IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKP4N65F5,IKW4N65F5 65VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl
IKW4N65F5, IKP4N65F5 High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID fast and soft anti parallel diode Features and Benefits: C High speed F5 technology offering BestinClass efficiency in hard switching and resonant topologies 65V breakdown voltage Low Qg IGBT copacked with RAPID fast and soft antiparallel diode Maximum junction temperature C Qualified according to JEDEC for target applicatio Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ G E C G C E G C E Applicatio: Solar converters Uninterruptible power supplies Welding converters Mid to high range switching frequency converters Package pin definition: Pin gate Pin 2 & backside collector Pin 3 emitter Key Performance and Package Parameters Type VCE IC VCEsat, Tvj= C Tvjmax Marking Package IKW4N65F5 65V 4A.6V C K4EF5 PGTO2473 IKP4N65F5 65V 4A.6V C K4EF5 PGTO223 2 Rev..2, 2328
IKW4N65F5, IKP4N65F5 Table of Contents Description........................................................................ 2 Table of Contents................................................................... 3 Maximum ratings.................................................................... 4 Thermal Resistance................................................................. 4 Electrical Characteristics.............................................................. 5 Electrical Characteristics diagrams...................................................... 8 Package Drawing PGTO247pinGCE...................................................5 Package Drawing PGTO223........................................................6 Testing Conditio..................................................................7 Revision History....................................................................8 Disclaimer.........................................................................8 3 Rev..2, 2328
IKW4N65F5, IKP4N65F5 Maximum ratings Parameter Symbol Value Unit Collectoremitter voltage VCE 65 V DC collector current, limited by Tvjmax TC = C TC = C IC 74. 46. A Pulsed collector current, tp limited by Tvjmax ICpuls 2. A Turn off safe operating area VCE 65V, Tvj C 2. A Diode forward current, limited by Tvjmax TC = C TC = C IF 36. 2. A Diode pulsed current, tp limited by Tvjmax IFpuls 2. A Gateemitter voltage Traient Gateemitter voltage (tp µs, D <.) VGE ±2 ±3 V Power dissipation TC = C Power dissipation TC = C Ptot 5. 2. W Operating junction temperature Tvj 4...+ C Storage temperature Tstg 55...+5 C PGTO247pinGCE PGTO223 26 26 C M.6 Nm Soldering temperature, wave soldering.6 mm (.63 in.) from case for s Mounting torque, M3 screw Maximum of mounting processes: 3 Thermal Resistance Parameter Characteristic Symbol Conditio Max. Value Unit IGBT thermal resistance, junction case Rth(jc).6 K/W Diode thermal resistance, junction case Rth(jc).8 K/W Thermal resistance junction ambient Rth(ja) 4 62 K/W PGTO247pinGCE PGTO223 4 Rev..2, 2328
IKW4N65F5, IKP4N65F5 Electrical Characteristic, at Tvj = C, unless otherwise specified Parameter Symbol Conditio Value min. typ. max. 65 VGE = 5.V, IC = 4.A Tvj = C Tvj = C Tvj = C.6.8.9 2..45.4.4.8 3.2 4. 4.8 Unit Static Characteristic Collectoremitter breakdown voltage V(BR)CES VGE = V, IC =.2mA Collectoremitter saturation voltage VCEsat V V Diode forward voltage VF VGE = V, IF = 2.A Tvj = C Tvj = C Tvj = C Gateemitter threshold voltage VGE(th) IC =.4mA, VCE = VGE Zero gate voltage collector current ICES VCE = 65V, VGE = V Tvj = C Tvj = C Gateemitter leakage current IGES VCE = V, VGE = 2V na Traconductance gfs VCE = 2V, IC = 4.A 5. S V V 4. µa 4. Electrical Characteristic, at Tvj = C, unless otherwise specified Parameter Symbol Conditio Value Unit min. typ. max. 5 9 95. nc nh Dynamic Characteristic Input capacitance Cies Output capacitance Coes Reverse trafer capacitance Cres Gate charge QG VCC = 52V, IC = 4.A, VGE = 5V Internal emitter inductance measured 5mm (.97 in.) from case LE PGTO247pinGCE PGTO223 VCE = V, VGE = V, f = MHz 3. pf Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max. 9 3 6 6.36..46 IGBT Characteristic, at Tvj = C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = C, VCC = 4V, IC = 2.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. 5 Rev..2, 2328
