GENERAL DESCRIPTION The SGM4461 is a high-speed, low-voltage, advanced dual-independent double-pole/double-throw (DPDT) CMOS analog switch that is designed to operate from a single +1.8V to +5.5V power supply. It features high-bandwidth (3MHz) and low on-resistance (4Ω TYP), targeted applications for audio switching. The SGM4461 is configured as a dual double-pole /double-throw (DPDT) device with two logic control inputs that control two multiplexer/demultiplexers each. The configuration can also be used as a dual differential 2-to-1 multiplexer/ demultiplexer. FEATURES Low Voltage Operation: 1.8V to 5.5V Low On-Resistance: 4Ω (TYP) Low On-Resistance Flatness -3dB Bandwidth: 3MHz Rail-to-Rail Input and Output Operation High Off-Isolation: -75dB at 1MHz Low Crosstalk: -1dB at 1MHz Typical Power Consumption (<.1µW) TTL/CMOS Compatible Lead (Pb) Free TQFN-16 (2.6mm 1.8mm) Package Extended Industrial Temperature Range: -4 to +85 SGM4461 is available in Pb-free TQFN-16 (2.6mm 1.8mm) package. BLOCK DIAGRAM APPLICATIONS Communication Systems Cell Phones Portable Instrumentation Audio Signal Routing Audio and Video Switching PCMCIA Cards Computer Peripherals Modems PDAs 1 1-2 2 3 3-4 4 NC1 NO1 NC2 NO2 NC3 NO3 NC4 NO4 REV. A. 1
ORDERG FORMATION MODEL SGM4461 P- PACKAGE TQFN-16 (2.6mm 1.8mm) SPECIFIED TEMPERATURE RANGE ORDERG NUMBER PACKAGE MARKG PACKAGE OPTION -4 to +85 SGM4461YTQA16/TR 4461 Tape and Reel, 3 P CONFIGURATION (TOP VIEW) NC4 NO1 1 SGM4461YTQA16 4 NO4 3-4 NC3 13 12 11 1 9 8 3 14 7 NO3 15 6 16 5 NC2 1 2 3 4 NC1 1-2 NO2 2 TQFN-16 (2.6mm 1.8mm) FUNCTION TABLE 1-2 Function NC1 and NC2 NO1 and NO2 ON OFF 1 OFF ON 3-4 Function NC3 and NC4 NO3 and NO4 ON OFF 1 OFF ON ABSOLUTE MAXIMUM RATGS to...v to 6V Analog, Digital voltage range... -.3V to ( ) +.3V Continuous Current NO, NC, or...±1ma Operating Temperature Range...-4 to +85 Junction Temperature...15 Storage Temperature... -65 to +15 Lead Temperature (soldering, 1s)...26 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. P DESCRIPTION NAME TQFN P FUNCTION 14 Power supply 6 Ground X 2,1 Digital control pin to connect the terminal to the NO or NC terminals X 16,4, 8, 12 Common terminal NO X 15,3, 7, 11 Normally-open terminal NC X 1, 5, 9, 13 Normally-closed terminal Note: NO X, NC X and X terminals may be an input or output. 2
ELECTRICAL CHARACTERISTICS ( = +4.5V to +5.5V, = V, V IH = +1.6V, V IL = +.5V, T A = -4 to +85. Typical values are at = +5.V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V -4 to +85 V On-Resistance R ON = 4.5V, V, +25 4 6 Ω I = -1mA, Test Circuit 1-4 to +85 7 Ω On-Resistance Match Between Channels R ON = 4.5V, V, +25.4 2.5 Ω I = -1mA, Test Circuit 1-4 to +85 3 Ω On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITAL PUTS R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) = 4.5V, V, +25 2 3 Ω I = -1mA, Test Circuit 1-4 to +85 3.5 Ω =5.5V, = 3.3V/.3V, V =.3V/ 3.3V -4 to +85 1 µa = 5.5V, V =.3V/ 3.3V, =.3V/ 3.3V, or floating -4 to +85 1 µa Input High Voltage V H -4 to +85 1.6 V Input Low Voltage V L -4 to +85.5 V Input Leakage Current I = 5.5V, V = V or 5.5V -4 to +85 1 µa DYNAMIC CHARACTERISTICS Turn-On Time t ON V NC or V NO = 3.V, = 3Ω, +25 36 ns Turn-Off Time = 35pF, Test Circuit2 +25 3 ns Break-Before-Make Time Delay Charge Injection Off Isolation Channel-to-Channel Crosstalk -3dB Bandwidth Channel ON Capacitance POWER REQUIREMENTS t OFF t D Q O ISO X TALK BW C NC(ON), C NO(ON), C (ON) V NC or V NO = 3.V, = 3Ω, = 35pF, Test Circuit4 V G =, R G = Ω, = 1.nF, Q = x, Test Circuit3 +25 16 ns +25 3.5 pc Signal = dbm, =, 1MHz +25-75 Test Circuit5 1MHz +25-55 Signal = dbm, =, 1MHz +25-1 Test Circuit6 1MHz +25-6 Signal = dbm, =, Test Circuit7 db db +25 3 MHz +25 43.2 pf Power Supply Range -4 to +85 1.8 5.5 V Power Supply Current I + = 5.5V, V = V or -4 to +85 1 µa Specifications subject to changes without notice. 3
