IGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKW3N65EL5 6VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl
IKW3N65EL5 LowVCE(sat)seriesfifthgeneration LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode FeaturesandBenefits: C LowVCE(sat)L5technologyoffering VerylowcollectoremittersaturationvoltageVCEsat BestinClasstradeoffbetweenconductionandswitchinglosses 6Vbreakdownvoltage LowgatechargeQG Maximumjunctiontemperature75 C QualifiedaccordingtoJEDECfortargetapplications Pbfreeleadplating RoHScompliant CompleteproductspectrumandPSpicemodels: http://www.infineon.com/igbt/ G E Applications: Uninterruptiblepowersupplies Solarphotovoltaicinverters Weldingmachines G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package IKW3N65EL5 6V 3A.5V 75 C K3EEL5 PGTO2473 2 Rev.2.,242
IKW3N65EL5 LowVCE(sat)seriesfifthgeneration TableofContents Description........................................................................ 2 Table of Contents................................................................... 3 Maximum Ratings................................................................... 4 Thermal Resistance................................................................. 4 Electrical Characteristics.............................................................. 5 Electrical Characteristics Diagrams..................................................... 7 Package Drawing...................................................................4 Testing Conditions..................................................................5 Revision History....................................................................6 Disclaimer.........................................................................6 3 Rev.2.,242
IKW3N65EL5 LowVCE(sat)seriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC=25 Cvaluelimitedbybondwire TC= C IC 85. 62. Pulsedcollectorcurrent,tplimitedbyTvjmax ) ICpuls 2. A Turn off safe operating area VCE 6V,Tvj 75 C,tp=µs ) 2. A Diodeforwardcurrent,limitedbyTvjmax TC=25 Cvaluelimitedbybondwire TC= C IF. 4. Diodepulsedcurrent,tplimitedbyTvjmax ) IFpuls 2. A Gateemitter voltage TransientGateemittervoltage(tp µs,d<.) PowerdissipationTC=25 C PowerdissipationTC= C VGE Ptot ±2 ±3 227. 4. Operating junction temperature Tvj 4...+75 C Storage temperature Tstg 55...+ C Soldering temperature, 2) wave soldering.6mm (.63in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A A V W C M.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).66 K/W Rth(jc).95 K/W Rth(ja) 4 K/W ) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications. 4 Rev.2.,242
IKW3N65EL5 LowVCE(sat)seriesfifthgeneration ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=5.V,IC=3.A Tvj=25 C Tvj= C Tvj= C VGE=V,IF=3.A Tvj=25 C Tvj= C Tvj= C Gateemitter threshold voltage VGE(th) IC=.4mA,VCE=VGE 4.2 5. 5.8 V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=25 C Tvj= C Tvj=75 C.5.5.4.35.32.28 4. 2. Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=3.A 65. S.35.7 4. V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 46 Output capacitance Coes VCE=25V,VGE=V,f=MHz 64 Reverse transfer capacitance Cres 8 Gate charge Internal emitter inductance measured 5mm (.97 in.) from case QG VCC=52V,IC=3.A, VGE=5V pf 68. nc LE 3. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 33 ns Rise time VCC=4V,IC=3.A, tr ns VGE=./5.V, Turnoff delay time td(off) RG(on)=.Ω,RG(off)=.Ω, 38 ns Fall time Lσ=6nH,Cσ=3pF tf 5 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.47 mj Turnoff energy Eoff diode reverse recovery..35 mj Total switching energy Ets.82 mj 5 Rev.2.,242
IKW3N65EL5 LowVCE(sat)seriesfifthgeneration DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 87 ns Diode reverse recovery charge VR=4V, Qrr.9 µc IF=3.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 2. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 2 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj= C Turnon delay time td(on) Tvj= C, 3 ns Rise time VCC=4V,IC=3.A, tr 3 ns VGE=./5.V, Turnoff delay time td(off) RG(on)=.Ω,RG(off)=.Ω, 37 ns Fall time Lσ=6nH,Cσ=3pF tf ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.68 mj Turnoff energy Eoff diode reverse recovery. 2.8 mj Total switching energy Ets 2.86 mj DiodeCharacteristic,atTvj= C Diode reverse recovery time trr Tvj= C, ns Diode reverse recovery charge VR=4V, Qrr.9 µc IF=3.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 28. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 75 A/µs 6 Rev.2.,242
IKW3N65EL5 LowVCE(sat)seriesfifthgeneration 2 225 2 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 75 25 75 not for linear use. VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,TC=25 C,Tvj 75 C,VGE=5V,tp=µs, ICmaxdefinedbydesignnotsubjectto production test) 25 25 75 25 75 TC,CASETEMPERATURE[ C] Figure 2. Powerdissipationasafunctionofcase temperature (Tvj 75 C) 9 9 VGE = 2V 8 8 8V IC,COLLECTORCURRENT[A] 7 6 4 3 2 IC,COLLECTORCURRENT[A] 7 6 4 3 2 5V 2V V 8V 7V 6V 25 75 25 75 TC,CASETEMPERATURE[ C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE 5V,Tvj 75 C)..5..5 2. 2.5 3. VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=25 C) 7 Rev.2.,242
