P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S Applications Load Switch Power Management Battery Protection G SOT3-3 D Absolute Maximum Ratings S P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A =5 C Unless Otherwise Noted) V DSS Drain-Source Voltage - V GSS Gate-Source Voltage ± V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current T A =5 C - A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T A =5 C - A I D T A =5 C -5 Continuous Drain Current(V GS =-V) A T A =7 C -3. P D Maximum Power Dissipation T A =5 C.3 T A =7 C.8 W R JC Thermal Resistance-Junction to Case - C/W R JA 3 Thermal Resistance-Junction to Ambient C/W Drain-Source Avalanche Ratings E AS 4 Avalanche Energy, Single Pulsed - mj Rev. A MAR., 7 www.ruichips.com
Electrical Characteristics (T A =5 C Unless Otherwise Noted) RUP7C Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-5µA - V I DSS V DS =-V, V GS =V - Zero Gate Voltage Drain Current µa T J =5 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-5µA -.4 -.7 -. V I GSS Gate Leakage Current V GS =±V, V DS =V ± na R DS(ON) 5 V GS =-4.5V, I DS =-5A Drain-Source On-state Resistance VGS =-.5V, I DS =-4A 8 mω 3 38 mω Diode Characteristics 5 V SD Diode Forward Voltage I SD =-A, V GS =V -. V trr Reverse Recovery Time 7 ns ISD=-5A, dlsd/dt=a/µs Qrr Reverse Recovery Charge 3 nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz.9 Ω C iss Input Capacitance V GS =V, 64 C oss Output Capacitance V DS =-V, Frequency=.MHz 35 pf C rss Reverse Transfer Capacitance 65 t d(on) Turn-on Delay Time 9 t V r Turn-on Rise Time DD =-V, R L =3.8Ω, 6 I DS =-5A, V GEN =-4.5V, t d(off) Turn-off Delay Time R 45 G =6Ω t f Turn-off Fall Time ns Gate Charge Characteristics 6 Q g Total Gate Charge Q gs Gate-Source Charge V DS =-6V, V GS =-V, I DS =-5A Q gd Gate-Drain Charge 3 nc Notes: Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax. Starting T J = 5 C. 5Pulse test;pulse width 3µs, duty cycle %. 6Guaranteed by design, not subject to production testing. Rev. A MAR., 7 www.ruichips.com
Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RUP7C QXYWW SOT3-3 Tape&Reel 3 7 8mm The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Rev. A MAR., 7 3 www.ruichips.com
Typical Characteristics Power Dissipation 6 Drain Current P D -Power (W) -I D - Drain Current (A) 5 5 75 5 5. T J - Junction Temperature ( C) R DS(ON) limited Safe Operation Area DC µs µs ms ms T A =5 C... -V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistance (mω) -I D - Drain Current (A) 5 4 3 VGS=-4.5V 5 5 75 5 5 T J - Junction Temperature ( C) Drain Current 8 Ids=-5A 6 4 3 4 5 6 7 8 -V GS - Gate-Source Voltage (V) ZthJA - Thermal Response ( C/W) Thermal Transient Impedance Duty=.5,.,.,.5,.,., Single Pulse Single Pulse. R θja = C/W. E-5.... Square Wave Pulse Duration (sec) Rev. A MAR., 7 4 www.ruichips.com
Typical Characteristics Output Characteristics -I D - Drain Current (A) 3 5 5 5-4.5V -3V -.5V -V -V 3 4 5 R DS(ON) - On Resistance (mω) 8 6 4 Drain-Source On Resistance -.5V -4.5V 4 6 8 -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) Normalized On Resistance.5..5. V GS =-4.5V I D =-5A Drain-Source On Resistance.5 T J =5 C Rds(on)=mΩ....4.6.8..4-5 -5 5 5 75 5 5 T J - Junction Temperature ( C) -I S - Source Current (A). Source-Drain Diode Forward T J =5 C T J =5 C -V SD - Source-Drain Voltage (V) C - Capacitance (pf) 8 6 4 Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) 9 8 7 6 5 4 3 VDS=-6V IDS=-5A Gate Charge 4 6 8 Q G - Gate Charge (nc) Rev. A MAR., 7 5 www.ruichips.com
Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A MAR., 7 6 www.ruichips.com
EDAAA.eeERUP7C Package Information SOT3-3 LbMIN NOM MAX MIN NOM MAX θcsymbol MM INCH A.5.5.5.4.45.49 A..5....4 A.5..5.4.43.45 b.3.4.5..6. c..5..4.6.8 D.8.9 3...5.9 E.5.6.7.59.63.67 E.65.8.95.4..6 e e.8.95 BSC.9..7.37 BSC.75.79 L.3.45.6..8.4 θ 4 8 4 8 Rev. A MAR., 7 7 www.ruichips.com
Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 83-5334 FAX: (86-755) 83-478 E-mail: Sales-SZ@ruichips.com Rev. A MAR., 7 8 www.ruichips.com