Features N-Channel VDS (V) = 3V ID = A (VGS = V) RDS(ON) < 3mΩ (VGS = V) RDS(ON) < 4mΩ (VGS = 4.V) P-Channel VDS (V) = -3V ID = -. A (VGS = -V) RDS(ON) < 4mΩ (VGS = -V) RDS(ON) < 74mΩ (VGS = -4.V) SOP-8. +.4 -... S G 3 S 4 G Unit:mm D D 7 D 8 D D D G G S N-channel S P-channel Absolute Maximum Ratings Ta = Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current VDS 3-3 V VGS ± ± TA= -. TA=7-4. IDM 3 - IAS,IAR 7 Avalanche energy L=.mH EAS,EAR 4 mj TA= Power Dissipation TA=7 t s Thermal Resistance.Junction- to-ambient Steady-State Thermal Resistance.Junction- to-lead Junction Temperature Storage Temperature Range ID PD RthJA RthJL TJ Tstg W.3. 9 /W 4 - to A
N-Channel Electrical Characteristics Ta = Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=μA, VGS=V 3 V Zero Gate Voltage Drain Current IDSS VDS=3V, VGS=V ua VDS=3V, VGS=V, TJ= Gate-Body Leakage Current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS, ID=μA..4 V VGS=V, ID=A 3 Static Drain-Source On-Resistance RDS(On) VGS=V, ID=A TJ= 48 mω VGS=4.V, ID=A 4 On State Drain Current ID(ON) VGS=V, VDS=V 3 A Forward Transconductance gfs VDS=V, ID=A S Input Capacitance Ciss 3 Output Capacitance Coss VGS=V, VDS=V, f=mhz 4 pf Reverse Transfer Capacitance Crss 3 Gate Resistance Rg VGS=V, VDS=V, f=mhz. 4.9 Ω Total Gate Charge (V) 4.3 Qg Total Gate Charge (4.V) 3. VGS=V, VDS=V, ID=A Gate Source Charge Qgs.8 Gate Drain Charge Qgd.3 Turn-On DelayTime td(on) 4. Turn-On Rise Time tr VGS=V,VDS=V,RL=.Ω. Turn-Off DelayTime td(off) RGEN=3Ω 4. ns Turn-Off Fall Time tf 3. Body Diode Reverse Recovery Time trr IF= A, di/dt= A/us 8. Body Diode Reverse Recovery Charge Qrr. 3 nc Maximum Body-Diode Continuous Current IS. A Diode Forward Voltage VSD IS=A,VGS=V V Note. The static characteristics in Figures to are obtained using <3us pulses, duty cycle.% max. nc Marking Marking 49 KA****
P-Channel Electrical Characteristics Ta = Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-μA, VGS=V -3 V Zero Gate Voltage Drain Current IDSS VDS=-3V, VGS=V - ua VDS=-3V, VGS=V, TJ= - Gate-Body leakage current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS ID=-μA -. -. V VGS=-V, ID=-.A 4 Static Drain-Source On-Resistance RDS(On) VGS=-V, ID=-.A TJ= 8 mω VGS=-4.V, ID=-4.A 74 On state drain current ID(ON) VGS=-V, VDS=-V - A Forward Transconductance gfs VDS=-V, ID=-.A 3 S Input Capacitance Ciss Output Capacitance Coss VGS=V, VDS=-V, f=mhz pf Reverse Transfer Capacitance Crss Gate resistance Rg VGS=V, VDS=V, f=mhz 3.. Ω Total Gate Charge (V) 9. Qg Total Gate Charge (4.V) 4. VGS=-V, VDS=-V, ID=-.A Gate Source Charge Qgs. Gate Drain Charge Qgd. Turn-On DelayTime td(on) 7. Turn-On Rise Time tr VGS=-V, VDS=-V, RL=.7Ω,. Turn-Off DelayTime td(off) RGEN=3Ω 9 ns Turn-Off Fall Time tf 7 Body Diode Reverse Recovery Time trr IF=-.A, di/dt=a/us Body Diode Reverse Recovery Charge Qrr.3 nc Maximum Body-Diode Continuous Current IS -. A Diode Forward Voltage VSD IS=-A,VGS=V - V Note.The static characteristics in Figures to are obtained using <3us pulses, duty cycle.% max. nc 3
N-Channel Typical Characterisitics 3 V V 4.V V DS =V 4V 9 I D (A) 3.V I D (A) V GS =3V 3 4 V DS (Volts) Fig : On-Region Characteristics 3... 3 3. 4 4. V GS (Volts) Figure : Transfer Characteristics 4 4 3 3 V GS =4.V V GS =V Normalized On-Resistance.8..4. V GS =V I D =A V GS =4.V I D =A 4 8 I. D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.8 7 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 8 I D =A.E+.E+.E+ 4 I S (A).E-.E-.E-3.E-4 4 8 V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage.E-...4..8.. V SD (Volts) Figure : Body-Diode Characteristics 4
N-Channel Typical Characterisitics 8 V DS =V I D =A 4 V GS (Volts) 4 Capacitance (pf) 3 C oss C iss 3 4 Q g (nc) Figure 7: Gate-Charge Characteristics C rss 3 V DS (Volts) Figure 8: Capacitance Characteristics. I D (Amps).... R DS(ON) limited µs µs ms ms T J(Max) = C DC s T A =.. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Power (W) T A =... Figure : Single Pulse Power Rating Junctionto-Ambient (Note F) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T
P-Channel Typical Characterisitics -V -V -8V -4.V 3 V DS =-V -I D (A) -4V -I D (A) V GS =-3.V 3 4 -V DS (Volts) Fig : On-Region Characteristics... 3 3. 4 4.. -V GS (Volts) Figure : Transfer Characteristics 8.8 7 4 3 V GS =-4.V V GS =-V Normalized On-Resistance..4. V GS =-V I D =-.A V GS =-4.V I D =-4.A 4 8 -I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.8 7 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 8 4 I D =-.A 4 8 -V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage -I S (A).E+.E+.E+.E-.E-.E-3.E-4.E-...4..8.. -V SD (Volts) Figure : Body-Diode Characteristics
P-Channel Typical Characterisitics 8 V DS =-V I D =-.A 8 7 C iss -V GS (Volts) 4 Capacitance (pf) 4 3 C oss 4 8 Q g (nc) Figure 7: Gate-Charge Characteristics C rss 3 -V DS (Volts) Figure 8: Capacitance Characteristics. T A = -I D (Amps)... R DS(ON) T J(Max) = C T A = DC µs µs ms ms s Power (W)... -V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)... Figure : Single Pulse Power Rating Junctionto-Ambient (Note F) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T 7