NJM8512/NJM8513. Precision, JFET Input Operational Amplifier

Transcription

1 Precision, JFET Input Operational Amplifier NJM8512/NJM8513 FEATURES Low Input Offset Voltage V IO =4μV max. V IO =7μV max. (Ta= -4 C to +125 C) Low Input Offset Voltage Drift ΔV IO /ΔT=5μV/ C max. (Ta= -4 C to +125 C) Low Supply Current Icc=1.3mA /ch typ. High Slew Rate SR=2V/μs typ. Wide Bandwidth ft=7mhz typ. Low Noise en=1nv/ Hz typ. (at f=1khz ) Low Input Bias Current I B =8pA max. (at Ta=25 C) No Phase Reversal RF noise Immunity Guaranteed Temperature Topr= -4 C to +125 C Operating Voltage Vopr=±4.5V to ±16V Package NJM8512 NJM8513 MSOP8 (VSP8) meet JEDEC MO-187-DA SOP8 JEDEC 15 mil SSOP14 GENERAL DESCRIPTION The NJM8512/NJM8513 are Dual/Quad high precision JFET input operational amplifier featuring low offset, low offset drift,low bias current, high slew rate, low noise and wide operating temperature range. The precision performance, high speed and low noise make the NJM8512/NJM8513 especially suitable for filter and amplification of high speed and small signal in instruments, automated test equipment, sensors and other precision applications. APPLICATIONS Current Sensor Photodiode Amplification Reference Voltage Circuit Automatic Test Equipment ELECTRICAL CHARACTERISTICS 8 Input Offset Voltage vs. Temperature V + /V - =±15V, V ICM =V, N=196 7 Input Offset Voltage Drift Distribution V + /V - =±15V, Ta=-4ºC to 125ºC Input Offset Voltage [μv] Number of Amplifiers N= Temperature [ºC] Input Offset Voltage Drift [μv/ºc] PIN CONFIGURATION Pin Function Package Outline MSOP8 SOP8 SSOP14 PART NUMBER NJM8512AR NJM8512BR NJM8512AE NJM8512BE NJM8513AV NJM8513BV Ver.4-1 -

2 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC, unless otherwise noted.) PARAMETER SYMBOL RATING UNIT Supply Voltage V + /V - ±18 V Differential Input Voltage V ID ±36 (Note1) V Input Voltage V IN V to V + +.3(Note2) V Input Current I IN ±1(Note3) ma Power Dissipation MSOP8 (VSP8) SOP8 SSOP14 Output Short-Circuit Duration P D (2-layer / 4-layer ) 595(Note4) / 85 (Note4) 69 (Note4) / 1 (Note4) 49 (Note4) / 63 (Note4) Infinete(Ta 25 ) (Note4) Operating Temperature Range T opr -4 to +125 ºC Junction Temperature T jmax +15 ºC Storage Temperature Range T stg -65 to +15 ºC (Note1) Differential Input Voltage is the voltage difference between +INPUT and -INPUT. (Note2) The normal operation will establish when any input is within the Common Mode Input Voltage Range of electrical characteristics. (Note3) If the input voltage exceeds the supply voltage,the input current must be limited 1 ma or less by using a restriction resistance. (Note4) 2-layer : EIA/JEDEC STANDARD Test board (76.2 x x 1.6mm, 2layers, FR-4) mounting. 4-layer : EIA/JEDEC STANDARD Test board (76.2 x x 1.6mm, 4layers, FR-4) mounting. See Figure Fig.1-1 : Power Dissipation Curve when ambient temperature is over 25 C. mw Figure1-A: Power Dissipation Derating Curve Figure1-B: Power Dissipation Derating Curve RECOMMENDED OPERATING VOLTAGE (Ta=25ºC) PARAMETER SYMBOL RATING MIN. TYP. MAX. UNIT Supply Voltage V + /V - ±4.5 - ±16 V Ver.4

