Ordering number : ENA111A ATP114 P-Channel Power MOSFET 6V, A, 16mΩ, Single ATPAK http://onsemi.com Features ON-resistance RDS(on)1=1mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --6 V Gate-to-Source Voltage VGSS ± V Drain Current (DC) ID -- A Drain Current (PW 1μs) IDP PW 1μs, duty cycle 1% --16 A Allowable Power Dissipation PD Tc= C 6 W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C Avalanche Energy (Single Pulse) *1 EAS 1 mj Avalanche Current * IAV --8 A Note : *1 VDD= -1V, L=μH, IAV= -8A * L 1μH, Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) -1 6. 4.. 9. 1..4 4.6 ATP114-TL-H 4.6.6.4 6. Product & Package Information Package : ATPAK JEITA, JEDEC : - Minimum Packing Quantity :, pcs./reel Packing Type: TL TL Electrical Connection Marking ATP114 LOT No.. 1.8.. 1..6..4. 1 : Gate : Drain : Source 4 : Drain 1,4.1 ATPAK Semiconductor Components Industries, LLC, 1 July, 1 611 TKIM/1PA TKIM TC-4 No. A111-1/
Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=V --6 V Zero-Gate Voltage Drain Current IDSS VDS=--6V, VGS=V --1 μa Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=--1V, ID=--1mA --1. --.6 V Forward Transfer Admittance yfs VDS=--1V, ID=--8A 6 S RDS(on)1 ID=--8A, VGS=--1V 1 16 mω Static Drain-to-Source On-State Resistance RDS(on) ID=--14A, VGS=--4.V 1 1 mω RDS(on) ID=--A, VGS=--4V 16. 4 mω Input Capacitance Ciss 4 pf Output Capacitance Coss VDS=--V, f=1mhz 4 pf Reverse Transfer Capacitance Crss 1 pf Turn-ON Delay Time td(on) 19 ns Rise Time tr ns See specified Test Circuit. Turn-OFF Delay Time td(off) 4 ns Fall Time tf ns Total Gate Charge Qg 9 nc Gate-to-Source Charge Qgs VDS=--V, VGS=--1V, ID=--Ap 1 nc Gate-to-Drain Miller Charge Qgd 1. nc Diode Forward Voltage VSD IS=--A, VGS=V --.9 --1. V Switching Time Test Circuit V --1V VIN PW=1μs D.C. 1% VIN G VDD= --V D ID= --8A RL=1.Ω VOUT P.G Ω S ATP114 Ordering Information Device Package Shipping memo ATP114-TL-H ATPAK,pcs./reel Pb Free and Halogen Free No. A111-/
Static Drain-to-Source On-State Resistance, R DS (on) -- mω -- -- --4 --4 -- -- -- -- --1 --1 -- 1 1 Tc= C --16.V --1.V --8.V ID -- VDS --6.V --4.V --4.V --.V --.V VGS= --.V --. --.4 --.6 --.8 --1. --1. --1.4 --1.6 --1.8 --. Drain-to-Source Voltage, V DS -- V IT1 RDS(on) -- VGS Tc= C I D = --A --8A --14A Static Drain-to-Source On-State Resistance, R DS (on) -- mω --8 VDS= --1V -- --6 -- --4 -- -- --1 1 1 ID -- VGS C Tc= C -- C Tc= -- C C C --. --1. --1. --. --. --. --. --4. Gate-to-Source Voltage, V GS -- V IT1 RDS(on) -- Tc VGS= --4.V, ID = --A V GS = --4.V, I D = --14A VGS = --1.V, I D = --8A Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns -- --4 --6 --8 --1 --1 --14 --16 Gate-to-Source Voltage, V GS -- V IT14 Case Temperature, Tc -- C IT1 yfs -- ID IS -- VSD VDS= --1V --1 V GS =V 1 --1 --1. 1 --.1 --.1 1. --.1 --.1 --1. --1 --. --.4 --.6 --.8 --1. --1. --1.4 IT16 Diode Forward Voltage, V SD -- V IT1 SW Time -- ID Ciss, Coss, Crss -- VDS 1 1 f=1mhz 1 Tc= -- C td (off) tf t r C C t d (on) V 1 DD = --V V GS = --1V --.1 --1. --1 --1 IT18 Source Current, I S -- A Ciss, Coss, Crss -- pf 1 1 --6 --4 -- 4 6 8 1 1 14 16 Tc= C C -- C Ciss Coss Crss --1 -- -- --4 -- --6 Drain-to-Source Voltage, V DS -- V IT19 No. A111-/
Gate-to-Source Voltage, V GS -- V VGS -- Qg --1 VDS = --V --9 I D = --A --8 -- --6 -- --4 -- -- --1 1 4 6 8 9 1 Total Gate Charge, Qg -- nc IT11 PD -- Tc I DP = --16A (PW 1μs) --1 I D = --A --1 --1. --.1 --.1 1 Operation in this area is limited by R DS (on). Tc= C A S O 1ms 1ms 1ms DC operation 1μs 1μs --1. --1 --1 Drain-to-Source Voltage, V DS -- V IT11 EAS -- Ta Allowable Power Dissipation, P D -- W 6 4 1 Avalanche Energy derating factor -- % 1 8 6 4 4 6 8 1 1 14 16 Case Temperature, Tc -- C IT11 1 1 1 1 Ambient Temperature, Ta -- C IT119 No. A111-4/
Taping Specification ATP114-TL-H No. A111-/
Outline Drawing ATP114-TL-H Land Pattern Example Mass (g) Unit.66 * For reference mm Unit: mm 6. 1.6 6. 1... No. A111-6/
Note on usage : Since the ATP114 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A111-/
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