INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V GE = 5V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G previous generation IGBT co-packaged with HEXFRED TM ultrafast, E ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations Industry standard D 2 Pak package Benefits Latest generation 4 IGBTs offer highest power density motor controls possible. HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses. This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products. For hints see design tip 97003. Absolute Maximum Ratings IRG4BC20KD-S 2 D Pak PD -9598A Short Circuit Rated UltraFast IGBT V CES = 600V V CE(on) typ. = 2.27V @V GE = 5V, I C = 9.0A Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I C @ T C = 25 C Continuous Collector Current 6 I C @ T C = C Continuous Collector Current 9.0 I CM Pulsed Collector Current 32 A I LM Clamped Inductive Load Current 32 I F @ T C = C Diode Continuous Forward Current 7.0 I FM Diode Maximum Forward Current 32 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 20 V P D @ T C = 25 C Maximum Power Dissipation 60 P D @ T C = C Maximum Power Dissipation 24 W T J Operating Junction and -55 to +50 T STG Storage Temperature Range C Soldering Temperature, for sec. 300 (0.063 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case - IGBT 2. R θjc Junction-to-Case - Diode 2.5 R θcs Case-to-Sink, Flat, Greased Surface 0.5 C/W R θja Junction-to-Ambient ( PCB Mounted,steady-state) 40 Wt Weight.44 g www.irf.com 4/24/2000
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 V V GE = 0V, I C = 250µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.49 V/ C V GE = 0V, I C =.0mA V CE(on) Collector-to-Emitter Saturation Voltage 2.27 2.8 I C = 9.0A V GE = 5V 3.0 V I C = 6A See Fig. 2, 5 2.43 I C = 9.0A, T J = 50 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance 2.9 4.3 S V CE = V, I C = 9.0A I CES Zero Gate Voltage Collector Current 250 µa V GE = 0V, V CE = 600V 0 V GE = 0V, V CE = 600V, T J = 50 C V FM Diode Forward Voltage Drop.4.7 V I C = 8.0A See Fig. 3.3.6 I C = 8.0A, T J = 50 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 34 5 I C = 9.0A Q ge Gate - Emitter Charge (turn-on) 4.9 7.4 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 4 2 V GE = 5V t d(on) Turn-On Delay Time 54 t r Rise Time 34 T J = 25 C ns t d(off) Turn-Off Delay Time 80 270 I C = 9.0A, V CC = 480V t f Fall Time 72 V GE = 5V, R G = 50Ω E on Turn-On Switching Loss 0.34 Energy losses include "tail" E off Turn-Off Switching Loss 0.30 mj and diode reverse recovery E ts Total Switching Loss 0.64 0.96 See Fig. 9,,4 t sc Short Circuit Withstand Time µs V CC = 360V, T J = 25 C V GE = 5V, R G = 50Ω, V CPK < 500V t d(on) Turn-On Delay Time 5 T J = 50 C, See Fig.,4 t r Rise Time 37 I C = 9.0A, V CC = 480V ns t d(off) Turn-Off Delay Time 220 V GE = 5V, R G = 50Ω t f Fall Time 60 Energy losses include "tail" E ts Total Switching Loss 0.85 mj and diode reverse recovery L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 450 V GE = 0V C oes Output Capacitance 6 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 4 ƒ =.0MHz t rr Diode Reverse Recovery Time 37 55 ns T J = 25 C See Fig. 55 90 T J = 25 C 4 I F = 8.0A I rr Diode Peak Reverse Recovery Current 3.5 5.0 A T J = 25 C See Fig. 4.5 8.0 T J = 25 C 5 V R = 200V Q rr Diode Reverse Recovery Charge 65 38 nc T J = 25 C See Fig. 24 360 T J = 25 C 6 di/dt = 200Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 240 A/µs T J = 25 C See Fig. During t b 2 T J = 25 C 7 2 www.irf.com
2.5 LOAD CURRENT (A) 2.0.5.0 Square wave: 60% of rated voltage I For both: Duty cycle: 50% T J = 25 C T sink = 90 C 55 C Gate drive as specified Power Dissipation =.8W 0.5 Ideal diodes 0.0 0. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T = 25 o J C T = 50 o J C V GE = 5V 20µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 50 o J C T = 25 o J C V CC = 50V 5µs PULSE WIDTH 5 5 20 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 20 5 5 V CE, Collector-to-Emitter Voltage(V) 5.0 4.0 3.0 2.0 V GE = 5V 80 us PULSE WIDTH I C = 8 A I C = 9.0A 9 A I C = 4.5 A 0 25 50 75 25 50 T C, Case Temperature ( C).0-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 800 600 400 200 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V CC = 400V I C = 9.0A C res 0 V CE, Collector-to-Emitter Voltage (V) 0 0 20 30 40 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 0.8 0.7 0.6 V CC = 480V V GE = 5V T = 25 J C I C = 9.0A Total Switching Losses (mj) R G 50Ω = Ohm V GE = 5V V CC = 480V I C = 8A I C = 9.0A 9A I C = 4.5A 0.5 0 20 30 40 50 R G, Gate Resistance ( Ω (Ohm) ) 0. -60-40 -20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 3.0 2.0.0 R G = 50Ω Ohm T J = 50 C V CC = 480V V GE = 5V 0.0 0 4 8 2 6 20 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) V GE = 20V o T J = 25 C SAFE OPERATING AREA 0 V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 50 C T J = 25 C T J = 25 C 0. 0.4 0.8.2.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
80 V R = 200V T J = 25 C T J = 25 C V R = 200V T J = 25 C T J = 25 C I F = 6A t rr - (ns) 60 40 I F = 8.0A I IRRM - (A) I F = 8.0A I F = 6A 20 I F = 4.0A I = 4.0A F 0 0 di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt 0 di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 500 00 400 V R = 200V T J = 25 C T J = 25 C V R = 200V T J = 25 C T J = 25 C Q RR - (nc) 300 200 I F = 6A I F = 8.0A di(rec)m/dt - (A/µs) 0 I F = 4.0A I F = 8.0A I F = 6A I = 4.0A F 0 0 di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt 0 di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. +Vge 90% Vge Vce 80% of Vce 430µF D.U.T. Ic % Vce Ic 90% Ic 5% Ic td(off) tf Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µ S Eoff = Vce ic Ic dt dt t t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx Vcc % Ic td(on) t Vce tr 90% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = Vce Ic dt t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY W AVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST IRG4BC20KD-S CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t0 t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit 50V 6000µF V 0V L V * c D.U.T. 0-480V R L = 480V 4 X I C @25 C Figure 9. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Tape & Reel Information D 2 Pak TR R.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) 0.368 (.045) 0.342 (.035) FEED DIRECTION.85 (.0 73).65 (.0 65).60 (.457).40 (.449) 5.42 (.609) 5.22 (.60) 24.30 (.957) 23.90 (.94) TRL.90 (.429).70 (.42).75 (.069).25 (.049) 6. (.634) 5.90 (.626) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) 27.40 (.079) 23.90 (.94) 4 330.00 ( 4.73) MAX. 60.00 (2.362) M IN. NOTES :. CO MFORMS TO EIA-48. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (.039) 24.40 (.96) 3 30.40 (.97) MA X. 4 www.irf.com 9
Notes: Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=µH, R G = 50Ω (figure 9) ƒ Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. When mounted on " square PCB (FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. D 2 Pak Package Outline.40 (.055) M A X..54 (.45).29 (.405) - A - 2 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048).6 (.400) REF. 6.47 (.255) 6.8 (.243).78 (.070).27 (.050) 3 5.49 (.6) 4.73 (.580) 2.79 (.) 2.29 (.090) 5.28 (.2 08 ) 4.78 (. 88 ) 2.6 (.3) 2.32 (.09) 3X.40 (.055).4 (.045) 5.08 (.200) 3X 0.93 (.0 37) 0.69 (.0 27) 0.55 (.022) 0.46 (.08).39 (.055).4 (.045) 8.89 (.35 0) R E F. 0.25 (.0 ) M B A M MINIMUM RECOMMENDED FOOTPRINT.43 (.450) NOTES: D IM EN S IO N S AFTE R S OLD ER D IP. 2 DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 3 C O NTRO LLIN G D IM E NSIO N : IN C H. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 3.8 (.50) 7.78 (.7 00 ) 2.08 (.082) 2X 2.54 (.) 2X IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: ++ 49 (0) 672 96590 IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 39 0 45 0 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 (0)3 3983 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. /00 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/