HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Key Parameters Parameter Value Unit BS @T j,max 850 V 8 A R DS(on), max 0.65 Ω Qg, Typ 12 nc Package & Internal Circuit D-PAK March 2017 Absolute Maximum Ratings T J =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 800 V Gate-Source Voltage ±30 V Drain Current Continuous (T C = 25 ) 8 A Drain Current Continuous (T C = 100 ) 5 A M Drain Current Pulsed (Note 1) 24 A E AS Single Pulsed Avalanche Energy (Note 2) 240 mj dv/dt MOSFET dv/dt ruggedness, =0 640V 50 V/ns dv/dt Reverse diode dv/dt, =0 640V, S 15 V/ns P D Power Dissipation (T C = 25 ) 83 W T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case -- 1.5 R θja Junction-to-Ambient (minimum pad of 2 oz copper) -- 110 /W R θja Junction-to-Ambient (* 1 in 2 pad of 2 oz copper) -- 50
Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 μa 2.5 -- 4.5 V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 μa 800 -- -- V SS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 800 V, = 0 V -- -- 10 μa = 800 V, T J = 150 -- -- 100 μa I GSS Gate-Body Leakage Current = ±30 V, = 0 V -- -- ±100 na Dynamic Characteristics = 10 V, = 4 A -- 0.55 0.65 Ω C iss Input Capacitance -- 750 -- pf C oss Output Capacitance = 100 V, = 0 V, f = 1.0 MHz -- 38 -- pf C rss Reverse Transfer Capacitance -- 5.5 -- pf Switching Characteristics t d(on) Turn-On Time -- 32 -- ns t r Turn-On Rise Time = 400 V, = 8 A, -- 24 -- ns t d(off) Turn-Off Delay Time R G = 25 Ω -- 44 -- ns t f Turn-Off Fall Time -- 20 -- ns Q g Total Gate Charge -- 12 16 nc Q gs Gate-Source Charge = 640 V, = 8 A = 10 V -- 4.2 -- nc Q gd Gate-Drain Charge -- 3.2 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 8 I SM Pulsed Source-Drain Diode Forward Current -- -- 24 V SD Source-Drain Diode Forward Voltage I S = 8 A, = 0 V -- -- 1.3 V trr Reverse Recovery Time I S = 4 A, V R = 400 V -- 194 -- ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs -- 1.7 -- μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =2.4A, =50V, R G =25Ω, Starting T J =25 C 3. Pulse Test : Pulse Width 300μs, Duty Cycle 2% A
Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage, Drain Current [A] 1.2 1.1 1.0 0.9 0.8-100 -50 0 50 100 150 200 10 2 10 0 10-2 Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area is Limited by R DS(on) T J, Junction Temperature [ o C] Notes : 1. T C = 25 o C 2. T J(Max) = 150 o C 3. Single Pulse Note : 1. = 0 V 2. = 250µA 10-1 10 0 10 1 10 2 10 3, Drain-Source Voltage [V] 10 µs 100 µs 1 ms 10 ms 100 ms DC Figure 9. Maximum Safe Operating Area R DS(ON), (Normalized) Drain-Source On-Resistance, Drain Current [A] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Note : 1. = 10 V 2. = 4 A 0.0-100 -50 0 50 100 150 200 8 6 4 2 T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs Temperature 0 25 50 75 100 125 150 T C, Case Temperature [ o C] Figure 10. Maximum Drain Current vs Case Temperature Z θ JC (t), Thermal Response 10 0 10-1 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse Notes : 1. Z θ JC (t) = 1.5 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10-1 10 0 10 1 t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
12V 200nF 3mA 50KΩ 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as Fig 13. Resistive Switching Test Circuit & Waveforms R L Q gs 90% Q g Q gd Charge R G ( 0.5 rated ) V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 L L I 2 2 AS BS -------------------- BS -- BS I AS R G (t) (t) t p Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension D-PAK (TO-252L)