INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to 0µs @ 25 C, Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package G E n-channel V CES = 600V V CE(on) typ. = 2.V @, I C = 25A Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Absolute Maximum Ratings TO-247AC Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I C @ T C = 25 C Continuous Collector Current 42 I C @ T C = 00 C Continuous Collector Current 25 A I CM Pulsed Collector Current 84 I LM Clamped Inductive Load Current 84 t sc Short Circuit Withstand Time 0 µs V GE Gate-to-Emitter Voltage ±20 V E ARV Reverse Voltage Avalanche Energy ƒ 5 mj P D @ T C = 25 C Maximum Power Dissipation 60 W P D @ T C = 00 C Maximum Power Dissipation 65 T J Operating Junction and -55 to +50 T STG Storage Temperature Range C Soldering Temperature, for 0 sec. 300 (0.063 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. 0 lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.77 R θcs Case-to-Sink, Flat, Greased Surface 0.24 C/W R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.2) g (oz) 4/5/2000
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = 0V, I C =.0A V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.46 V/ C V GE = 0V, I C =.0mA 2.0 2.6 I C = 25A V CE(ON) Collector-to-Emitter Saturation Voltage 2.70 I C = 42A See Fig.2, 5 V 2.4 I C = 25A, T J = 50 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -3 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance 7.0 4 S V CE = 00 V, I C = 25A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = 0V, T J = 25 C 2000 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-to-Emitter Leakage Current ±00 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 20 80 I C = 25A Q ge Gate - Emitter Charge (turn-on) 6 24 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 5 77 t d(on) Turn-On Delay Time 30 t r Rise Time 5 T J = 25 C ns t d(off) Turn-Off Delay Time 40 20 I C = 25A, V CC = 480V t f Fall Time 40 20, R G = 0Ω E on Turn-On Switching Loss 0.62 Energy losses include "tail" E off Turn-Off Switching Loss 0.33 mj See Fig. 9,0,4 E ts Total Switching Loss 0.95.4 t sc Short Circuit Withstand Time 0 µs V CC = 400V, T J = 25 C, R G = 0Ω, V CPK < 500V t d(on) Turn-On Delay Time 30 T J = 50 C, t r Rise Time 8 I C = 25A, V CC = 480V ns t d(off) Turn-Off Delay Time 90, R G = 0Ω t f Fall Time 50 Energy losses include "tail" E ts Total Switching Loss.9 mj See Fig.,4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 600 V GE = 0V C oes Output Capacitance 30 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 55 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = 0µH, R G = 0Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2 www.irf.com
Load Current (A) 60 40 20 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 C T sink = 90 C G ate drive as specified Power Dissipation = 35W Triangular w ave: Clamp voltage: 80% of rated Ideal diodes 0 A 0. 0 00 f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 00 00 I C, Collector-to-Emitter Current (A) 0 T = 50 o J C T = 25 o J C 20µs PULSE WIDTH 0. 0 V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C 0 V CC = 50V 5µs PULSE WIDTH 5 7 9 V GE, Gate-to-Emitter Voltage (V) A Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 50 40 30 20 0 V CE, Collector-to-Emitter Voltage(V) 5.0 4.0 3.0 2.0 80 us PULSE WIDTH I C = 50 A I C = 25 A I C = 2.5 A 0 25 50 75 00 25 50 T C, Case Temperature ( C).0-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = 0.50 0.20 0.0 0.05 PDM t 0.02 t2 SINGLE PULSE 0.0 (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 3000 2500 2000 500 000 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce SHORTED Cres = Cgc Coes = Cce + Cgc C ies 500 C oes C res 0 0 00 V CE, Collector-to-Emitter Voltage (V) V GE, Gate-to-Emitter Voltage (V) 20 V CC = 400V I C = 25A 6 2 8 4 0 0 20 40 60 80 00 20 40 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj).80.60.40.20.00 V CC = 480V T = 25 J C I C = 25A Total Switching Losses (mj) 0 R G = 0Ohm Ω V CC = 480V I C = 50A I C = 25A I C = 2.5A 0.80 0 0 20 30 40 50 R G, Gate Resistance (Ohm) Ω 0. -60-40 -20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 0 - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 5.0 4.0 3.0 2.0.0 R G = 0Ohm Ω T J = 50 C V CC = 480V 0.0 0 0 20 30 40 50 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) 000 00 V GE = 20V T = 25 o J C 0 SAFE OPERATING AREA 0 00 000 V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6 www.irf.com
50V 000V L V * C D.U.T. 0-480V 480µF 960V R L = 480V 4 X I C @25 C * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 50V 000V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% ƒ 0% V C 90% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% 0% t d(on) t r E on E ts = (E on +E off ) www.irf.com 7 t f E off t=5µs
Case Outline and Dimensions TO-247AC * 20.30 (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 5.90 (.626) 5.30 (.602) - B - 2 3.40 (.056) 3X.00 (.039) 0.25 (.00) M C A S 3.40 (.33) 3.00 (.8) 3.65 (.43) 3.55 (.40) 0.25 (.00) M D - A - 5.50 (.27) 2X - C - 4.30 (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) B M - D - 5.30 (.209) 4.70 (.85) 2.50 (.089).50 (.059) 4 0.80 (.03) 3X 0.40 (.06) 2.60 (.02) 2.20 (.087) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 DIM ENSIONS ARE SHO W N M ILLIM ETER S (INCHES). 4 CO NFO RM S TO JEDEC O UTLINE TO-247AC. LEAD ASSIGNMENTS - GATE 2 - COLLECTO R 3 - EM ITTER 4 - COLLECTO R * LONGER LEADED (20mm) VERSION AVAILABLE (TO-247AD) TO ORDER ADD "-E" SUFFIX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) 252-705 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: ++ 49 (0) 672 96590 IR ITALY: Via Liguria 49, 007 Borgaro, Torino Tel: ++ 39 0 45 0 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 (0)3 3983 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 0673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/