PUSHING LITHOGRAPHY TO ENABLE ULTIMATE NANO-ELECTRONICS LUC VAN DEN HOVE President & CEO imec
OUTLINE! Industry drivers! Roadmap extension! Lithography options! Innovation through global collaboration imec 2010
Experience the world wherever you are Computer Communication Consumer Connected World Computer Always connected Virtual Social Networks (Facebook, LinkedIn, Twitter, You Tube...)
Experience the world wherever you are Video to dominate mobile data traffic Total mobile data traffic (Tetabyte per month) 2,000,000 1,500,000 1,000,000 500,000 Global mobile data traffic, by type 7% 0 2008 2009E 2010E 2011E 2012E 2013E Source: Morgan Stanley Data Ubiquitous Connectivity 10% P2P Video + Ultimate Graphics 19% 3D 64% Video Voice NVIDIA
Computing Communication Consumer
Computing Communication Consumer Lifestyle Healthcare
BUSY LIFESTYLE 1 billion overweight people 300 million of those are obese
AGING POPULATION 600 million persons 60+ Expected to double by 2025
RISE IN CHRONIC DISEASES 600 million people worldwide $500 billion a year (US) $685 billion by 2020 (US)
MEDICINE GOES DIGITAL PERSONALIZED - PREDICTIVE - PREVENTIVE
WEARABLE HEALTH AND COMFORT MONITORING internet doctor hospital Anywhere, anytime Connected health Health and lifestyle
WEARABLE HEALTH AND COMFORT MONITORING ECG NECKLACE FOR AMBULATORY APPLICATIONS
WEARABLE HEALTH AND COMFORT MONITORING
BOOSTING CHIP PERFORMANCE AND SYSTEM FUNCTIONALITY TERAFLOP TERABIT MORE FUNCTIONALITY
BOOSTING CHIP PERFORMANCE AND SYSTEM FUNCTIONALITY TERAFLOP TERABIT MORE FUNCTIONALITY
RELENTLESS SCALING 1965 2002-2003 ~ 90 nm Lithography Enabled Scaling STOP Geometric (Dennard s Law) Scale: tox, Lg, xj,...
RELENTLESS SCALING 1965 2002-2003 ~ 90 nm Lithography Enabled Scaling Geometric (Dennard s Law) Materials Enabled Scaling Scale: tox, Lg, xj,...
RELENTLESS SCALING 1965 2002-2003 ~ 90 nm Lithography Enabled Scaling Materials Enabled Scaling Metal gate High-k Intel High mobility SiGe channel
RELENTLESS SCALING 1965 2002-2003 ~ 90 nm ~ 15nm Lithography Enabled Scaling Materials Enabled Scaling Fin Fin poly-si Strained Si High-k Metal Gate Multi Gate FINFET
RELENTLESS SCALING 1965 2002-2003 ~ 90 nm ~ 15nm Lithography Enabled Scaling Materials Enabled Scaling
EXTREME HIGH MOBILITY CHANNELS
EXTREME HIGH MOBILITY CHANNELS
RELENTLESS SCALING Lithography Enabled Scaling Materials Enabled Scaling 3D Enabled Scaling From Plane to Cube
3D STACKED ICs CONNECTED THROUGH TSVs Top die 10um 10um 25um 25um 5um Top tier Bottom tier Bottom die Cu - Cu bonding
PERFORMANCE MOBILE SYSTEMS E.g., Netbooks Cost, Power, Form factor, Performance REUSE COMPUTE SYSTEMS E.g., Routers, Severs Performance, Power efficiency, heat dissipation, Reliability 3D Integration & advanced packaging CONSUMER E.g., micro-servers Power, Cost, Performance, Form factor,... MODULARITY HEALTHCARE E.g., sensor nodes Form-factor, power, bio-compatibility,reliability FORMFACTOR
3D STACKED ICs CONNECTED THROUGH TSVs Optical interconnects Photonics Multi-core logic Memory