IKW3N65EL5 Low VCE(sat) series fifth generation 9 9 VGE = 2V 8 Tvj = 25 C Tvj = C 8 8V 5V 7 2V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 7 V 6 8V 7V 6V 4 5V 3 6 4 3 2 2..5..5 2. 2.5 3. 2 VCE, COLLECTOREMITTER VOLTAGE [V] 3 4 5 6 7 8 9 VGE, GATEEMITTER VOLTAGE [V] Figure 5. Typical output characteristic (Tvj=75 C) Figure 6. Typical transfer characteristic (VCE=2V) IC = 7.5A IC = 5A IC = 3A.2 td(off) tf td(on) tr. t, SWITCHING TIMES [ns] VCEsat, COLLECTOREMITTER SATURATION [V].3..9.8.7.6.5 25 75 25 75 Tvj, JUNCTION TEMPERATURE [ C] 2 3 4 6 7 8 9 IC, COLLECTOR CURRENT [A] Figure 7. Typical collectoremitter saturation voltage as Figure 8. Typical switching times as a function of a function of junction temperature collector current (VGE=5V) (inductive load, Tvj= C, VCE=4V, VGE=/5V, RG(on)=Ω, RG(off)=Ω, dynamic test circuit in Figure E) 8 Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] td(off) tf td(on) tr 2 3 4 6 7 25 RG, GATE RESISTANCE [Ω] Figure 9. Typical switching times as a function of gate resistance (inductive load, Tvj= C, VCE=4V, VGE=/5V, IC=3A, dynamic test circuit in Figure E) 75 25 75 Figure. Typical switching times as a function of junction temperature (inductive load, VCE=4V, VGE=/5V, IC=3A, RG(on)=Ω, RG(off)=Ω, dynamic test circuit in Figure E) 7 8 typ. min. max. Eoff Eon Ets 7 6 E, SWITCHING ENERGY LOSSES [mj] VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] 5 4 3 2 6 5 4 3 2 25 75 25 75 Tvj, JUNCTION TEMPERATURE [ C] 2 3 4 6 7 8 9 IC, COLLECTOR CURRENT [A] Figure. Gateemitter threshold voltage as a function of junction temperature (IC=.4mA) 9 Figure 2. Typical switching energy losses as a function of collector current (inductive load, Tvj= C, VCE=4V, VGE=/5V, RG(on)=Ω, RG(off)=Ω, dynamic test circuit in Figure E) Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation 3.6 3.2 Eoff Eon Ets 2.8 E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 3.2 2.8 2.4 2..6.2.8 2.4 2..6.2.8.4.4. Eoff Eon Ets 2 3 4 6. 7 25 RG, GATE RESISTANCE [Ω] Figure 3. Typical switching energy losses as a function of gate resistance (inductive load, Tvj= C, VCE=4V, VGE=/5V, IC=3A, dynamic test circuit in Figure E) 25 75 VCC = 3V VCC = 52V 4 VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [mj] 6 Eoff Eon Ets 2.8 2.4 2..6.2.8 2 8 6 4 2.4. 2 75 Figure 4. Typical switching energy losses as a function of junction temperature (inductive load, VCE=4V, VGE=/5V, IC=3A, RG(on)=Ω, RG(off)=Ω, dynamic test circuit in Figure E) 3.6 3.2 Tvj, JUNCTION TEMPERATURE [ C] 2 3 3 4 4 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 5. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj= C, VGE=/5V, IC=3A, RG(on)=Ω, RG(off)=Ω, dynamic test circuit in Figure E) 3 6 9 2 8 QG, GATE CHARGE [nc] Figure 6. Typical gate charge (IC=3A) Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation C, CAPACITANCE [pf] E+4 Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] Cies Coes Cres 5 5 2 25 D =.5.2.5.2. single pulse. i: 2 3 4 5 6 ri[k/w]:.7.56.7294.297.274 2.2E3 τi[s]: 2.E5 2.2E4 2.E3.47.9256.8272. E6 3.. E5 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 7. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz)... Figure 8. IGBT transient thermal impedance (D=tp/T) 4 Tvj = 25 C, IF = 3A Tvj = C, IF = 3A 3 trr, REVERSE RECOVERY TIME [ns] Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] E4 tp, PULSE WIDTH [s] D =.5.2...5.2. single pulse. 2 9 8 7 6 4 i: 2 3 4 5 6 ri[k/w]:.3494.22947.29265.36688.3663 2.3E3 τi[s]: 2.5E5 2.E4.7E3.3.882.8337. E6 E5 E4... 3 tp, PULSE WIDTH [s] 2 2 3 3 4 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 9. Diode transient thermal impedance as a function of pulse width (D=tp/T) Figure 2. Typical reverse recovery time as a function of diode current slope (VR=4V) Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation 2.25 Tvj = 25 C, IF = 3A Tvj = C, IF = 3A Irr, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] 2..75..25..75..25 Tvj = 25 C, IF = 3A Tvj = C, IF = 3A 45 4 35 3 25 2 5 5 2 2 3 3 4 2 2 3 3 dif/dt, DIODE CURRENT SLOPE [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery charge as a function of diode current slope (VR=4V) Figure 22. Typical reverse recovery current as a function of diode current slope (VR=4V) 9 Tvj = 25 C Tvj = 75 C 8 7 7 IF, FORWARD CURRENT [A] dirr/dt, DIODE PEAK RATE OF FALL OF Irr [A/µs] Tvj = 25 C, IF = 3A Tvj = C, IF = 3A 2 7 6 4 3 2 2 22 4 2 2 3 3 4 dif/dt, DIODE CURRENT SLOPE [A/µs]..5..5 2. 2.5 VF, FORWARD VOLTAGE [V] Figure 23. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) Figure 24. Typical diode forward current as a function of forward voltage 2 Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation.6 IF = 7.5A IF = 5A IF = 3A.5 VF, FORWARD VOLTAGE [V].4.3.2...9.8.7.6 25 75 25 75 Tvj, JUNCTION TEMPERATURE [ C] Figure 25. Typical diode forward voltage as a function of junction temperature 3 Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation PGTO2473 4 Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 5 Rev. 2., 242
IKW3N65EL5 Low VCE(sat) series fifth generation Revision History IKW3N65EL5 Revision: 242, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 242 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 8726 Munich, Germany 8726 München, Germany 24 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 Rev. 2., 242