INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @ 25 C, V GE = 5V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-22AB package Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC2KD2 and IRGBC2MD2 products For hints see design tip 973 Absolute Maximum Ratings IRG4BC2KD Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 6 I C @ T C = C Continuous Collector Current 9. I CM Pulsed Collector Current 32 A I LM Clamped Inductive Load Current 32 I F @ T C = C Diode Continuous Forward Current 7. I FM Diode Maximum Forward Current 32 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P D @ T C = 25 C Maximum Power Dissipation 6 P D @ T C = C Maximum Power Dissipation 24 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance G C E n-channel TO-22AB PD -9599A Short Circuit Rated UltraFast IGBT V CES = 6V V CE(on) typ. = 2.27V @V GE = 5V, I C = 9.A Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT 2. R θjc Junction-to-Case - Diode 3.5 C/W R θcs Case-to-Sink, flat, greased surface.5 R θja Junction-to-Ambient, typical socket mount 8 Wt Weight 2 (.7) g (oz) www.irf.com 4/24/2
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 6 V V GE = V, I C = 25µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.49 V/ C V GE = V, I C =.ma V CE(on) Collector-to-Emitter Saturation Voltage 2.27 2.8 I C = 9.A V GE = 5V 3. V I C = 6A See Fig. 2, 5 2.43 I C = 9.A, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, I C = 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 25µA g fe Forward Transconductance 2.9 4.3 S V CE = V, I C = 9.A I CES Zero Gate Voltage Collector Current 25 µa V GE = V, V CE = 6V V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop.4.7 V I C = 8.A See Fig. 3.3.6 I C = 8.A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 34 5 I C = 9.A Q ge Gate - Emitter Charge (turn-on) 4.9 7.4 nc V CC = 4V See Fig.8 Q gc Gate - Collector Charge (turn-on) 4 2 V GE = 5V t d(on) Turn-On Delay Time 54 t r Rise Time 34 T J = 25 C ns t d(off) Turn-Off Delay Time 8 27 I C = 9.A, V CC = 48V t f Fall Time 72 V GE = 5V, R G = 5Ω E on Turn-On Switching Loss.34 Energy losses include "tail" E off Turn-Off Switching Loss.3 mj and diode reverse recovery E ts Total Switching Loss.64.96 See Fig. 9,,4 t sc Short Circuit Withstand Time µs V CC = 36V, T J = 25 C V GE = 5V, R G = 5Ω, V CPK < 5V t d(on) Turn-On Delay Time 5 T J = 5 C, See Fig.,4 t r Rise Time 37 I C = 9.A, V CC = 48V ns t d(off) Turn-Off Delay Time 22 V GE = 5V, R G = 5Ω t f Fall Time 6 Energy losses include "tail" E ts Total Switching Loss.85 mj and diode reverse recovery L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 45 V GE = V C oes Output Capacitance 6 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 4 ƒ =.MHz t rr Diode Reverse Recovery Time 37 55 ns T J = 25 C See Fig. 55 9 T J = 25 C 4 I F = 8.A I rr Diode Peak Reverse Recovery Current 3.5 5. A T J = 25 C See Fig. 4.5 8. T J = 25 C 5 V R = 2V Q rr Diode Reverse Recovery Charge 65 38 nc T J = 25 C See Fig. 24 36 T J = 25 C 6 di/dt = 2Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 24 A/µs T J = 25 C See Fig. During t b 2 T J = 25 C 7 2 www.irf.com
LOAD CURRENT (A) 8 6 4 Square wave: 6% of rated voltage I For both: Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 3 W 2 Ideal diodes. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T = 25 o J C T = 5 o J C V GE = 5V 2µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 5 o J C T = 25 o J C V CC = 5V 5µs PULSE WIDTH 5 5 2 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 2 5 5 V CE, Collector-to-Emitter Voltage(V) 5. 4. 3. 2. V GE = 5V 8 us PULSE WIDTH I C = 8 A I C = 9.A 9 A I C = 4.5 A 25 5 75 25 5 T C, Case Temperature ( C). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ). D =.5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC...... t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 8 6 4 2 VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V CC = 4V I C = 9.A C res V CE, Collector-to-Emitter Voltage (V) 2 3 4 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj).8.7.6 V CC = 48V V GE = 5V T = 25 J C I C = 9.A Total Switching Losses (mj) R G 5Ω = Ohm V GE = 5V V CC = 48V I C = 8A I C = 9.A 9A I C = 4.5A.5 2 3 4 5 R G, Gate Resistance ( Ω (Ohm) ). -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 3. 2.. R G = 5Ω Ohm T J = 5 C V CC = 48V V GE = 5V. 4 8 2 6 2 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) V GE = 2V o T J = 25 C SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 5 C T J = 25 C T J = 25 C..4.8.2.6 2. 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
8 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C I F = 6A t rr - (ns) 6 4 I F = 8.A I IRRM - (A) I F = 8.A I F = 6A 2 I F = 4.A I = 4.A F di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 5 4 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C Q RR - (nc) 3 2 I F = 6A I F = 8.A di(rec)m/dt - (A/µs) I F = 4.A I F = 8.A I F = 6A I = 4.A F di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7
Same type device as D.U.T. +Vge 9% Vge Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µ S Eoff = Vce ic Ic dt dt t t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx Vcc % Ic td(on) t Vce tr 9% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = Vce Ic dt t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY W AVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 48V R L = 48V 4 X I C @25 C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit www.irf.com 9
Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 5Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. Case Outline TO-22AB 2.87 (.3) 2.62 (.3) 5.24 (.6) 4.84 (.584) 4.9 (.555) 3.47 (.53).54 (.45).29 (.45) 4 2 3 3.78 (.49) 3.54 (.39) - A - 6.47 (.255) 6. (.24).5 (.45) MIN 3 X 4.6 (.6) 3.55 (.4) 3.96 (.6) 3.55 (.4) 4.69 (.85) 4.2 (.65) - B -.32 (.52).22 (.48) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 DIM ENSIONS ARE SHO W N M ILLIM ETER S (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-22AB. LEAD ASSIGNMENTS - GATE 2 - COLLE CTO R 3 - EM ITTER 4 - COLLE CTO R.4 (.55) 3 X.5 (.45) 2.54 (.) 2X.93 (.37) 3 X.69 (.27).36 (.4) M B A M.55 (.22) 3 X.46 (.8) 2.92 (.5) 2.64 (.4) CONFORMS TO JEDEC OUTLINE TO-22AB D im ens ions in M illim eters and (Inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 ()2 8645 8 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (95) 453 22 IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: ++ 49 () 672 9659 IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 39 45 IR JAPAN: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 ()3 3983 86 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 ()838 463 IR TAIWAN:6 Fl. Suite D. 27, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-()2 2377 9936 Data and specifications subject to change without notice. / www.irf.com
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