INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop.4vtyp. @ A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. Very Tight Vce(on) distribution IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-22AB package Benefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET's conduction and Diode losses Absolute Maximum Ratings IRG4BC2SD Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 9 I C @ T C = C Continuous Collector Current I CM Pulsed Collector Current 38 A I LM Clamped Inductive Load Current 38 I F @ T C = C Diode Continuous Forward Current 7. I FM Diode Maximum Forward Current 38 V GE Gate-to-Emitter Voltage ± 2 V P D @ T C = 25 C Maximum Power Dissipation 6 P D @ T C = C Maximum Power Dissipation 24 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT 2. R θjc Junction-to-Case - Diode 3.5 C/W R θcs Case-to-Sink, flat, greased surface.5 R θja Junction-to-Ambient, typical socket mount 8 Wt Weight 2 (.7) g (oz) www.irf.com G C E n-channel PD- 9793 Standard Speed IGBT TO-22AB V CES = 6V V CE(on) typ. =.4V @V GE = 5V, I C = A 9/23/98
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 6 V V GE = V, I C = 25µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.75 V/ C V GE = V, I C =.ma V CE(on) Collector-to-Emitter Saturation Voltage.4.6 I C = A V GE = 5V.85 V I C = 9A See Fig. 2, 5.44 I C = A, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, I C = 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 25µA g fe Forward Transconductance 2. 5.8 S V CE = V, I C = A I CES Zero Gate Voltage Collector Current 25 µa V GE = V, V CE = 6V 7 V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop.4.7 V I C = 8.A See Fig. 3.3.6 I C = 8.A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 27 4 I C = A Qge Gate - Emitter Charge (turn-on) 4.3 6.5 nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) 5 V GE = 5V t d(on) Turn-On Delay Time 62 T J = 25 C t r Rise Time 32 ns I C = A, V CC = 48V t d(off) Turn-Off Delay Time 69 4 V GE = 5V, R G = 5Ω t f Fall Time 48 73 Energy losses include "tail" and E on Turn-On Switching Loss.32 diode reverse recovery. E off Turn-Off Switching Loss 2.58 mj See Fig. 9,,,8 E ts Total Switching Loss 2.9 4.5 t d(on) Turn-On Delay Time 64 T J = 5 C, See Fig.,, 8 t r Rise Time 35 ns I C = A, V CC = 48V t d(off) Turn-Off Delay Time 98 V GE = 5V, R G = 5Ω t f Fall Time 8 Energy losses include "tail" and E ts Total Switching Loss 4.33 mj diode reverse recovery. L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 55 V GE = V C oes Output Capacitance 39 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 7. ƒ =.MHz t rr Diode Reverse Recovery Time 37 55 ns T J = 25 C See Fig. 55 9 T J = 25 C 4 I F = 8.A I rr Diode Peak Reverse Recovery Current 3.5 5. A T J = 25 C See Fig. 4.5 8. T J = 25 C 5 V R = 2V Q rr Diode Reverse Recovery Charge 65 38 nc T J = 25 C See Fig. 24 36 T J = 25 C 6 di/dt = 2Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 24 A/µs T J = 25 C See Fig. During t b 2 T J = 25 C 7 2 www.irf.com
6 LOAD CURRENT (A) 2 8 4 Square wave: 6% of rated voltage I For both: Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 3 W Ideal diodes. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector Current (A) T J = 5 C T J = 25 C V GE = 5V 2µs PULSE WIDTH.. 2. 3. 4. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 5 o J C T = 25 o J C V CC = 5V 5µs PULSE WIDTH 5 6 7 8 9 2 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 2 5 5 V CE, Collector-to-Emitter Voltage(V) 3. 2. V GE = 5V 8 us PULSE WIDTH I C = I C = 2 A A I C = 5. 5 A 25 5 75 25 5 T C, Case Temperature ( C). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ).5.2..5 PDM..2 t. SINGLE PULSE (THERMAL RESPONSE) t2 Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC...... t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 8 6 4 2 VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V CC = 4V I C = A V CE, Collector-to-Emitter Voltage (V) 5 5 2 25 3 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 3. 2.9 2.8 V CC = 48V V GE = 5V T = 25 J C I C = A Total Switching Losses (mj) R G = 5Ω V GE = 5V V CC = 48V I C = I C = I C = 2 A A 5 A 2.7 2 3 4 5 R GR, Gate Resistance G, Gate Resistance (Ω). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 4 R G = 5Ω T J = 5 C 2 V CC = 48V V GE = 5V 8 6 4 2 4 8 2 6 2 I C, Collector Current (A) I C, Collector-to-Emitter Current (A) V GE = 2V T = 25 o J C SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 5 C T J = 25 C T J = 25 C..4.8.2.6 2. 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
8 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C I F = 6A t rr - (ns) 6 4 I F = 8.A I IRRM - (A) I F = 8.A I F = 6A 2 I F = 4.A I = 4.A F di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 5 4 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C Q RR - (nc) 3 2 I F = 6A I F = 8.A di(rec)m /dt - (A/µs) I F = 4.A I F = 8.A I F = 6A I = 4.A F di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. 8% of Vce 43µF D.U.T. V ge % 9% VC 9% t d(off) Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f I C 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = Vce Ic dt t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY W AVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 48V R L = 48V 2 X I C @25 C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit www.irf.com 9
Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 5Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. Case Outline TO-22AB 2.87 (.3) 2.62 (.3) 5.24 (.6) 4.84 (.584) 4.9 (.555) 3.47 (.53).54 (.45).29 (.45) 4 2 3 3.78 (.49) 3.54 (.39) - A - 6.47 (.255) 6. (.24).5 (.45) MIN 3 X 4.6 (.6) 3.55 (.4) 3.96 (.6) 3.55 (.4) 4.69 (.85) 4.2 (.65) - B -.32 (.52).22 (.48) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 DIM ENSIONS ARE SHO W N M ILLIM ETER S (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-22AB. LEAD ASSIGNMENTS - GATE 2 - COLLE CTO R 3 - EM ITTER 4 - COLLE CTO R.4 (.55) 3 X.5 (.45) 2.54 (.) 2X.93 (.37) 3 X.69 (.27).36 (.4) M B A M.55 (.22) 3 X.46 (.8) 2.92 (.5) 2.64 (.4) CONFORMS TO JEDEC OUTLINE TO-22AB D im ens ions in M illim eters and (Inc hes) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, Tel: (3) 322 333 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 883 7322 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (95) 453 22 IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: ++ 49 672 9659 IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 39 45 IR FAR EAST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 3 3983 86 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 838 463 IR TAIWAN:6 Fl. Suite D. 27, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/