3 ELECTRICAL CHARACTERISTICS (V + /V - =±15V, Ta=25 C, V ICM =V, unless otherwise noted.) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Input Characteristics Input Offset Voltage NJM8512Bx / NJM8513Bx V IO1-8 4 µv V IO2 Ta = -4ºC to 125ºC µv NJM8512Ax / NJM8513Ax V IO1-8 8 µv V IO2 Ta = -4ºC to 125ºC µv Input Offset Voltage Drift NJM8512Bx / NJM8513Bx ΔVio/ΔT Ta = -4ºC to 125ºC µv/ºc NJM8512Ax / NJM8513Ax ΔVio/ΔT Ta = -4ºC to 125ºC µv/ºc Input Bias Current I B pa I B2 Ta = -4ºC to 125ºC na Input Offset Current I IO pa I IO2 Ta = -4ºC to 125ºC na Common Mode Input Voltage Range V ICM1 CMR 86dB V V ICM2 CMR 8dB, Ta = -4ºC to 125ºC V Common Mode Rejection Ratio CMR1 V CM=-12.5V to +12.5V db CMR2 V CM=-12.5V to +12.5V, Ta = -4ºC to 125ºC db CMR3 V CM=-1V to +1V db Voltage Gain A V1 R L=2kΩ, V O=-13.5V to +13.5V db A V2 R L=2kΩ, V O=-13.5V to +13.5V, Ta = -4ºC to 125ºC db A V3 R L=1kΩ, V O=-13.5V to +13.5V db Input capacitance C IN pf Channel Separation CS DC db Output Characteristics Maximum Output Voltage V OH1 R L=1kΩ, Ta = -4ºC to 125ºC V V OL1 R L=1kΩ, Ta = -4ºC to 125ºC V V OH2 R L=2kΩ, Ta = -4ºC to 125ºC V V OL2 R L=2kΩ, Ta = -4ºC to 125ºC V V OH31 R L=6Ω V V OH32 R L=6Ω, Ta = -4ºC to 125ºC V V OL41 R L=6Ω V V OL42 R L=6Ω, Ta = -4ºC to 125ºC V Supply Characteristics Supply Current (ALL Amps) : NJM8512 I CC1 G V=+1, R L= ma I CC2 G V=+1, R L=, Ta = -4ºC to 125ºC ma Supply Current (ALL Amps) : NJM8513 I CC1 G V=+1, R L= ma I CC2 G V=+1, R L=, Ta = -4ºC to 125ºC ma Supply Voltage Rejection Ratio SVR1 V + / V - = ±4.5V to ±16V db SVR2 V + / V - = ±4.5V to ±16V, Ta = -4ºC to 125ºC db Dynamic Performance Unity Gain Frequency ft G V=+1, R L=2kΩ, C L=1pF MHz Slew Rate +SR RISE, G V=+1, V IN=2Vpp, R L=2kΩ V/µs -SR FALL, G V=+1, V IN=2Vpp, R L=2kΩ V/µs Settling Time ts1 To.1%, V to 1V step, Gv= µs ts2 To.1%, V to 1V step, Gv= µs Phase Margin Φ M deg Total Harmonic Distortion THD fo=1khz, G V=+1, R L=2kΩ % Noise Performance Input Voltage Noise Density V NI fo=.1hz to 1Hz µvpp en1 fo=1hz nv/ Hz en2 fo=1hz nv/ Hz en3 fo=1khz nv/ Hz en4 fo=1khz nv/ Hz (Note) Measurement is to be conducted in pulse testing. Ver.4-3 -

4 ELECTRICAL CHARACTERISTICS (V + /V - =±5V, Ta=25 C, V ICM =V, unless otherwise noted.) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Input Characteristics Input Offset Voltage NJM8512Bx / NJM8513Bx V IO1-8 4 µv V IO2 Ta = -4ºC to 125ºC µv NJM8512Ax / NJM8513Ax V IO1-8 8 µv V IO2 Ta = -4ºC to 125ºC µv Input Offset Voltage Drift NJM8512Bx / NJM8513Bx ΔVio/ΔT Ta = -4ºC to 125ºC µv/ºc NJM8512Ax / NJM8513Ax ΔVio/ΔT Ta = -4ºC to 125ºC µv/ºc Input Bias Current I B pa I B2 Ta = -4ºC to 125ºC na Input Offset Current I IO1-5 5 pa I IO2 Ta = -4ºC to 125ºC na Common Mode Input Voltage Range V ICM1 CMR 86dB V V ICM2 CMR 8dB, Ta = -4ºC to 125ºC V Common Mode Rejection Ratio CMR1 V CM=-2V to +2.5V db CMR2 V CM=-2V to +2.5V, Ta = -4ºC to 125ºC db CMR3 V CM=-1V to +2V db Voltage Gain A V1 R L=2kΩ, V O=-3V to +3V db A V2 R L=2kΩ, V O=-3V to +3V, Ta = -4ºC to 125ºC db A V3 RL=1kΩ, V O=-3V to +3V db Input capacitance C IN pf Channel Separation CS DC db Output Characteristics Maximum Output Voltage V OH1 R L=1kΩ, Ta = -4ºC to 125ºC V V OL1 R L=1kΩ, Ta = -4ºC to 125ºC V V OH2 R L=2kΩ, Ta = -4ºC to 125ºC V V OL2 R L=2kΩ, Ta = -4ºC to 125ºC V V OH31 R L=6Ω V V OH32 R L=6Ω, Ta = -4ºC to 125ºC V V OL41 R L=6Ω V V OL42 R L=6Ω, Ta = -4ºC to 125ºC V Supply Characteristics Supply Current (ALL Amps) : NJM8512 I CC1 G V=+1, R L= ma I CC2 G V=+1, R L=, Ta = -4ºC to 125ºC ma Supply Current (ALL Amps) : NJM8513 I CC1 G V=+1, R L= ma I CC2 G V=+1, R L=, Ta = -4ºC to 125ºC ma Dynamic Performance Unity Gain Frequency ft G V=+1, R L=2kΩ, C L=1pF MHz Slew Rate +SR RISE, G V=+1, V IN=2Vpp, R L=2kΩ V/µs -SR FALL, G V=+1, V IN=2Vpp, R L=2kΩ V/µs Settling Time ts1 To.1%, V to 4V step, Gv= µs Phase Margin Φ M deg Total Harmonic Distortion THD fo=1khz, G V=+1, R L=2kΩ % Noise Performance Input Voltage Noise Density V NI fo=.1hz to 1Hz µvpp en1 fo=1hz nv/ Hz en2 fo=1hz nv/ Hz en3 fo=1khz nv/ Hz en4 fo=1khz nv/ Hz (Note) Measurement is to be conducted in pulse testing Ver.4