IKW4N65F5, IKP4N65F5 Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = C, VCC = 4V, IC = 5.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. 2 4.7.3. 6.45 µc 2.4 A 28 A/µs 33.22 µc.6 A 3 A/µs Diode Characteristic, at Tvj = C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = C, VR = 4V, IF = 2.A, dif/dt = A/µs Tvj = C, VR = 4V, IF = 5.A, dif/dt = A/µs dirr/dt Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max. 2 4 85 5.5.6.66 8 5 22 2.4.5.9 IGBT Characteristic, at Tvj = 5 C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = 5 C, VCC = 4V, IC = 2.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. Tvj = 5 C, VCC = 4V, IC = 5.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. 6 Rev..2, 2328
IKW4N65F5, IKP4N65F5 Diode Characteristic, at Tvj = 5 C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = 5 C, VR = 4V, IF = 2.A, dif/dt = A/µs Tvj = 5 C, VR = 4V, IF = 5.A, dif/dt = A/µs dirr/dt 7 85. µc 7. A 22 A/µs 5.5 µc 4. A 5 A/µs Rev..2, 2328
IKW4N65F5, IKP4N65F5 2 Ptot, POWER DISSIPATION [W] IC, COLLECTOR CURRENT [A] 2 tp=µs µs 5µs µs 2µs 2 5 5µs 5 DC. VCE, COLLECTOREMITTER VOLTAGE [V] 5 5 TC, CASE TEMPERATURE [ C] Figure. Forward bias safe operating area (D=, TC= C, Tvj C; VGE=5V. Recommended use at VGE 7.5V) Figure 2. Power dissipation as a function of case temperature (Tvj C) 8 2 7 VGE=2V 6 IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 5 4 3 2 8V 8 5V 2V 6 V 8V 7V 4 6V 5V 2 5 5 TC, CASE TEMPERATURE [ C] 2 3 4 5 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 3. Collector current as a function of case temperature (VGE 5V, Tvj C) Figure 4. Typical output characteristic (Tvj= C) 8 Rev..2, 2328
IKW4N65F5, IKP4N65F5 2 2 Tj= C Tj=5 C IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] VGE=2V 8V 8 5V 2V 6 V 8V 7V 4 6V 8 6 4 5V 2 2 2 3 4 5 4.5 VCE, COLLECTOREMITTER VOLTAGE [V] 5.5 6. 6.5 7. 7.5 8. 8.5 VGE, GATEEMITTER VOLTAGE [V] Figure 5. Typical output characteristic (Tvj=5 C) Figure 6. Typical trafer characteristic (VCE=2V) 2.5 IC=A IC=2A IC=4A 2. td(off) tf td(on) tr 2. t, SWITCHING TIMES [] VCEsat, COLLECTOREMITTER SATURATION [V] 5...5....5 5 5 Tvj, JUNCTION TEMPERATURE [ C] 2 4 6 8 2 IC, COLLECTOR CURRENT [A] Figure 7. Typical collectoremitter saturation voltage as Figure 8. Typical switching times as a function of a function of junction temperature collector current (VGE=5V) (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, rg=5ω, Dynamic test circuit in Figure E) 9 Rev..2, 2328
IKW4N65F5, IKP4N65F5 td(off) tf td(on) tr t, SWITCHING TIMES [] t, SWITCHING TIMES [] td(off) tf td(on) tr 5 5 35 45 55 65 85 rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of gate resistor (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, IC=2A,Dynamic test circuit in Figure E) 5 8 typ. min. max. 5. Eoff Eon Ets 7 E, SWITCHING ENERGY LOSSES [] VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] Figure. Typical switching times as a function of junction temperature (inductive load, VCE=4V, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E) 5.5 4.5 4. 3.5 3. 2.5 2. 6 5 4 3 2.5. 5 Tvj, JUNCTION TEMPERATURE [ C] 5 5 Tvj, JUNCTION TEMPERATURE [ C] 2 4 6 8 2 IC, COLLECTOR CURRENT [A] Figure. Gateemitter threshold voltage as a function of junction temperature (IC=.4mA) Figure 2. Typical switching energy losses as a function of collector current (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, rg=5ω,dynamic test circuit in Figure E) Rev..2, 2328
