Ordering number : EN6648B LP1SS P-Channel Small Signal MOSFET V,.1A, 1.4Ω, Single SSFP http://onsemi.com Features Low ON-resistance High-speed switching.v drive Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -- V Gate-to-Source Voltage VGSS ±1 V Drain Current (DC) ID --.1 A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% --.4 A Allowable Power Dissipation PD.1 W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C This product is designed to ESD immunity < V*, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 9A- Product & Package Information Package : SSFP JEITA, JEDEC : SC-81 Minimum Packing Quantity : 8, pcs./reel 1.4..8..4 1 1.4...1 to. LP1SS-TL-E LP1SS-TL-H Packing Type: TL TL Marking LOT No. XA LOT No..6 Electrical Connection. 1 1 : Gate : Source : Drain. SSFP 1 Semiconductor Components Industries, LLC, 1 July, 1 61 TKIM/46PE MSIM TB-16/9 TSIM TA-1981 No.6648-1/
LP1SS Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID= --1mA, VGS=V -- V Zero-Gate Voltage Drain Current IDSS VDS= --V, VGS=V --1 μa Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS= --1V, ID= --1μA --.4 --1.4 V Forward Transfer Admittance yfs VDS= --1V, ID= --ma 8 11 ms RDS(on)1 ID= --ma, VGS= --4V 8 1.4 Ω On-State Resistance RDS(on) ID= --ma, VGS= --.V 11 1.4 Ω RDS(on) ID= --1mA, VGS= --1.V 4 Ω Input Capacitance Ciss. pf Output Capacitance Coss VDS= --1V, f=1mhz. pf Reverse Transfer Capacitance Crss 1.8 pf Turn-ON Delay Time td(on) 4 ns Rise Time tr ns See specified Test Circuit. Turn-OFF Delay Time td(off) 1 ns Fall Time tf 1 ns Total Gate Charge Qg 1.4 nc Gate-to-Source Charge Qgs VDS= --1V, VGS= --1V, ID= --1mA.18 nc Gate-to-Drain Miller Charge Qgd. nc Diode Forward Voltage VSD IS= --1mA, VGS=V --.8 --1. V Switching Time Test Circuit VIN V --4V PW=1μs D.C. 1% VIN VDD= --1V D ID= --ma RL=Ω VOUT G P.G Ω S LP1SS Ordering Information Device Package Shipping memo LP1SS-TL-E SSFP 8,pcs./reel Pb Free LP1SS-TL-H SSFP 8,pcs./reel Pb Free and Halogen Free No.6648-/
LP1SS --.1 --.9 --.8 --. --.6 --. --.4 --. --. --.V --6.V --4.V ID -- VDS --.V --.V --.V V GS = --1.V --. --.18 --.16 --.14 --.1 --.1 --.8 --.6 --.4 V DS = --1V ID -- VGS C Ta= -- C C --.1 --. --. --.4 --.6 --.8 --1. --1. --1.4 --1.6 --1.8 --. Drain-to-Source Voltage, V DS -- V IT RDS(on) -- VGS Ta= C --. --1. --1. --. --. --. --. --4. Gate-to-Source Voltage, V GS -- V IT8 1 RDS(on) -- ID V GS = --4V 1 1 I D = --ma --ma 1 Ta= C -- C C 1 --1 -- -- --4 -- --6 -- --8 --9 --1 Gate-to-Source Voltage, V GS -- V IT9 RDS(on) -- ID V GS = --.V 1. --.1 1 --.1 IT8 RDS(on) -- ID V GS = --1.V 1 Ta= C -- C C 1 Ta= C -- C C 1. --.1 18 16 14 1 1 8 6 4 RDS(on) -- Ta I D = --ma, V GS = --.V --.1 ID = --ma, V GS= --4.V IT81 Forward Transfer Admittance, yfs -- S 1 --.1 --1. 1..1 Drain Current, I D -- ma yfs -- ID Ta= -- C C IT8 V DS = --1V C --6 --4 -- 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT8.1 --.1 --.1 IT84 No.6648-/
LP1SS Source Current, I S -- A --.1 Ta= C C IS -- VSD -- C V GS =V Switching Time, SW Time -- ns 1 1 SW Time -- ID t f t d (off) t r t d (on) V DD = --1V V GS = --4V Ciss, Coss, Crss -- pf --.1 --. --.6 --. --.8 --.9 --1. --1.1 Diode Forward Voltage, V SD -- V IT8 Ciss, Coss, Crss -- VDS 1 f=1mhz 1 Ciss Coss Crss Gate-to-Sourse Voltage, V GS -- V 1 --.1 --1 VDS = --1V --9 I D = --.1A --8 -- --6 -- --4 -- -- --1 VGS -- Qg --.1 IT86 1.. -- --1 --1 -- -- -- Drain-to-Source Voltage, V DS -- V IT8 PD -- Ta..4.6.8 1. 1. 1.4 1.6 Total Gate Charge, Qg -- nc IT88 Allowable Power Dissipation, P D -- W.1.1. 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT81 No.6648-4/
LP1SS Embossed Taping Specification LP1SS-TL-E, LP1SS-TL-H No.6648-/
LP1SS Outline Drawing LP1SS-TL-E, LP1SS-TL-H Land Pattern Example Mass (g) Unit.18 * For reference mm Unit: mm. 1...4.4.4.4 No.6648-6/
LP1SS Note on usage : Since the LP1SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.6648-/