5 ELECTRICAL CHARACTERISTICS 8 Input Offset Voltage vs. Temperature V + /V - =±15V, V ICM =V, N=196 8 Input Offset Voltage vs. Temperature V + /V - =±5V, V ICM =V, N= Input Offset Voltage [μv] Input Offset Voltage [μv] Temperature [ºC] Temperature [ºC] 6 Input Offset Voltage Distribution V + /V - =±15V, V ICM =V 6 Input Offset Voltage Distribution V + /V - =±5V, V ICM =V 5 N=196 5 N=196 Number of Amplifiers Number of Amplifiers Input Offset Voltage [μv] Input Offset Voltage [μv] 7 Input Offset Voltage Drift Distribution V + /V - =±15V, Ta=-4ºC to 125ºC 7 Input Offset Voltage Drift Distribution V + /V - =±5V, Ta=-4ºC to 125ºC 6 N=196 6 N=196 Number of Amplifiers Number of Amplifiers Input Offset Voltage Drift [μv/ºc] Input Offset Voltage Drift [μv/ºc] Ver.4-5 -

6 Input Offset Voltage vs. Common-mode Voltage V + /V - =±15V, V ICM =-12.5V to +12.5V 8 Input Offset Voltage vs. Common-mode Voltage V + /V - =±5V, V ICM =-2V to +2.5V 8 Input Offset Voltage [μv] Ta=25 C Ta=-4 C Ta=125 C Input Offset Voltage [μv] Ta=25 C Ta=-4 C Ta=125 C Input Common-mode Voltage [V] Input Common-mode Voltage [V] Common-mode Rejection Ratio [db] Common-mode Rejection Ratio vs. Temperature V + /V - =±15V, V ICM =-12.5V to +12.5V V + /V - =±5V, V ICM =-2V to +2.5V Temperature [ C] Common Mode Rejection Ratio [db] CMR vs. Frequency Gv=6dB, Ta=25 C V + /V - =±5V V + /V - =±15V 1 1k 1k 1k 1M 1M Frequency [Hz] Supply Voltage Rejection Ratio [db] Supply Voltage Rejection Ratio vs. Temperature V + /V - =±4.5V to ±16V, V ICM =V Temperature [ C] Supply Voltage Rejection Ratio [db] Supply Voltage Rejection Ratio vs. Frequency V + /V - =±15V, Gv=4dB, Ta=25ºC +SVR -SVR 1 1k 1k 1k 1M 1M Frequency [Hz] Ver.4

7 6 Gain/Phase vs. Frequency V + /V - =±15V, R F =1kΩ, R G =1kΩ, R L =2kΩ, Ta=25ºC 18 6 Gain/Phase vs. Frequency V + /V - =±5V, R F =1kΩ, R G =1kΩ, R L =2kΩ, Ta=25ºC 18 4 Gain 12 4 Gain 12 Voltage Gain [db] 2-2 Phase C L =1pF C L =1pF C L =1pF C L =1pF 6-6 Phase [deg] Voltage Gain [db] 2-2 Phase C L =1pF C L =1pF C L =1pF C L =1pF 6-6 Phase [deg] -4 C L =1pF C L =1pF C L =1pF 1k 1k 1k 1M 1M 1M Frequency [Hz] C L =1pF 1k 1k 1k 1M 1M 1M Frequency [Hz] Open-loop Gain vs. Temperature V ICM =V, R L =2kΩ 1n Input Bias Current vs. Temperature V ICM =V V + /V - =±15V, V O =-13.5V to +13.5V 1 1n Open-loop Gain [db] V + /V - =±5V, V O =-3V to +3V Input Bias Current [A] 1n 1p 1p V + /V - =±15V V + /V - =±5V Temperature [ C] 1p Temperature [ C] 3.5 Quiescent Current vs. Supply Voltage Gv=dB, V ICM =V 3.5 Quiescent Current vs. Temperature G V =db, V ICM =V Quiescent Current [ma] Ta=25 C Ta=-4 C Ta=125 C Quiescent Current [ma] V + /V - =±16V V + /V - =±15V V + /V - =±5V V + /V - =±4.5V Supply Voltage V + /V - [V] Temperature [ C] Ver.4-7 -