IKW4N65F5, IKP4N65F5.6.8 Eoff Eon Ets.7 E, SWITCHING ENERGY LOSSES [] E, SWITCHING ENERGY LOSSES [].4.2..8.6.4.2. Eoff Eon Ets.6.5.4.3.2. 5 5 35 45 55 65. 85 rg, GATE RESISTOR [Ω] Figure 3. Typical switching energy losses as a function of gate resistor (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, IC=2A, Dynamic test circuit in Figure E) 5 3V 52V 4 VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [] 6 Eoff Eon Ets.8.7.6.5.4.3.2 2 8 6 4 2.. 2 Figure 4. Typical switching energy losses as a function of junction temperature (inductive load, VCE=4V, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E)..9 5 Tvj, JUNCTION TEMPERATURE [ C] 3 35 4 45 5 VCE, COLLECTOREMITTER VOLTAGE [V] Figure 5. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj=5 C, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E) 2 4 6 8 QGE, GATE CHARGE [nc] Figure 6. Typical gate charge (IC=4A) Rev..2, 2328
IKW4N65F5, IKP4N65F5 E+4 Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Ciss Coss Crss C, CAPACITANCE [pf] 5 5 2 D=.5.2.5.2. single pulse. i: 2 3 4 ri[k/w]:.8245484.4497.774.5878 τi[s]: 7.3E5 7.E4.235548.8288. E6 3.. E5 VCE, COLLECTOREMITTER VOLTAGE [V] E4... tp, PULSE WIDTH [s] Figure 7. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) Figure 8. IGBT traient thermal resistance (D=tp/T) D=.5.2..5..2. single pulse.. E7 Tj= C, IF = 2A Tj=5 C, IF = 2A 2 trr, REVERSE RECOVERY TIME [] Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] 3 9 8 7 6 5 i: 2 3 ri[k/w]:.684.79.354826 τi[s]: 3.4E4 4.7E3.4689 E6 E5 E4... 4 5 tp, PULSE WIDTH [s] 7 9 3 5 dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 9. Diode traient thermal impedance as a function of pulse width (D=tp/T) Figure 2. Typical reverse recovery time as a function of diode current slope (VR=4V) 2 Rev..2, 2328
IKW4N65F5, IKP4N65F5.2 2 Tj= C, IF = 2A Tj=5 C, IF = 2A Tj= C, IF = 2A Tj=5 C, IF = 2A 9 Irr, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] 8..8.6.4 7 6 5 4 3 2 9 8 7 6.2 5 7 9 3 5 5 5 7 9 3 dif/dt, DIODE CURRENT SLOPE [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery charge as a function of diode current slope (VR=4V) Figure 22. Typical reverse recovery current as a function of diode current slope (VR=4V) 5 6 Tj= C, IF = 2A Tj=5 C, IF = 2A Tj= C Tj=5 C 5 IF, FORWARD CURRENT [A] dirr/dt, diode peak rate of fall of Irr [A/µs] 5 5 2 3 4 3 2 35 4 5 7 9 3 5 dif/dt, DIODE CURRENT SLOPE [A/µs]..5..5 2. 2.5 3. VF, FORWARD VOLTAGE [V] Figure 23. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) Figure 24. Typical diode forward current as a function of forward voltage 3 Rev..2, 2328
IKW4N65F5, IKP4N65F5 2. IF=A IF=2A IF=4A VF, FORWARD VOLTAGE [V].8.6.4.2..8 5 5 Tvj, JUNCTION TEMPERATURE [ C] Figure. Typical diode forward voltage as a function of junction temperature 4 Rev..2, 2328
IKW4N65F5, IKP4N65F5 PGTO2473 5 Rev..2, 2328
IKW4N65F5, IKP4N65F5 PGTO223 6 Rev..2, 2328
IKW4N65F5, IKP4N65F5 a a b b t 7 Rev..2, 2328
IKW4N65F5, IKP4N65F5 Revision History IKW4N65F5, IKP4N65F5 Revision: 2328, Rev..2 Previous Revision Revision Date Subjects (major changes since last revision). 229 Preliminary data sheet.2 2328 New Marking Pattern We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 8726 Munich, Germany 8726 München, Germany 23 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditio or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditio and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applicatio or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other perso may be endangered. 8 Rev..2, 2328