ELECTRICAL CHARACTERISTICS ( = +2.7V to +3.6V, V IH = +1.6V, V IL = +.4V, T A = -4 to +85. Typical values are at = +3.V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V -4 to +85 V On-Resistance R ON = 2.7V, V, +25 1 15 Ω I = -1mA, Test Circuit 1-4 to +85 18 Ω On-Resistance Match Between Channels R ON = 2.7V, V, +25 1 3 Ω I = -1mA, Test Circuit 1-4 to +85 4 Ω On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITAL PUTS R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) = 2.7V, V, +25 6 9 Ω I = -1mA, Test Circuit 1-4 to +85 12 Ω = 3.6V, = 3.3V /.3V, V =.3V/ 3.3V = 3.6V, V =.3V/ 3.3V, =.3V/ 3.3V, or floating -4 to +85 1 µa -4 to +85 1 µa Input High Voltage V H -4 to +85 1.5 V Input Low Voltage V L -4 to +85.4 V Input Leakage Current I = 2.7V, V = V or2.7v -4 to +85 1 µa DYNAMIC CHARACTERISTICS Turn-On Time t ON V NC or V NO = 1.5V, = 3Ω, +25 45 ns Turn-Off Time = 35pF, Test Circuit2 +25 44 ns Break-Before-Make Time Delay Charge Injection Off Isolation t OFF t D Q O ISO V NC or V NO = 1.5V, = 3Ω, = 35pF, Test Circuit4 V G =, R G = Ω, = 1.nF, Q = x, Test Circuit3 +25 23 ns +25 2.6 pc Signal = dbm, =, 1MH +25-75 db Test Circuit5 1MHz +25-55 db Channel-to-Channel Crosstalk 3dB Bandwidth Channel ON Capacitance X TALK BW C NC(ON), C NO(ON), C (ON) Signal = dbm, =, 1MHz +25-1 db Test Circuit6 1MHz +25-6 db Signal = dbm, =, Test Circuit7 +25 3 MHz +25 43.2 pf Specifications subject to changes without notice. 4
SGM4461 TYPICAL PERFORMANCE CHARACTERISTICS On Response (db) 3-3 -6 On Response vs. Frequency V+ = +4.2V T A = +25 On Response (db) 3-3 -6 On Response vs. Frequency V+ = +3V T A = +25-9.1 1 1 1 1 Frequency (MHz) -9.1 1 1 1 1 Frequency (MHz) On Response (db) 2-2 -4-6 -8-1 -12-14 Response vs. Frequency OFF-ISOLATION CROSSTALK V+ = +4.2V T A = +25.1.1 1 1 1 1 Frequency (MHz) On Response (db) 2-2 -4-6 -8-1 -12-14 Response vs. Frequency OFF-ISOLATION CROSSTALK V+ = +3V T A = +25.1.1 1 1 1 1 Frequency (MHz) 5
TEST CIRCUITS 1mA V1 R ON = V1/1mA Test Circuit 1. On Resistance.1μF V 5% 5% RL 3Ω 35pF 9% 9% t ON t OFF Test Circuit 2. Switching Times (t ON, t OFF ).1μF R G Δ V G 1nF V ON OFF ON V Q = Δ V Test Circuit 3. Charge Injection 6
TEST CIRCUITS (Cont.).1μF NC NO V 5% 3Ω 35pF 9% t D Test Circuit 4. Break-Before-Make Time Delay (t D ).1µF NC NO Source Signal 5pF Test Circuit 5. Off Isolation.1μF Source Signal N.C. 5pF 1-2 5pF Channel To Channel Crosstalk = -2 log Test Circuit 6. Channel-to-Channel Crosstalk 7
TEST CIRCUITS (Cont.) 1nF Source Signal 5pF Test Circuit 7. -3dB Bandwidth 8
PACKAGE OUTLE DIMENSIONS TQFN-16 (2.6mm 1.8mm) 2.6±.5.4±.5 ( 15).4 TYP P #1 IDENTIFICATION CHAMFER.1 45 1.8±.5 1.2 Ref..5±.5 P #1 DOT BY MARKG TOP VIEW 2 1.2±.5 BOTTOM VIEW.75±.5.-.5.23 Ref. SIDE VIEW Note: All linear dimensions are in millimeters. 12/28 REV. A. 1 SGMICRO is dedicated to provide high quality and high performance analog IC products to customers. All SGMICRO products meet the highest industry standards with strict and comprehensive test and quality control systems to achieve world-class consistency and reliability. For information regarding SGMICRO Corporation and its products, see 9