Ordering number : ENA1 NULN1C N-Channel Power MOFET 1V,.A, 1.Ω, TO-PF-L http://onsemi.com Features ON-resistance R(on)=Ω (typ.) Input capacitance Ciss=pF (typ.) 1V drive pecifications Absolute Maximum Ratings at Ta= C Parameter ymbol Conditions Ratings Unit rain to ource Voltage V 1 V ate to ource Voltage V ± V rain Current (C) I Limited only maximum temperature Tch=1 C. A rain Current (Pulse) IP PW 1μs, duty cycle 1% A Allowable Power issipation P. W Tc= C W Channel Temperature Tch 1 C torage Temperature Tstg -- to +1 C Avalanche Energy (ingle Pulse) *1 EA mj Avalanche Current * IAV. A Note : *1 V=V, L=1mH, IAV=.A (Fig.1) * L 1mH, single pulse tresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta= C TO-PF-L Parameter ymbol Conditions Ratings min typ max Unit rain to ource Breakdown Voltage V(BR) I=1mA, V=V 1 V Zero-ate Voltage rain Current I V=1V, V=V 1 ma ate to ource Leakage Current I V=±V, V=V ±1 na Cutoff Voltage V(off) V=1V, I=1mA V Forward Transfer Admittance yfs V=V, I=1.A 1.9 tatic rain to ource On-tate Resistance R(on) I=1.A, V=1V 1. Ω Input Capacitance Ciss pf Output Capacitance Coss V=V, f=1mhz pf Reverse Transfer Capacitance Crss pf Turn-ON elay Time td(on) 1 ns Rise Time tr ns ee Fig. Turn-OFF elay Time td(off) 1 ns Fall Time tf ns Total ate Charge Qg nc ate to ource Charge Qgs V=V, V=1V, I=.A. nc ate to rain Miller Charge Qgd 1 nc iode Forward Voltage V I=.A, V=V. 1. V Reverse Recovery Time trr ee Fig. ns Reverse Recovery Charge Qrr I=.A, V=V, di/dt=1a/μs nc ORERIN INFORMATION ee detailed ordering and shipping information on page of this data sheet. emiconductor Components Industries, LLC, 1 eptember, 1 91 TKIM TC-1/ No. A1-1/
NULN1C I -- V I -- V.. Tc= C V =V............ 1. 1. V 1V V V Tc= -- C C C 1.. V =V 1.. 1 rain to ource Voltage, V -- V IT1 R(on) -- V I=1.A 1 1 ate to ource Voltage, V -- V IT19 R(on) -- Tc tatic rain to ource On-tate Resistance, R (on) -- Ω 1 1 1 1 1 Tc= C C -- C tatic rain to ource On-tate Resistance, R (on) -- Ω 1 1 1 1 1 V =1V, I=1.A Forward Transfer Admittance, yfs -- 1 1. 1 1 1 ate to ource Voltage, V -- V IT1 yfs -- I V =V Tc= -- C C C ource Current, I -- A -- -- 1 1 1 Case Temperature, Tc -- C IT1 I -- V 1 V =V 1..1 Tc= C C -- C witching Time, W Time -- ns.1.1.1 1. 1 IT1 W Time -- I 1 V =V V =1V 1 td(off) t f tr t d (on) Ciss, Coss, Crss -- pf.1.... 1. 1. iode Forward Voltage, V -- V IT1 Ciss, Coss, Crss -- V 1 f=1mhz 1 1 Ciss Coss Crss 1.1 1. 1 IT1 1 1 1 rain to ource Voltage, V -- V IT19 No. A1-/
NULN1C ate to ource Voltage, V -- V 1 9 1. V =V I =.A V -- Qg 1 Total ate Charge, Qg -- nc P -- Ta IT1 1 1..1.1.1 I P =A (PW 1μs) I =.A Tc= C O A 1ms C operation 1ms Operation in this area is limited by R (on). 1ms 1μs rain to ource Voltage, V -- V P -- Tc 1μs 1. 1 1 1K 1K IT11 Allowable Power issipation, P -- W... 1. 1.. Allowable Power issipation, P -- W 1 1 1 1 Ambient Temperature, Ta -- C EA -- Ta 1 1 IT1 1 1 1 1 Case Temperature, Tc -- C IT1 Avalanche Energy derating factor -- % 1 1 1 1 1 Ambient Temperature, Ta -- C IT1 No. A1-/
NULN1C Package imensions NULN1C TO-PF-L CAE AH IUE O Unit : mm 1: ate : rain : ource Ordering & Package Information Marking Electrical Connection evice Package hipping memo NULN1C TO-PF-L C-9 pcs./tube Pb-Free N1 C LOT No. 1 No. A1-/
NULN1C Fig.1 Unclamped Inductive witching Test Circuit Fig. witching Time Test Circuit Ω R L 1V V VIN V IN V =V I =1.A R L =1Ω 1V V Ω NULN1C V PW 1μs.C. 1% V OUT P. Ω NULN1C Fig. Reverse Recovery Time Test Circuit NULN1C μh V=V river MOFET Note on usage : ince the NULN1C is a MOFET product, please avoid using this device in the vicinity of highly charged objects. ON emiconductor and the ON logo are registered trademarks of emiconductor Components Industries, LLC (CILLC). CILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of CILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. CILLC reserves the right to make changes without further notice to any products herein. CILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in CILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. CILLC does not convey any license under its patent rights nor the rights of others. CILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the CILLC product could create a situation where personal injury or death may occur. hould Buyer purchase or use CILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold CILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that CILLC was negligent regarding the design or manufacture of the part. CILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. P No. A1-/