MIEB 11HEH IGBT Module H Bridge S 25 = = 183 (sat) = 1.8 Part name (Marking on product) MIEB11HEH 13, 21 1 T1 D1 9 T2 D2 2 1 19 E72873 3 T3 D3 11 T D 1, 2 Features: SPT + IGBT technology low saturation voltage low switching losses square RBSO, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled SONIC free wheeling diode - fast and soft reverse recovery - low operation forward voltage solderable pi for PCB mounting package with copper base plate pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E3-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting 2116a 211 IXYS ll rights reserved 1-8
MIEB 11HEH Ouput Inverter T1 - T Ratings Symbol Definitio Conditio min. typ. max. Unit S collector emitter voltage = 25 C S M max. DC gate voltage max. traient collector gate voltage continuous traient 25 collector current T C = 25 C 8 T C = 8 C P tot total power dissipation T C = 25 C 63 W (sat) collector emitter saturation voltage (on chip level) = 1 ; = = 25 C (th) gate emitter threshold voltage = m; = = 25 C 5 6 7 ES collector emitter leakage current = S ; = = 25 C.9 I GES gate emitter leakage current = ±2 2 n C ies input capacitance = 25 ; = ; f = 1 MHz 73 pf Q G(on) total gate charge = 6 ; = ; = 1 75 nc t d(on) t r t d(off) t f E on E off E rec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load = 6 ; = 1 = ± ; = 1 W L S = 7 nh RBSO reverse bias safe operating area = ± ; = 1 W; K = 2 SCSO t SC short circuit safe operating area short circuit duration short circuit current = 9 ; = ±1 ; = 3.9 W; non-repetitive 1.8 2. 55 6 2 9.5 9.7.2 ±2 ±3 183 8 2.2 2..3 3 m m mj mj mj 1 µs R thjc thermal resistance junction to case (per IGBT).2 K/W Output Inverter D1 - D Ratings Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 25 C I F25 forward current T C = 25 C I F8 T C = 8 C F t rr Q rr E rec forward voltage (on chip level) max. reverse recovery current reverse recovery time I F = 1 ; = = 25 C inductive load = 6 ; = 1 = ± ; = 1 W L S = 7 nh 2. 1.95 33.5.2 135 9 2.2 2.25 R thjc thermal resistance junction to case (per diode). K/W T C = 25 C unless otherwise stated µc mj 2116a 211 IXYS ll rights reserved 2-8
MIEB 11HEH Module Ratings Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature ISOL isolation voltage I ISOL < 1 m; 5/6 Hz t = 1 min t = 1 s - - 5 5 3 36 CTI comparative tracking index 2 M d mounting torque (M5) 3 6 Nm R pin to chip see 1.8 mw d S d creep distance on surface strike distance through air.7 9.6 mm mm R thch thermal resistance case to heatsink with heatsink compound.1 K/W Weight 3 g = (sat) + 2x R pin to chip T C = 25 C unless otherwise stated Curves are measured on modul level except Fig. 1 to Fig. 17 C C C ~ ~ 2116a 211 IXYS ll rights reserved 3-8
MIEB 11HEH Circuit Diagram 13, 21 1 T1 D1 9 T2 D2 2D Data Matrix FOSS-ID 6 digits XXX XX-XXXXX YYCWx 2 1 19 Logo Part name Date Code Prod.Index 3 1, 2 T3 D3 11 T D Part number M = Module I = IGBT E = SPT B = 2nd Generation 11 = Current Rating H = H~ Bridge = Reverse oltage [] EH = E3-Pack Outline Drawing Dimeio in mm (1 mm =.39 ) Product Marking Remark: Dimeio without tolerances acc. DIN ISO 2768-T1-m Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIEB11HEH MIEB11HEH Box 5 53 2116a 211 IXYS ll rights reserved - 8
MIEB 11HEH Traistor T1 - T 3 25 = 3 25 = 17 19 13 2 1 = 25 C 2 1 11 5 5 9 1 2 3 5 [] Fig. 1 Typ. output characteristics 1 2 3 5 [] Fig. 2 Typ. output characteristics 25 2 2 = 1 = 6 1 1 [] 5 = 25 C 5 5 6 7 8 9 1 11 13 [] Fig. 3 Typ. trafer characteristics 2 6 8 1 Q G [nc] Fig. Typ. turn-on gate charge 3 t d(on) 2 6 25 5 2 5 E [mj] 2 1 5 = 1 Ω = 6 = ± E on E rec(off) 2 6 8 1 1 16 18 2 t r 1 t 75 [] 5 25 E [mj] 16 8 = 1 Ω t f E off = 6 = ± 2 6 8 1 1 16 18 2 t d(off) t 3 [] 2 1 Fig. 5 Typ. turn-on energy & switching times versus collector current Fig. 6 Typ. turn-off energy & switching times versus collector current 2116a 211 IXYS ll rights reserved 5-8
MIEB 11HEH Traistor T1 - T 2 = 1 = 6 = ± t d (on) 2 1 8 E off t d(off) 1 8 E 1 [mj] 5 E on t r 1 t [] 5 E 6 [mj] = 1 = 6 = ± t 6 [] E rec(off) 2 t f 2 5 1 2 25 3 35 [Ω] Fig. 7 Typ. turn-on energy and switching times versus gate resistor 5 1 2 25 3 35 [Ω] Fig. 8 Typ. turn-off energy and switching times versus gate resistor 2116a 211 IXYS ll rights reserved 6-8
MIEB 11HEH Diode D1 - D 3 3 6 25 = 25 C 25 = 33 Ω 5 I F 2 1 5 2 1 5 I F = 1 r = 6 33 Ω 22 Ω 22 Ω 1 Ω 1 Ω 3.3 Ω t rr t rr 3 [] 2 1..5 1. 1.5 2. 2.5 3. 3.5. F [] Fig. 9 Typ. forward characteristics 1 2 25 3 /dt [/µs] Fig. 1 Typ. reverse recovery characteristics 2 175 R g = 1 Ω r = 6 3.5. Diode 5 1 75 Q rr Q rr 2 [µc].3 Z thjc [K/W].2 IGBT 5 25 1.1 25 5 75 1 5 175 2 225 I F Fig. 11 Typ. reverse recovery characteristics..1.1.1 1 1 t p [s] Fig. Typ. traient thermal impedance IGBT FRD R i τ i R i τ i.3.1..5.1.1..6.57.21.9.25.13.1.255.5 Fig. 13 Thermal coefficients 2116a 211 IXYS ll rights reserved 7-8
MIEB 11HEH Diode D1 - D 2 2 R = 6 2 16 1 R = 6 2 Q rr [µc] 16 1 1 8 1 5 8 5 6 1 1 16 18 2 22 /dt [/µs] Fig. 1 Typ. reverse recov.charge Q rr vs. di/dt 1 1 16 18 2 22 /dt [/µs] Fig. Typ. peak reverse current I RM vs. di/dt 7 6 5 R = 6 8 6 R = 6 2 t rr [] 3 2 1 E rec [mj] 1 5 2 5 2 1 1 1 16 18 2 22 /dt [/µs] Fig. 16 Typ. recovery time t rr versus di/dt 1 1 16 18 2 22 /dt [/µs] Fig. 17 Typ. recovery energy E rec versus di/dt 2116a 211 IXYS ll rights reserved 8-8
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