Single-Supply High-Operating voltage Dual Operational Amplifier GENERAL DESCRIPTION The NJM2718 is a single-supply high-operating voltage dual operational amplifier. It is suitable for high supply voltage applications. Large-capacitance drive capability is better or equal than competing products. FEATURES Single Supply Operating Voltage Offset Voltage Large Capacitance Drive Capability Voltage Slew Rate Bipolar Technology Package Outline 3V~36V 4mV max. 1pF typ. V OH +13.V, V OL -14.V ( at V + /V - = ±1V, R L =2kΩ) V OH +3.7V, V OL.3V ( at V + =+V, R L =2kΩ) 3.V/µs typ. ( at Vin = 1Vpp, R L =2kΩ) 9V/µs typ. ( at Vin = 2Vpp, R L =2kΩ) SOP8 JEDEC 1mil, SSOP8 PACKAGE OUTLINE NJM2718E (SOP8) NJM2718V (SSOP8) APPLICATION Low-Side Current Sense PWM Motor Control System Power Supply Module Line Driver, ADC/DAC Buffer PIN CONFIGURATION ( Top View ) A OUTPUT 1 8 V + A -INPUT 2 - + 7 B OUTPUT A +INPUT 3 + - 6 B -INPUT V - 4 B +INPUT SOP8 [NJM2718E] SSOP8 [NJM2718V] Ver.211-12-12-1 -
ABSOLUTE MAXIMUM RATINGS (Ta=2 C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V + +4 V Common Mode Voltage Range V ICM V - -.3V to V + +.3V V Differential Voltage Range V ID ±4 V Voltage V O V - -.3V to V + +.3V (Note1) V Sink/Source Current for Each one Terminal I OPORT ±8 (Note3) ma Flow in Current for V + terminal I IV+ 9 (Note3) ma Flow out Current for V - terminal I OV- 9 (Note3) ma 3 [SOP8], 2[SSOP8] mw Power Dissipation P D [SOP8] (Note2) mw 3[SSOP8] (Note2) mw Operating Temperature Range T opr -4 to +8 C Storage Temperature Range T stg - to +12 C (Note 1) The output voltage of normal operation will be the Voltage Swing of electrical characteristics. (Note 2) On the PCB " EIA/JEDEC (76.2x114.3x1.6mm, two layers, FR-4) " (Note 3) Do not exceed "Power dissipation: PD" in which power dissipation in IC is shown by the absolute maximum rating. Refer to following Figure 1 for a permissible loss when ambient temperature (Ta) is Ta 2 o C. 4 (2) Package Type (1)EMP8 : ΔP D = -3.(mW/ C) (2)EMP8[Tw o Layer] : ΔP D = -.(mw/ C) (3)SSOP8 : ΔPD= -2.(mW/ C) (4)SSOP8[Tw o Layer] : ΔPD= -3.(mW/ C) Power Dissipation P D (mw) 3 2 (4) (1) (3) 1 2 7 1 Ambient Temperature Ta ( C) Figure1: Power Dissipation Ambient Temperature OPERATING VOLTAGE (Ta=2 C) Supply Voltage V + (Note3) +3 - +36 V - 2 - Ver.211-12-12
ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS (V + /V =±1V, Ta=2 C) Supply Current Icc No Signal - 3.7.3 ma Offset Voltage V IO Rs=Ω - 1 4 mv Offset Voltage Drift ΔVio/ΔT Rs=Ω - 1 - µv/deg Bias Current I B Rs=Ω - 1.2 4 µa Offset Current I IO Rs=Ω -.1 1.8 µa Voltage Gain Av R L 2kΩ, Vo=±1V, Rs=Ω 88 1 - db Common Mode Rejection Ratio CMR -1V V ICM +13V, Rs=Ω 7 83 - db Supply Voltage Rejection Ratio SVR ±V V + /V - ±18V, Rs=Ω 7 1 - db Maximum Voltage 1 V OH 1 R L =1kΩ to V +13.7 +14 - V V OL 1 R L =1kΩ to V - -14.6-14.2 V Maximum Voltage 2 V OH 2 R L =2kΩ to V +13. +14. - V V OL 2 R L =2kΩ to V - -13.9-13. V Source Current I source Vin+=+1V, Vin-=V, Vo=V 1 3 - ma Sink Current Isink Vin+=V, Vin-=+1V, Vo=V 2 3 - ma Common Mode Voltage V ICM CMR 7dB -1 - +13 V AC CHARACTERISTICS (V + /V =±1V, Ta=2 C) Gain Bandwidth Product GBW f=1khz - 1.8 - MHz Power Band1 Power Band2 Phase Margin Gain Margin PBW1 PBW2 Gv=+1, R L =2kΩ to V, Vo=2Vpp, THD=1% Gv=+1, R L =2kΩ to V, Vo=2Vpp, THD=1% - 8 - khz - 8 - khz φm1 R L =2kΩ to V, C L =pf - 8 - deg φm2 R L =2kΩ to V, C L =3pF - 7 - deg AM1 R L =2kΩ to V, C L =pf - 18 - db AM2 R L =2kΩ to V, C L =3pF - 11 - db Equivalent Noise Voltage V NI Rs=Ω, f=1khz - 24 - nv/ Hz Total Harmonic Distortion THD Gv=+1, R L =2kΩ to V Vo=2Vpp, f=1khz -.3 - % Capacitance ci V ICM =V, f=1mhz, Vinpower=dBm - 4. - pf Channel Separation CT f=2~2khz, R L =2kΩ - 12 - db TRANSIENT CHARACTERISTICS (V + /V =±1V, Ta=2 C) Slew Rate 1 SR1 P SR1 N Vin=1Vpp (-.V to +.V), Gv=+1, R L =2kΩ to V, C L =pf Vin=1Vpp (-.V to +.V), Gv=-1, R L =2kΩ to V, C L =pf - 3. - V/μs - 3. - V/μs Slew Rate 2 SR2 P SR2 N Vin=2Vpp (-1V to +1V), Gv=+1, R L =2kΩ to V, C L =pf Vin=2Vpp (-1V to +1V), Gv=-1, R L =2kΩ to V, C L =pf - 9 - V/μs - 9 - V/μs Settling time(.1%) ts1 Vin=1Vpp, Gv=-1, Rin=1kΩ, -.9 - μs Settling time(.1%) ts2 Rf=1kΩ, Rg=kΩ, C L =47pF - 1.9 - μs Ver.211-12-12-3 -
ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS (V + =+V, V =V, Ta=2 C) Supply Current Icc No Signal - 2.8 3. ma Offset Voltage V IO Rs=Ω - 1 4 mv Offset Voltage Drift ΔVio/ΔT Rs=Ω - 1 - µv/deg Bias Current I B Rs=Ω - 1 4 µa Offset Current I IO Rs=Ω -.1 1.8 µa Voltage Gain Av R L 2kΩ, Vo=V to 3.V, Rs=Ω 8 1 - db Common Mode Rejection Ratio CMR V V ICM 3V, Rs=Ω 6 8 - db Supply Voltage Rejection Ratio SVR ±V V + /V - ±2.V, Rs=Ω 7 8 - db Maximum Voltage 1 V OH 1 R L =2kΩ to V 3.7 4 - V V OL 1 R L =2kΩ to V -.1.2 V Source Current Isource Vin+=+1V, Vin-=V, Vo=+2.V 