IGBT with Diode IXSN 5NAU S = V 5 = 8 A Combi Pack (sat) = V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings S = 5 C to 5 C V V CGR = 5 C to 5 C; E = MW A S Continuous ± V M Transient ± V 5 = 5 C 8 A = C A M = 5 C, ms A SSOA = 5 V, T VJ = 5 C, = W M = 8 A (RBSOA) Clamped inductive load, L = mh @.8 S t SC = 5 V, = V, = 5 C ms (SCSOA) = W, non repetitive P C = 5 C 5 W V ISOL 5/ Hz t = min 5 V~ I ISOL ma t = s V~ -55... +5 C M 5 C T stg -55... +5 C M d Mounting torque.5/ Nm/lb.in. Terminal connection torque (M).5/ Nm/lb.in. Weight g Symbol Test Conditions Characteristic Values ( = 5 C, unless otherwise specified) min. typ. max. BS = ma, = V V (th) = ma, = 8 V ES =.8 S = 5 C 75 ma = V = 5 C 5 ma I GES = V, = ± V ± na (sat) =, = 5 V V minibloc, SOT-7 B = Emitter, = Collector = Gate, = Emitter Either Emitter terminal can be used as Main or Kelvin Emitter Features International standard package minibloc Aluminium-nitride isolation - high power dissipation Isolation voltage V~ Low (sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short t rr and I RM Low collector-to-case capacitance (< 5 pf) - reducesd RFI Low package inductance (< nh) - easy to drive and to protect Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings Easy to mount with screws High power density IXYS reserves the right to change limits, test conditions, and dimensions. IXYS All rights reserved 8H(5/7) - 5
IXSN5NAU Symbol Test Conditions Characteristic Values ( = 5 C, unless otherwise specified) min. typ. max. minibloc, SOT-7 B g fs = ; = V, S Pulse test, t ms, duty cycle d % C ies 5 pf C oes = 5 V, = V, f = MHz pf C res pf Q g 5 nc Q ge =, = 5 V, =.5 S 5 nc Q gc 88 nc t d(on) Inductive load, = 5 C 7 ns t =, = 5 V, L = mh, ri ns V t CE =.8 S, =.7 W d(off) ns Remarks: Switching times may increase for V ns CE (Clamp) >.8 S, higher or increased.5 mj t d(on) Inductive load, = 5 C 7 ns t ri =, = 5 V, L = mh ns E on =.8 S, =.7 W.7 mj t d(off) Remarks: Switching times may increase 5 ns t for V fi CE (Clamp) >.8 S, higher or ns increased R E G off mj M screws (x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A.5.88..55 B 7.8 8..7. C.... D.... E.... F. 5..587.55 G...8. H 8. 8...55 J.8...8 K 8...5.78 L.7.8.. M..85..5 N 5.5 5... O.8..78.8 P.5 5.7.5.5 Q.5..5.5 R...55.7 S.7.85.8. T.5 5.7.8.87 U -.5. -.. R thjc.5 K/W R thck.5 K/W Reverse Diode (FRED) Characteristic Values ( = 5 C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F =, = V,.8 V Pulse test, t ms, duty cycle d % I RM =, = V, -di F /dt = 8 A/ms A t rr V R = V = 5 C 75 ns = A; -di/dt = A/ms; V R = V = 5 C 5 5 ns R thjc.8 K/W IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:,85,5,88, 5,7,58 5,, 5,87,7 5,8,75,85,7,,8 5,,7 5,,7 5,7,8 5,8,5-5
IXSN5NAU Fig. Saturation Characteristics Fig. Output Characterstics 8 7 5 T V J = 5 C = 5V = 5 C = 5V 8 V V 7V 5 V 8 V V 7V 8 8 8 7 5 Fig. Collector-Emitter Voltage Fig. Temperature Dependence vs. Gate-Emitter Voltage of Output Saturation Voltage = A = 5 C = A = 8A 8 5 (sat) - Normalized.5.......8 =5V = 8A = A = A.7-5 -5 5 5 75 5 5 - Degrees C Fig.5 Input Admittance Fig. Temperature Dependence of Breakdown and Threshold Voltage 8 7 5 = V = 5 C = 5 C = - C BV / (th) - Normalized......8 BS = ma 8th) = ma 5 7 8.7-5 -5 5 5 75 5 5 - Degrees C IXYS All rights reserved - 5
IXSN5NAU - nanoseconds 75 5 5 Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy Fall Time on Collector Current Per Pulse and Fall Time on = 5 C = W - millijoules - nanoseconds 8 = 5 C = 5A 8 - millijoules 5 7 8 5 - Ohms Fig. Gate Charge Characteristic Curve Fig. Turn-Off Safe Operating Area 5 = 5A = 8V = 5 C =.7W dv/dt < V/ns. 5 5 5 Q g - ncoulombs. 5 7 Fig. Transient Thermal Impedance Thermal Response - K/W.. Diode IGBT Single Pulse...... Time - Seconds IXYS All rights reserved - 5
IXSN5NAU Fig. Forward current Fig. Recovery charge versus -di F /dt. Fig. Peak reverse current versus versus voltage drop. -di F /dt. Fig. 5. Dynamic parameters versus Fig. Recovery time versus -di F /dt. Fig. 7 Peak forward voltage vs. di F /dt. junction temperature. Fig. 8 Transient thermal impedance junction to case. IXYS All rights reserved 5-5