Ordering number : EN886A SJ661 P-Channel Power MOSFET 6V, 8A, 9mΩ, TO-6-L/TO-6-L http://onsemi.com Features ON-resistance RDS(on)1=9.mΩ(typ.) 4V drive Input capacitance Ciss=46pF (typ.) Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --6 V Gate-to-Source Voltage VGSS ± V Drain Current (DC) ID --8 A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% --1 A Allowable Power Dissipation PD Continued on next page. 1.6 W Tc= C 6 W Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) -1-1 1. 1. 4. 8. 1. SJ661-1E 1. 1. 4 1. SJ661-DL-1E 4. 8. 1. 1.. 1.4 1..8 1.8 9...9..9. 1.4 1 1..8.4.4 9. 1.4.4. 1..9..9 1 1 : Gate 1 : Gate : Drain : Drain : Source : Source 4 : Drain.4.4 TO-6-L TO-6-L.4 to..4 Product & Package Information Package : TO-6-L Package : TO-6-L JEITA, JEDEC : TO-6 JEITA, JEDEC : SC-8, TO-6 Minimum Packing Quantity : pcs./magazine Minimum Packing Quantity : 8pcs./reel Marking Packing Type : DL Electrical Connection, 4 J661 LOT No. DL 1 Semiconductor Components Industries, LLC, 1 July, 1 1 TKIM/N18QA MSIM TB-18 No.886-1/9
SJ661 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C Avalanche Energy (Single Pulse) *1 EAS mj Avalanche Current * IAV --8 A Note : *1 VDD= -V, L=μH, IAV= -8A (Fig.1) * L μh, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=V --6 V Zero-Gate Voltage Drain Current IDSS VDS=--6V, VGS=V --1 μa Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=--1V, ID=--1mA --1. --.6 V Forward Transfer Admittance yfs VDS=--1V, ID=--19A 18 1 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--19A, VGS=--1V 9. 9 mω RDS(on) ID=--19A, VGS=--4V 4 6 mω Input Capacitance Ciss 46 pf Output Capacitance Coss VDS=--V, f=1mhz 4 pf Reverse Transfer Capacitance Crss pf Turn-ON Delay Time td(on) ns Rise Time tr 8 ns See Fig. Turn-OFF Delay Time td(off) 9 ns Fall Time tf 19 ns Total Gate Charge Qg 8 nc Gate-to-Source Charge Qgs VDS=--V, VGS=--1V, ID=--8A 1 nc Gate-to-Drain Miller Charge Qgd 1 nc Diode Forward Voltage VSD IS=--8A, VGS=V --1. --1. V Fig.1 Avalanche Resistance Test Circuit Fig. Switching Time Test Circuit Ω RG L V --1V VIN VIN VDD= --V ID= --19A RL=1.8Ω V --1V Ω SJ661 VDD PW=1μs D.C. 1% G D VOUT P.G Ω S SJ661 Ordering Information Device Package Shipping memo SJ661-1E TO-6-L pcs./magazine Pb Free SJ661-DL-1E TO-6-L 8pcs./reel No.886-/9
SJ661 --8 -- --6 -- --4 -- -- --1 ID -- VDS --1V --4V VGS= --V --. --1. --1. --. --. --. --. --4. --4. --. Drain-to-Source Voltage, V DS -- V IT848 RDS(on) -- VGS I D = --19A --6V Tc= C --8 -- --6 -- --4 -- -- --1 VDS= --1V ID -- VGS C Tc= C -- C --. --1. --1. --. --. --. --. --4. --4. --. Gate-to-Source Voltage, V GS -- V IT849 RDS(on) -- Tc C Tc= -- C C Static Drain-to-Source On-State Resistance, R DS (on) -- mω 6 4 1 Tc= C C -- C Static Drain-to-Source On-State Resistance, R DS (on) -- mω 6 4 1 ID= --19A, V GS = --4V ID= --19A, VGS= --1V Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns 1 1 -- -- --4 -- --6 -- --8 --9 --1 1 V DS = --1V 1 Gate-to-Source Voltage, V GS -- V IT8 Case Temperature, Tc -- C yfs -- ID IS -- VSD 1. --.1 --1. --1 --1 IT8 V DD = --V V GS = --1V Tc= -- C SW Time -- ID t d (off) tr t f C C t d (on) Source Current, I S -- A Ciss, Coss, Crss -- pf --1 --1. --.1 --.1 1 1 -- -- 1 1 1 --1 Tc= C C -- C --. --.6 --.9 IT81 Diode Forward Voltage, V SD -- V Ciss, Coss, Crss -- VDS f=1mhz Ciss Coss Crss --1. V GS =V IT8 --1. 1 --.1 --1. --1 --1 IT84 1 -- --1 --1 -- -- -- Drain-to-Source Voltage, V DS -- V IT8 No.886-/9
SJ661 Gate-to-Source Voltage, V GS -- V Allowable Power Dissipation, P D -- W --1 VDS = --V --9 I D = --8A --8 -- --6 -- --4 -- -- --1 VGS -- Qg 1 4 6 8 Total Gate Charge, Qg -- nc IT86 PD -- Ta. 1.6 1. 1.. Allowable Power Dissipation, P D -- W --1 --1 --1. I DP = --1A(PW 1μs) I D = --8A A S O Operation in this area is limited by R DS (on). 1ms 1ms DC operation 1μs 1ms 1μs Tc= C --.1 Single pulse --.1 --1. --1 --1 Drain-to-Source Voltage, V DS -- V IT1681 PD -- Tc 6 6 4 1 4 6 8 1 1 Ambient Temperature, Ta -- C 14 16 IT8 4 6 8 1 1 Case Temperature, Tc -- C 14 16 IT88 No.886-4/9
SJ661 Taping Specification SJ661-DL-1E No.886-/9
SJ661 Outline Drawing SJ661-DL-1E Land Pattern Example Mass (g) Unit 1. * For reference mm Unit: mm No.886-6/9
SJ661 Magazine Specification SJ661-1E No.886-/9
SJ661 Outline Drawing SJ661-1E Mass (g) Unit 1.6 * For reference mm No.886-8/9
SJ661 Note on usage : Since the SJ661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.886-9/9