1 2 - ma Sink Current Isink Vin+=V, Vin-=+1V, Vo=+2.V 2 3 - ma Common Mode Voltage V ICM CMR 6dB - 3 V AC CHARACTERISTICS (V + =+V, V =V, Ta=2 C) Gain Bandwidth Product GBW f=1khz - 1.7 - MHz Power Band1 Phase Margin Gain Margin PBW1 Gv=+1, R L =2kΩ to 2.V, Vo=2Vpp, THD=1% - 6 - khz φm1 R L =2kΩ to 2.V, C L =pf - 7 - deg φm2 R L =2kΩ to 2.V, C L =3pF - 7 - deg AM1 R L =2kΩ to 2.V, C L =pf - 17 - db AM2 R L =2kΩ to 2.V, C L =3pF - 11 - db Equivalent Noise Voltage V NI Rs=Ω, f=1khz - 24 - nv/ Hz Total Harmonic Distortion THD Gv=+1, R L =2kΩ to 2.V, Vo=3Vpp, f=1khz -. - % Capacitance ci Vcm=V, f=1mhz, Vinpower=dBm - - pf Channel Separation CT f=1khz - 11 - db TRANSIENT CHARACTERISTICS (V + =+V, V =V, Ta=2 C) Slew Rate 1 SR1 P SR1 N Vin=1Vpp (+2V to +3V), Gv=+1, R L =2kΩ to V, C L =pf Vin=1Vpp (+2V to +3V), Gv=-1, R L =2kΩ to V, C L =pf - 3 - V/μs - 2. - V/μs Settling time(.1%) ts1 Vin=1Vpp, Gv=-1, Rin=1kΩ, Rf=1kΩ, - - μs Settling time(.1%) ts2 Rg=kΩ, C L =47pF - 3 - μs - 4 - Ver.211-12-12
Supply Current [ma]. 4. 4. 3. 3. 2. 2... Supply Current vs. Supply Voltage V IN =, R S =Ω Ta=-4ºC Ta=8ºC Ta=+2ºC 1 1 2 Supply Voltage [±V] Supply Current [ma]. 4. 4. 3. 3. 2. 2... Supply Current vs. Temperature (supply Voltage) V IN =, R S =Ω V + /V - =±1V V + /V - =±2.V V + /V - =+2./-.V - -2 2 7 1 12 Offset Voltage [mv]. 4. 3. 2.. - -2. -3. -4. -. Offset Voltage vs. Temperature V + /V - =±1V, V ICM =V, n=3 MIN =.26uV/ºC MAX=9.42uV/ºC AVE=3.8uV/ºC - -2 2 7 1 12 Offset Voltage [mv]. 4. 3. 2.. - -2. -3. -4. -. Offset Voltage vs. Temperature V + /V - =±2.V, V ICM =V, n=3 MIN =1.12uV/ºC MAX=9.93uV/ºC AVE=4.39uV/ºC - -2 2 7 1 12 Bias Current [μa] Bias Current vs. Temperature (Supply Voltage) V IN =V, R S =Ω 2... -. - - -2. V + /V - =+2./-V V + /V - =±1V V + /V - =±2.V - -2 2 7 1 12 Offset Current [na] Offset Current vs. Temperature (Supply Voltage) V IN =V, R S =Ω 4 3 2 1-1 -2-3 -4 - V + /V - =+2./-V V + /V - =±1V V + /V - =±2.V - -2 2 7 1 12 Ver.211-12-12 - -
Offset Voltage [mv]. 4. 3. 2.. - -2. -3. -4. -. Offset Voltage vs. Common Mode Voltage V + /V - =±1V, R S =Ω Ta=+8ºC Ta=-4ºC Ta=+2ºC -2-1 1 2 Common Mode Voltage [V] Offset Voltage [mv]. 4. 3. 