8 15 Maximum Output Voltage vs. Load Resistance V + /V - =±15V, V IN+ =1V/-1V, V IN -=V 5 Maximum Output Voltage vs. Load Resistance V + /V - =±5V, V IN+ =1V/-1V, V IN -=V Maximum Output Voltage [V] Ta=125 C Ta=-4 C Ta=25 C Ta=125 C Ta=25 C Ta=-4 C Maximum Output Voltage [V] Ta=125 C Ta=125 C Ta=25 C Ta=-4 C Ta=25 C Ta=-4 C k 1k 1k Load Resistance [Ω] 1 1k 1k 1k Load Resistance [Ω] 15 Maximum Output Voltage vs. Temperature V + /V - =±15V, V IN+ =1V/-1V, V IN -=V 5 Maximum Output Voltage vs. Temperature V + /V - =±5V, V IN+ =1V/-1V, V IN -=V Maximum Output Voltage [V] R L =1kΩ R L =1kΩ R L =2kΩ R L =2kΩ R L =6Ω R L=6Ω Maximum Output Voltage [V] R L =1kΩ R L =1kΩ R L =2kΩ R L =2kΩ R L =6Ω R L =6Ω Temperature [ºC] Temperature [ºC] 15 Maximum Output Voltage vs. Output Current V + /V - =±15V, V IN+ =1V/-1V, V IN -=V 5 Maximum Output Voltage vs. Output Current V + /V - =±5V, V IN+ =1V/-1V, V IN -=V 4 Maximum Output Voltage [V] Ta=125ºC Ta=125ºC Ta=25ºC Ta=25ºC Ta=-4ºC Ta=-4ºC Maximum Output Voltage [V] Ta=125ºC Ta=25ºC Ta=-4ºC Ta=25ºC Ta=125ºC Ta=-4ºC Output Current [ma] Output Current [ma] Ver.4

9 Small-Signal Step Response (Road Capacitance) V + /V - =±15V, Gv=dB, V IN =1V PP, R L =2kΩ, Ta=25ºC Small-Signal Step Response (Temperature) V + /V - =±15V, Gv=dB, V IN =1V PP, R L =2kΩ, C L =1pF INPUT INPUT.2V/div 1pF.2V/div -4ºC 125ºC 1pF 25ºC OUTPUT OUTPUT 1pF.1μsec/div Large Signal Step Response V + /V - =±15V, Gv=dB, V IN =1Vpp, R L =2kΩ INPUT 2V/div 3pF.1μsec/div OUTPUT 1μsec/div Ver.4-9 -

10 2. 1Hz to 1Hz Input Voltage Noise V + /V - =±15V, 1 to 1Hz BPF 1 Input Voltage Noise Density vs. Frequency Gv=4dB, R G =1Ω, R L =1kΩ, Ta=25 C Voltage [μv] Input Voltage Noise Density [nv/ Hz] V + /V - =±15V V + /V - =±5V time [sec] k 1k Frequency [Hz] THD + Noise vs. Output Voltage V + /V - =±15V, A V =+1, R L =2kΩ, Ta=25ºC f=1khz 2Hz Output Voltage [Vrms] Total Harmonic Distortion +Noise [%] THD + Noise vs. Output Voltage V + /V - =±5V, A V =+1, R L =2kΩ, Ta=25ºC f = 1kHz 2Hz Output Voltage [Vrms] Ver.4

11 8 Short Circuit Output Current V + /V - =±15V, V IN+ =V, V O =V, Ta=25ºC 8 Input Voltage vs. Output Voltage V + /V - =±5V, A V =db, R L =1kΩ Short Circuit Output Current [ma] V IN- = 1mV V IN- =+1mV Time [sec] Voltage [V] Time [2μs/div] VIN VOUT Ver

12 PACKAGE DIMENSIONS MSOP8(VSP8) ~ ±.2 4.±.3.55 ±.2.6MAX ±.1.2± M UNIT: mm Ver.4

13 PACKAGE DIMENSIONS SOP8 JEDEC 15 mil 5.±.3 ~ ±.2 3.9±.2 6.± MAX ± M.15±.1 1.5±.15 UNIT:mm Ver

14 PACKAGE DIMENSIONS SSOP ~ 1º ±.2 6.4± ±.1.5± MAX ± M.1±.1 UNIT:mm [CAUTION] The specifications on this data book are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this data book are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights Ver.4