NEW MEMORY CONCEPTS GdAlSiO x Si 3 N 4 BiCS (ref. Toshiba) Explore Marc Heyns!imec 2009
NEW MEMORY CONCEPTS GdAlSiO x Cross-bar memory Si 3 N 4 Explore Marc Heyns!imec 2009
LIKELY FLASH ROADMAP 2010 2011 2012 2013 2014 >2015 RRAM <1F 2 3D NAND 1F 2 GdAlSiO x 3 bit FG 4 bit FG 2F 2 2 bit FG
LIKELY DRAM ROADMAP 2010 2011 2012 2013 2014 >2015 RRAM 1x nm 4F 2 3x nm 2x nm 6F 2 6x nm 5x nm GdAlSiO x 4x nm 8F 2
RELENTLESS SCALING Lithography Enabled Scaling Materials Enabled Scaling 3D Enabled Scaling
DOUBLE PATTERNING Litho-Etch-Litho-Etch Spacer defined DP First exposure First exposure Etch Second exposure Spacer making Final CD < 10%CD Etch Final CD < 10% CD Etch 32nm Lines/32nm Spaces Surname + Name! IMEC restricted 2009 36
SOURCE MASK OPTIMIZATION 22NM SRAM PROCESS WINDOW WITH DOUBLE PATTERNING Freeform illumination Mask!56 nm defocus!48 nm defocus Best focus best dose +40 nm defocus +48 nm defocus Standard illumination Contact layer design split k 1 =0.384 Exposure Latitude (%)! 10! 8! MEEF = 3.0 6! 4! MEEF = 4.4 2! 0! 0 20 40 60 80 100 120 Depth of Focus (nm) Process window limiting feature Surname + Name! IMEC restricted 2009 37
28 nm 30 nm EUV LITHOGRAPHY
EUV TOOL OUTPUT 2500 2000 1500 2009 cumulative wafer output # good wafers 2500 2000 1500 2010 cumulative wafer output ~ 2200 1000 1000 500 500 0 1 6 11 16 21 26 31 36 41 46 51 Weeks 0 1 6 11 16 21 26 31 36 41 46 51 Weeks
22nm NODE SRAM PATTERNING WITH EUV 0.089 µm 2 0.406µm! 0.22µm! 40
IMEC PARTNER EXPOSURES
RESIST MATERIALS Sensitivity Resolution Acid Diffusion Length = Pixel Size Shot Noise Statistics = Photons/ Pixel Acid Diffusion Length Line Width Roughness Surname + Name! IMEC restricted 2009 42
RESIST MATERIALS 09-58 10.04 10-01 09-48 10-05 10-02 10-03 SEVR-59 09-45 09-46 Surname + Name! IMEC restricted 2009 43
EUV ROADMAP TOWARDS 10nm ADT NXE:3100 NXE:3300 imec 2010
ML2 LITHO DEVELOPMENT Meeting the 3 key targets (resolution, overlay, throughput) for direct write on Si is extremely challenging! Targets are rapidly moving according to Moore s law. Missing the targeted insertion node can have major impact on the ROI Focusing on mask writing as intermediate milestone! Reduces the risk: any throughput improvement is welcome Both 193nm and EUVL can use this LUC VAN DEN HOVE / IMEC 2010 45
OUTLINE! Industry drivers! Roadmap extension! Lithography options! Innovation through global collaboration imec 2010
BRINGING TOGETHER FULL ECO SYSTEM System Logic IDM Memory IDM Fabless Fablite Foundries EDA Material Suppliers Suppliers Equipment Suppliers SAT imec 2010
BRINGING TOGETHER FULL ECO SYSTEM System Logic IDM Memory IDM Fabless Fablite Foundries EDA Material Suppliers Suppliers Equipment Suppliers SAT imec 2010
CONCLUSIONS!Nano-electronics will continue to bring innovation into many converging application fields!concurrent scaling enabled by lithography materials innovations 3D!Momentum on EUV has increased tremendously during last year!global collaboration (including entire value chain) is required to address the huge R&D challenges LUC VAN DEN HOVE / IMEC 2010
ASPIRE INVENT ACHIEVE