2.. - -2. -3. -4. -. Offset Voltage vs. Common Mode Voltage V + /V - =±2.V, R S =Ω Ta=+8ºC Ta=-4ºC Ta=+2ºC -4-3 -2-1 1 2 Common Mode Voltage [V] Common Mode Rejection Ratio [db] Common Mode Rejection Ratio vs. Temperature (Supply Voltage) R S =Ω 1 9 8 7 6 4 3 2 1 V + /V - =±1V V + /V - =±2.V - -2 2 7 1 12 Supply Voltage Rejection Ratio [db] 12 1 8 6 4 2 Supply Voltage Rejection Ratio vs. Temperature V + /V - =±V to ±18V, R S =Ω - -2 2 7 1 12 12 Voltage Gain vs. Temperature (Supply Voltage) R S =Ω, R L =2kΩ 1 Voltage Gain [db] 8 6 4 V + /V - =±2.V V + /V - =±1V 2 - -2 2 7 1 12-6 - Ver.211-12-12
3 Maximum Voltage vs. Frequency V + /V - =±1V, A V =+1, THD 1%, R L =2k, Ta=2ºC THD 1% 3. Maximum Voltage vs. Frequency V + /V - =±2.V, A V =+1, THD 1%, R L =2k, Ta=2ºC THD 1% Maximum Voltage [Vpp] 2 2 1 1 Maximum Voltage [Vpp] 2. 2.. 1 M M 1k 1k M 1k M 1M 1M. 1 M M 1k 1k M 1k M 1M 1M 1 Maximum Voltage vs. Load Resistance V + /V - =±1V, R L to V. Maximum Voltage vs. Load Resistance V + =V, R L to V Maximum Voltage [V] 1 - -1 Ta=2ºC Ta=-4ºC Ta=8ºC Maximum Voltage [V] 4. 3. 2. Ta=8ºC Ta=2ºC Ta=-4ºC -1 k 1 1 k 1k 1k 1k Load Resistance [Ω]. k 1 1 k 1k 1k 1k Load Resistance [Ω] Maximum Voltage [V] 1 1 - -1-1 Maximum Voltage vs. Current V + /V-=±1V, =+1/-1V Ta=8ºC Ta=2ºC Ta=-4ºC.1 1 1 1 Current [ma] Maximum Voltage [V] 2. 2... -. - - -2. -2. Maximum Voltage vs. Current V + /V-=±2.V, =+1/-1V Ta=-4ºC Ta=2ºC Ta=8ºC.1 1 1 1 Current [ma] Ver.211-12-12-7 -
4dB Gain/Phase vs. Frequency (Load Capacitance) V + /V - =±1V, V IN =-2dBm, R G =2Ω, R F =2kΩ, R L =2kΩ to V, Ta=2ºC 4dB gain/phase vs. Frequency (Load Capacitance) V + /V - =±2.V, V IN =-2dBm, R G =2Ω, R F =2kΩ, R L =2kΩ to V, Ta=2ºC 4 3 Gain 4 3 Gain Voltage gain [db] 2 1-1 Phase C L =pf -4 Phase [deg] Voltage Gain [db] 2 1-1 Phase C L =pf -4 Phase [deg] -2-9 -2-9 -3 C L =3pF -13 C L =1pF -4-18 1 M M 1k 1k M 1k M 1M 1M -3 C L =3pF -13 C L =1pF -4-18 1 M M 1k 1k M 1k M 1M 1M 1 THD vs. Voltage (Frequency) V + /V - =±1V, V IN =2Vpp, A V =2dB, V O =2Vpp, R1=1kΩ, R2=9kΩ, R G =1kΩ, R L =2kΩ, BW=1~kHz, Ta=2ºC 1 THD vs. Voltage (Frequency) V + /V - =±2.V, Z IN =4Ω, A V =2dB, V O =3Vpp, R1=1kΩ, R2=9kΩ, R G =1kΩ, R L =2kΩ, BW=1~kHz, Ta=2ºC Total Harmonic Distortion THD [%] 1 1.1.1.1 f=1khz f=2hz f=1khz.1.1 1 1 1 Voltage [Vpp] Total Harmonic Distortion THD [%] 1 1.1.1.1 f=1khz f=2hz f=1khz.1.1 1 1 Voltage [Vpp] -4 Channel Separation vs. Frequency V + /V - =±1V, V IN =2mVpp, Z IN =2Ω, A V =4dB, V O =2Vpp, R1=1kΩ, R2=1kΩ, R G =1k, R L =2kΩ, BW=1~kHz -4 Channel Separation vs. Frequency V + /V - =±2.V, V IN =2mVpp, Z IN =2Ω, A V =4dB, V O =2Vpp, R1=1kΩ, R2=1kΩ, R G =1k, R L =2kΩ, BW=1~kHz Channel Separation [db] -6-8 -1-12 -14 CH_A B CH_B A Channel Separation [db] -6-8 -1-12 -14 CH_B A CH_A B -16 k 1 1 k 1k 1k 1k 1k 1M -16 k 1 1 k 1k 1k 1k 1k 1M - 8 - Ver.211-12-12
