Data Sheet No.PD 653-J IPS4G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS4G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp.this device combines a HEXFET POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 65 o C or when the drain current reaches A. This device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Product Summary R ds(on) 5mΩ (max) V clamp 5V I shutdown A T on/ T off.5µs Package 8-Lead SOIC Typical Connection Load R in series (if needed) IN control ƒ D S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com
3 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 5 o C unless otherwise specified). PCB mounting uses the standard footprint with 7 µm copper thickness. Symbol Parameter Min. Max. Units Test Conditions V ds Maximum drain to source voltage 47 V in Maximum input voltage -.3 7 V Iin, max Maximum IN current - + ma Isd cont. Diode max. continuous current () (for all Isd mosfets, rth=5 o C/W). Isd pulsed Diode max. pulsed current () 3 Pd Maximum power dissipation () (for all Pd mosfets, rth=5 o C/W) W ESD Electrostatic discharge voltage (Human Body) 4 C=pF, R=5Ω, ESD Electrostatic discharge voltage (Machine Model).5 kv C=pF, R=Ω, L=µH T stor. Max. storage temperature -55 5 Tj max. Max. junction temperature -4 +5 Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth Rth Rth3 Thermal resistance with standard footprint ( mosfets on) Thermal resistance with standard footprint ( mosfet on) 5 Thermal resistance with " square footprint ( mosfets on) 65 A o C o C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous Drain to Source voltage 35 VIH High level input voltage 4 6 V VIL Low level input voltage.5 Ids Continuous drain current (both mosfets at this current) Tamb=85 o C TAmbient = 85 o C, IN = 5V, rth = o C/W, Tj = 5 o C.53 A Rin Recommended resistor in series with IN pin 5 kω Tr-in(max) Max recommended rise time for IN signal (see fig. ) µs Fr-Isc () Max. frequency in short circuit condition (Vcc = 4V) khz () Limited by junction temperature (pulsed current limited also by internal wiring) () Operations at higher switching frequencies is possible. See Appl. notes. www.irf.com
Static Electrical Characteristics (Tj = 5 o C unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 5 o C 37 5 Tj = 5 o mω C 59 9 Vin = 5V, Ids = A Idss Drain to source leakage current.5 5 Vcc = 4V, Tj = 5 o C @Tj=5 o C µa Idss Drain to source leakage current 5 5 Vcc = 4V, Tj = 5 o C @Tj=5 o C V clamp Drain to Source clamp voltage 47 5 56 Id = ma (see Fig.3 & 4) V clamp Drain to Source clamp voltage 5 53 6 Id=Ishutdown (see Fig.3 & 4) Vin clamp IN to Source clamp voltage V 7 8. 9.5 Iin = ma Vin th IN threshold voltage.6 Id = 5mA, V ds = 4V Iin, -on ON state IN positive current 5 9 Vin = 5V µa Iin, -off OFF state IN positive current 5 3 5 Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 4V, Resistive Load = Ω, Rinput = kω, µs pulse, T j = 5 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time.5..5 Tr Rise time.5.3.5 See figure Trf Time to 3% final Rds(on) 5 µs Toff Turn-off delay time.5.6.5 See figure Tf Fall time.5.5.5 Qin Total gate charge nc Vin = 5V Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Tsd Over temperature threshold 65 o C See fig. Isd Over current threshold..7. A See fig. V reset IN protection reset threshold.5.3 3 V Treset Time to reset protection 4 µs Vin = V, Tj = 5 o C EOI_OT Short circuit energy (see application note) 4 µj Vcc = 4V www.irf.com 3
Functional Block Diagram All values are typical DRAIN 47 V 4Ω k Ω IN S Q 8. V 8 µ A R Q T > 65 c I sense I > sd SOURCE Lead Assignments D D D D S In S In 8 Lead SOIC 4 www.irf.com
Vin 5 V V Vin 9 % % Ids Isd I shutdown t < T reset t > T reset Ids Tr-in 9 % % T Tsd (65 c) T shutdown Vds Td on tr Td off tf Figure - Timing diagram Figure - IN rise time & switching time definitions T clamp Vin L V load Ids Vds Vds clamp ( Vcc ) ( see Appl. Notes to evaluate power dissipation ) Rem : V load is negative during demagnetization 5 v v Vin IN R D S Vds Ids + 4 V - Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit www.irf.com 5
All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 9 8 7 6 5 4 3 Tj = 5 o C Tj = 5 o C 3 4 5 6 7 8 % 8% 6% 4% % % 8% 6% 4% % % -5-5 5 5 75 5 5 75 Figure 5 - Rds ON (mω) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj ( o C) 9 8 7 6 5 4 3 ton delay rise time 3% rdson 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) (us) Vs Input Voltage (V) 4 3 toff delay fall time 3 4 5 6 7 8 Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6 www.irf.com
delay on rise time 3% rdson delay off fall time.. Figure 9 - Turn-ON Delay Time, Rise Time & Time to 3% final Rds(on) (us) Vs IN Resistor (Ω) Figure - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) 3.5.5.5 Isd 5 C Ilim 5 C 3 4 5 6 7 8 8 6 4 8 6 4-5 -5 5 5 75 5 5 Figure - Current Iim. & I shutdown (A) Vs Vin (V) Figure - I shutdown (A) Vs Temperature ( o C) www.irf.com 7
3 Std. footprint 7 C/W mosfet on Std. footprint C/W mosfet on T=5 C Std. footprint T= C Std footprint Current path capability should be above this curve mosfet is on -5 5 5. Load characteristic should be below underneath this curve this curve Figure 3 - Max.Cont. Ids (A) Vs Amb. Temperature ( o C) Figure 4 - Ids (A) Vs Protection Resp. Time (s) single pulse Hz rth= C/W dt=5 C khz rth= C/W dt=5 C Single pulse rth mosfet active. Vbat = 4 V Tjini = T sd all curves for mosfet active... rth mosfets active Figure 5 - Iclamp (A) Vs Inductive Load (mh) Figure 6 - Transient Thermal Imped. ( o C/W) Vs Time (s) 8 www.irf.com
8 6 4 8 6 4 Iin,on Iin,off -5-5 5 5 75 5 5 % 5% % 5% % 95% 9% 85% Vds clamp @ Isd Vin clamp @ ma 8% -5-5 5 5 75 5 5 Figure 7 - Input current (µa) Vs Tj ( o C) Figure 8 - Vin clamp and V clamp (%) Vs Tj ( o C) 6 4 Treset rise time fall time 8 6 4-5 -5 5 5 75 5 5 Figure 9 - Turn-on, Turn-off, and Treset (µs) Vs Tj ( o C) www.irf.com 9
A E 6 6X D 5 8 7 6 5 3 4 e B H.5 [.] A 6.46 [.55] 3X.7 [.5] FOOTPRINT 8X.7 [.8] 8X.78 [.7] DIM INCHES MILLIMETERS MIN MAX MIN MAX A A.53.4.688.98.35..75.5 b.3..33.5 c.75.98.9.5 D E.89.497.968.574 4.8 3.8 5. 4. e.5 BASIC.7 BASIC e.5 BASIC.635 BASIC H K L y.84.99.6.44.96.5 8 5.8.5.4 6..5.7 8 e A C y K x 45 8X b A.5 [.] C A B. [.4] 8X L 7 8X c NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M-994.. CONTROLLING DIMENS ION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -AA. 8-Lead SOIC 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED.5 [.6]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED.5 [.]. 7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. -67 - (MS-AA) IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 945 Tel: (3) 5-75 Data and specifications subject to change without notice. 6// www.irf.com