SGT19N6SJ /SGF19N6SJ/SGW19N6SJ 6V, 2.5A,.19Ω Features RDS(on) =.19Ω (Max.)@ VGS = 1V, ID = 1A Ultra low gate charge ( Typ. Qg = 37nC) Low effective output capacitance 1% avalanche tested RoHS compliant Description The WinMOS MOSFET, SG s 1 st generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, WinMOS provides world class Rsp, superior switching performance and ruggedness. This WinMOS fits the industry s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Maximum Ratings Parameter Symbol Conditions Value Unit Tc=25 2.5 Continuous drain current Id Tc=1 13 A Pulsed drain current I d,pulse Tc=25 56 Avalanche energy, single pulse Eas Id=6A, VDD=5V 71 mj Avalanche energy, repetitive Ear Id=2A, VDD=5V 1 mj Avalanche current Iar 2 A MOSFET dv /dt ruggedness dv/dt VDS=48V,ID=1A, Tj=125 15.6 V/ns Gate source voltage Vgs static ±2 V AC (f >1 Hz) ±3 V Power dissipation for TO-22FB-3L Ptot Tc=25 22 W Power dissipation for TO-247 Ptot Tc=25 22 W Operating and storage temperature Tj,Tstg -55~15 Thermal Characteristics Parameter Symbol SGT19N6SJ/ SGF19N6DJ/SGW19N6SJ Unit Junction to case RthJC 1.2 /W Junction to ambient RthJA 6.5 /W Soldering temperature, wavesoldering only allowed at leads Tsold 28 SGX19N6SJ Rev. 1.2 2/11
Electrical Characteristics at Tj=25 Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown voltage V(BR)Dss Vgs=V,ID=25uA 6 --- --- V Gate threshold voltage Vgs(th) Id=25uA,Vds=Vgs 2 3 4 V Zero gate voltage drain current IDSS VDS=6V, Vgs=V Tj=25 VDS=6V, Vgs=V Tj=15 --- ---.5 --- --- 1 ua Gate source leakage current Igss Vgs=3V,Vds=V --- --- 1 na Drain source on-state resistance R DS(on) Vgs=1V, ID=1A Tj=25 Vgs=1V, ID=1A Tj=15 ---.17.19 ---.45 --- Ω Gate resistance Rg f=1 MHz, open drain --- 3.5 --- Ω Dynamic / Switching Characteristics Parameter Symbol Conditions Min Typ Max Unit input capacitance Ciss --- 22 --- Output capacitance Coss Vds=1V Vgs=V --- 98 --- f=1mhz Reverse transfer capacitance Crss --- 25 --- pf Turn on delay time Td(on) --- 9 --- rise time Tr Vdd=4V, Vgs=/1V --- 5 --- Id=2.5A Turn off delay time Td(off) Rg=3.5ohm --- 45 --- ns Fall time Tf --- 4.5 --- Gate to source charge Qgs --- 4.7 --- Gate to drain charge Qgd Vdd=4V,Id=2.5A --- 16 --- Gate charge total Qg Vgs= to 1V --- 37 --- nc Gate plateau voltage V plateau --- 5.1 --- V SGX19N6SJ Rev. 1.2 3/11
Drain-Source Diode Characteristics Parameter Symbol Conditions Min Typ Max Unit Maximum Continuous Drain to Source Diode Forward current Isd Tc=25 --- --- 2.5 A Maximum Pulsed Drain to Source Diode Forward current ISDM Tc=25 --- --- 56 A Drain to Source Diode Forward Voltage VSD VGS=V, ISD=2.5A, TJ =25 C --- --- 1.3 V Reverse Recovery Time Reverse Recovery Charge Peak reverse recovery current Trr --- 472 --- ns VDD=6V,VGS=V, Qrr ISD=21A dif/dt = 1A/μs --- 1.2 --- μc TJ =25 C I rrm --- 3 --- A SGX19N6SJ Rev. 1.2 4/11
Typical Performance Characteristics 1 Safe operating area I D=f(V DS); T C=25 C; D = parameter: t 2 Typ. output characteristics 3 Typ. drain-source on-state resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=15 C parameter: V GS parameter: V GS ID (A) 45 4 35 3 25 2 2V 12V 1V 8V 6V 5.5V 5V 4.5V RDSON(Ω) 1.6 1.2.8 4.5V 5V 5.5V 6V 6.5V 7V 7.5V 1V 2V 15 1.4 5 1 2 3 4 5 6 7 8 9 1 11 12 13 14 15 16 17 18 19 2 VDS (V) 5 1 15 2 25 3 35 4 ID(A) SGX19N6SJ Rev. 1.2 5/11
4 Drain-source on-state resistance 5 Typ. transfer characteristics R DS(on)=f(T j); I D=1 A; V GS=1 V I D=f(V GS); V DS >2 I D R DS(on)max parameter: T j RDSON(Ω ) 1.8.6.4.2 ID (A) 45 4 35 3 25 2 15 1 25 5 75 1 125 15 tc( ) 5 2 4 6 8 1 VGS (V) 6 Typ. gate charge 7 Forward characteristics of reverse diode V GS=f(Qgate); I D=5.5 A pulsed I D=f(V SD) parameter: V DD parameter: T j 1 24V 48V 3 2.5 25 15 VGS (V) 5 VSD(V) 2 1.5 1 1 2 3 4 QG (nc).5 5 1 15 2 25 3 35 4 45 5 ID (A) SGX19N6SJ Rev. 1.2 6/11
8 Drain-source breakdown voltage 9 Typ. capacitances V BR(DSS)=f(T j); I D=.25 ma C =f(v DS); V GS= V; f =1 KHz BVDSS (norm ) 1.2 1.1 1.9 Capacltance (pf) 1 9 8 7 6 5 4 3 2 Crss Cos s Ci ss.8 25 5 75 1 125 15 TJ ( ) 1 1 2 3 4 5 6 VDS (V) SGX19N6SJ Rev. 1.2 7/11
Mechanical Dimensions TO-22-F-3L SGX19N6SJ Rev. 1.2 8/11
Mechanical Dimensions TO-22-FB-3L SGX19N6SJ Rev. 1.2 9/11
Mechanical Dimensions TO-247 SYMPOL mm mm mm SYMPOL SYMPOL MIN NOM MAX MIN NOM MAX MIN NOM MAX A 4.9 5. 5.1 E 15.7 15.8 15.9 ΦP2 2.4 2.5 2.6 A1 2.31 2.41 2.51 E1 13.1 13.3 13.5 Q 5.6 5.8 6. A2 1.9 2. 2.1 E2 4.9 5. 5.1 S 6.15BSC b 1.16 1.21 1.26 E3 2.4 2.5 2.6 T 9.8 1.2 b2 1.96 2.1 2.6 e 5.44BSC U 6. 6.4 b4 2.96 3.1 3.6 h.5.2 θ1 6 7 8 c.59.61.66 L 19.8 19.92 2.1 θ2 4 5 6 D 2.9 21. 21.1 L1 4.3 θ3 1 1.5 D1 16.25 16.55 16.85 ΦP 3.5 3.6 3.7 θ4 14 15 16 D2 1.5 1.2 1.35 ΦP1 7.3 SGX19N6SJ Rev. 1.2 1/11
Revision History Version Update date Revised Content Revised by Confirmed by V1. 212-8-29 Original ZhangFeng Alan V1.1 212-12-13 Modify the value of EAS ZhangFeng Alan V1.2 213-1-11 Add TO-22F-3L Package ZhangFeng Alan SGX19N6SJ Rev. 1.2 11/11