Frequency Response (V IN =1Vpp, Load Capacitance) V + /V - =±1V, V IN =1Vpp, f=1khz, A V =+1, R L =2kΩ to V, Ta=2ºC 3. Frequency Response (V IN =1Vpp, Temperature) V + /V - =±1V, V IN =1Vp-p, f=1khz, A V =+1, R L =2kΩ to V, C L =pf 3. Voltage [V].. -. 2. 2. Voltage [V].. -. 2. 2. - - -2. -2. -3. C L =1pF C L =pf C L =pf -1 1 2 3 4 6 7 8 Time [μs].. -. - Voltage [V] - - -2. -2. -3. Ta=8ºC Ta=-4ºC Ta=2ºC -1 1 2 3 4 6 7 8 Time [μs].. -. - output Voltage [V] Frequency Response (V IN =2Vpp, Load Capacitance) V + /V - =±1V, V IN =2Vpp, f=1khz, A V =+1, R L =2kΩ to V, Ta=2ºC, 1 4 1 Frequency Response (V IN =2Vpp, Temperature) V + /V - =±1V, V IN =2Vpp, f=1khz, A V =+1, R L =2kΩ to V, C L =pf 4 Voltage [V] 1 - -1-1 -2-2 -3-3 -4-4 C L =pf C L =pf C L =1pF -1 1 2 3 4 6 7 8 Time [μs] 4 3 3 2 2 1 1 - -1-1 Voltage [V] Voltage [V] 1 - -1-1 -2-2 -3-3 -4-4 Ta=-4ºC Ta=2ºC Ta=8 ºC -1 1 2 3 4 6 7 8 Time [μs] 4 3 3 2 2 1 1 - -1-1 Voltage [V] Frequency Response (V IN =1Vpp, Load Capacitance) V + /V - =±2.V, V IN =1Vpp, f=1khz, A V =+1, R L =2kΩ to V, Ta=2ºC 3. Frequency Response (V IN =1Vpp, Temperature) V + /V - =±2.V, V IN =1Vpp, f=1khz, A V =+1, R L =2kΩ to V, C L =pf 3. Voltage [V].. -. - - -2. -2. -3. C L =1pF C L =pf C L =pf -1 1 2 3 4 6 7 8 Time [us] 2. 2... -. - Voltage [V] Voltage [V].. -. - - -2. -2. -3. Ta=8ºC Ta=-4ºC Ta=2ºC -1 1 2 3 4 6 7 8 Time [μs] 2. 2... -. - Voltage [V] Ver.211-12-12-9 -
Equivalent Noise Voltage [nv/ Hz] 2 18 16 14 12 1 8 6 4 2 Equivalent Noise Voltage vs. Frequency V + /V - =±1V, V IN =V, A V =4dB, R G =2Ω, R F =2kΩ, Ta=2ºC k 1 k 1 1 k 1k 1k Equivalent Noise Voltage [nv/ Hz] 2 18 16 14 12 1 8 6 4 2 Equivalent Noise Voltage vs. Frequency V + /V - =±2.V, V IN =V, A V =4dB, R G =2Ω, R F =2kΩ, Ta=2ºC k 1 k 1 1 k 1k 1k TEST CIRCUIT V + V + 1kΩ 1kΩ V OUT V OUT 2kΩ pf 2kΩ pf V - V - Fig.2.1 Slew Rate (Non Inverting) Fig.2.2 Slew Rate (Inverting) V + signal Generator R IN R F V OUT Ω C L V - Fig.2.3 Settling Time [CAUTION] The specifications on this data book are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this data book are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 1 - Ver.211-12-12