ABB 5SP16F2800 Control hyristor datasheet http://www.manuallib.com/abb/5stp16f2800-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability ManualLib.com collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. http://www.manuallib.com
V DRM = 2800 V I (AV)M = 1400 A I (RMS) = 2210 A I SM = 18 10 3 A V 0 = 0.82 V r = 0.37 m Phase Control hyristor 5SP 16F2800 Doc. No. 5SYA1022-04 May 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Parameter Symbol Conditions 5SP 16F2800 Unit Max repetitive peak forward and reverse blocking voltage V DRM, V RRM f = 50 Hz, t p = 10 ms, vj = 5 125 C, Note 1 2800 V Critical rate of rise of dv/dt crit Exp. to 1880 V, vj = 125 C 1000 V/µs commutating voltage Forward leakage current I DRM V DRM, vj = 125 C 200 ma Reverse leakage current I RRM V RRM, vj = 125 C 200 ma Note 1: Voltage de-rating factor of 0.11% per C is applicable for vj below +5 C Mechanical data Mounting force F M 14 22 24 kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 0.6 kg Housing thickness H F M = 22 kn, a = 25 C 25.9 26.3 mm Surface creepage distance D S 25 mm Air strike distance D a 14 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
5SP 16F2800 On-state Average on-state current I (AV)M Half sine wave, c = 70 C 1400 A RMS on-state current I (RMS) 2210 A Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current I SM t p = 10 ms, vj = 125 C, sine wave 18 10 3 A after surge: V D = V R = 0 V I 2 t 1.62 10 6 A 2 s I SM t p = 8.3 ms, vj = 125 C, sine wave 19 10 3 A after surge: V D = V R = 0 V Limiting load integral I 2 t 1.5 10 6 A 2 s On-state voltage V I = 2000 A, vj = 125 C 1.55 V hreshold voltage V (0) I = 800 A - 2400 A, vj = 125 C 0.82 V Slope resistance r 0.37 m Holding current I H vj = 25 C 75 ma vj = 125 C 60 ma Latching current I L vj = 25 C 500 ma vj = 125 C 200 ma Switching Critical rate of rise of onstate current Critical rate of rise of onstate current Circuit-commutated turn-off time di/dt crit di/dt crit vj = 125 C, I RM = 2000 A, V D 1880 V, I FG = 2 A, t r = 0.5 µs Cont. f = 50 Hz Cont. f = 1Hz t q vj = 125 C, I RM = 2000 A, V R = 200 V, di /dt = -1.5 A/µs, V D 0.67 V DRM, dv D /dt = 20 V/µs 150 A/µs 1000 A/µs 800 µs Reverse recovery charge Q rr vj = 125 C, I RM = 2000 A, 780 2000 µas Reverse recovery current I RM V R = 200 V, di /dt = -1.5 A/µs 30 55 A Gate turn-on delay time t gd vj = 25 C, V D = 0.4 V RM, I FG = 2 A, t r = 0.5 µs 3 µs Doc. No. 5SYA1022-04 May 12 page 2 of 7
5SP 16F2800 riggering Peak forward gate voltage V FGM 12 V Peak forward gate current I FGM 10 A Peak reverse gate voltage V RGM 10 V Average gate power loss P G(AV) see Fig. 9 W Gate-trigger voltage V G vj = 25 C 2.6 V Gate-trigger current I G vj = 25 C 400 ma Gate non-trigger voltage V GD V D = 0.4 x V DRM, vjmax = 125 C 0.3 V Gate non-trigger current I GD V D = 0.4 x V DRM, vjmax = 125 C 10 ma hermal Operating junction temperature range vj 125 C Storage temperature range stg -40 140 C hermal resistance junction to case hermal resistance case to heatsink R th(j-c) Double-side cooled R th(j-c)a Anode-side cooled R th(j-c)c Cathode-side cooled R th(c-h) R th(c-h) Double-side cooled Single-side cooled 17 K/kW 33 K/kW 35 K/kW 4 K/kW 8 K/kW Analytical function for transient thermal impedance: Z th(j-c) (t) = n i 1 R (1- e i 1 2 3 4 R i (K/kW) 10.350 3.760 2.290 0.670 i (s) 0.3723 0.0525 0.0057 0.0023 i -t/ i ) Fig. 1 ransient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA1022-04 May 12 page 3 of 7
5SP 16F2800 Fig. 2 On-state voltage characteristics Fig. 3 On-state characteristics, j = 125 C, 10ms half sine Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored Doc. No. 5SYA1022-04 May 12 page 4 of 7
5SP 16F2800 Fig. 6 Surge on-state current vs. pulse length, half-sine wave Fig. 7 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz I G (t) I GM 2..5 A 100 % 90 % I GM I Gon di G /dt t r t p (I GM ) 1.5 I G 2 A/ s 1 s 5...20 s di G /dt I Gon 10 % t r tp (IGM ) t p (I Gon ) t Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss Fig. 10 Reverse recovery charge vs. decay rate of on-state current Fig. 11 Peak reverse recovery current vs. decay rate of on-state current Doc. No. 5SYA1022-04 May 12 page 5 of 7
5SP 16F2800 urn-on and urn-off losses Fig. 12 urn-on energy, half sinusoidal waves Fig. 13 urn-on energy, rectangular waves Fig. 14 urn-off energy, half sinusoidal waves Fig. 15 urn-off energy, rectangular waves -di /dt I (t) I (t), V(t) otal power loss for repetitive waveforms: P O where P W on f W off f Q rr -I RRM V(t) t -V 0 P 1 I V 0 ( I ) dt -dv/dt com -V RRM Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss Doc. No. 5SYA1022-04 May 12 page 6 of 7
5SP 16F2800 H Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubber for Phase Control Applications 5SYA 2049 Voltage definitions for phase control thyristors and diodes 5SYA 2051 Voltage ratings of high power semiconductors 5SYA 2034 Gate-Drive Recommendations for PC's 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SZK 9104 5SZK 9105 Specification of environmental class for pressure contact diodes, PCs and GO, SORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCs and GO, RANSPORAION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA1022-04 May 12 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors