGS=V 6 8 mω Static Drain to Source On-State Resistance RDS(on) ID=1A, VGS=4.V 4 4 mω RDS(on) ID=1A, VGS=4V 81 114 mω Input Capacitance Ciss pf Output Capacitance Coss VDS=V, f=1mhz pf Reverse Transfer Capacitance Crss pf Turn-ON Delay Time td(on). ns Rise Time tr 9.8 ns See specified Test Circuit. Turn-OFF Delay Time td(off) 4 ns Fall Time tf 4 ns Total Gate Charge Qg nc Gate to Source Charge Qgs VDS=V, VGS=V, ID=4.A 1.6 nc Gate to Drain Miller Charge Qgd.1 nc Diode Forward Voltage VSD IS=4.A, VGS=V.8 1. V Switching Time Test Circuit V V VIN PW=μs D.C. 1% VIN G VDD=V D ID=A RL=1Ω VOUT P.G Ω S CPH6444 No. A14-/6

Static Drain to Source On-State Resistance, R DS (on) -- mω Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S 4. 4..... 1.. 16 14 1 9 8 6 4.1.1 V.V.1 I D =1A.V 4.V 4.V ID -- VDS.V.V VGS=.V...4..6..8.9 Drain to Source Voltage, V DS -- V IT189 RDS(on) -- VGS Ta= C A 4 6 8 1 14 16 IT191 Gate to Source Voltage, V GS -- V yfs -- ID V DS =V Ta= -- C C.1 IT19 SW Time -- ID td(off) t f t d (on) tr C V DD =V V GS =V Static Drain to Source On-State Resistance, R DS (on) -- mω Source Current, I S -- A Ciss, Coss, Crss -- pf 6. VDS=V.. 4. 4..... 1.. ID -- VGS C Ta= C. 1..... 4. Gate to Source Voltage, V GS -- V IT19 RDS(on) -- Ta 16 14 1 9 8 6 4 --6.1 -- C --4 -- 4 6 8 14 16 Ambient Temperature, Ta -- C IS -- VSD Ta= C VGS=4.V, ID=1A V GS =4.V, I D =1A C VGS=.V, ID =A -- C V GS =V.1..4.6.8 1. Diode Forward Voltage, V SD -- V IT194 Ciss, Coss, Crss -- VDS f=1mhz Ciss Coss Crss IT19.1 4 6 IT19 Drain to Source Voltage, V DS -- V IT196 No. A14-/6

Gate to Source Voltage, V GS -- V Allowable Power Dissipation, P D -- W 9 8 6 4 1 V DS =V I D =4.A VGS -- Qg 1 4 6 8 9 Total Gate Charge, Qg -- nc IT19 1.8 PD -- Ta When mounted on ceramic substrate 1.6 (9mm.8mm) 1.4 1..8.6.4. 4 6 8 14 16 Ambient Temperature, Ta -- C IT188 I DP =18A(PW μs) I D =4.A Operation in this area is limited by R DS (on). A S O ms ms 1ms DC operation (Ta= C) μs.1 Ta= C Single pulse.1 When mounted on ceramic substrate (9mm.8mm).1 Drain to Source Voltage, V DS -- V IT198 No. A14-4/6

Outline Drawing CPH6444-TL-W Land Pattern Example Mass (g) Unit.1 * For reference mm Unit: mm.6.4 1.4.9.9 No. A14-/6

Note on usage : Since the CPH6444 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A14-6/6