SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38 - + 0.97 - +.Base Gate 2.Emitter Source 3. 3.collector Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -2 V Gate-Source Voltage VGS ±8 Continuous Drain Current VGS=4.5V @ TA=25-4.3 ID Continuous Drain Current VGS=4.5V@ TA=70-3.4 A Pulsed Drain Current a IDM -34 Power Dissipation @ TA=25 PD.3 W Power Dissipation @ TA=70 0.8 Single Pulse Avalanche Energy b EAS 33 mj Thermal Resistance.Junction- to-ambient RthJA 0 /W Linera Derating Factor 0.0 W/ Junction Temperature TJ 50 Junction and Storage Temperature Range Tstg -55 to 50 Notes: a.repetitive Rating :Pulse width limited by maximum junction temperature b.starting TJ=25, L=3.5mH, RG=25Ω, IAS=-4.3A
IRLML640 (KRLML640) Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -2 V Zero Gate Voltage Drain Current IDSS VDS=-2V, VGS=0V - VDS=-9.6V, VGS=0V, TJ= 55-25 μa Gate-Body leakage current IGSS VDS=0V, VGS=±8V ±0 na Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.4-0.55-0.95 V VGS=-4.5V, ID=-4.3A 50 Static Drain-Source On-Resistance RDS(On) VGS=-2.5V, ID=-2.5A 85 mω VGS=-.8V, ID=-2A 25 Forward Transconductance gfs VDS=-V, ID=-4.3A 8.6 S Input Capacitance Ciss 830 Output Capacitance Coss VGS=0V, VDS=-V, f=mhz 80 pf Reverse Transfer Capacitance Crss 25 Total Gate Charge Qg 5 Gate Source Charge Qgs VGS=-5.0V, VDS=-V, ID=-4.3A.4 2. nc Gate Drain Charge Qgd 2.6 3.9 Turn-On DelayTime td(on) Turn-On Rise Time tr 32 ID=-.0A, VDS=-6.0V, RL=6Ω,RGEN=89Ω Turn-Off DelayTime td(off) 250 ns Turn-Off Fall Time tf 2 Body Diode Reverse Recovery Time trr IF=-.3A, di/dt=-0a/μs 22 33 Body Diode Reverse Recovery Charge Qrr IF=-.3A, di/dt=-0a/μs 8 2 Nc Maximum Body-Diode Continuous Current IS.3 A Diode Forward Voltage VSD IS=-.3A,VGS=0V -.2 V Marking Marking F * 2 i
-I D, Drain-to-Source Current (Α) -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) SMD Type IRLML640 (KRLML640) 0 VGS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V BOTTOM -.0V 0 VGS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V BOTTOM -.0V -.0V -.0V 0.0 20µs PULSE WIDTH Tj = 25 C 0 -V DS, Drain-to-Source Voltage (V) 0.0 20µs PULSE WIDTH Tj = 50 C 0 -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0.0 T J = 25 C T.0 J = 50 C.0 V DS = -2V 20µs PULSE WIDTH.0.5 2.0 2.5 3.0 3.5 4.0 -V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -4.3A.5.0 0.5 V GS = -4.5V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
C, Capacitance(pF) SMD Type IRLML640 (KRLML640) 200 00 800 600 400 200 Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd -V GS, Gate-to-Source Voltage (V) 8 6 4 2 I D = -4.3A V DS =-V 0 0 V DS, Drain-to-Source Voltage (V) 0 0 4 8 2 6 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J= 50 C T J = 25 C V GS = 0 V 0.2 0.6.0.4.8 -V SD,Source-to-Drain Voltage (V). -I I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TC = 25 C TJ = 50 C Single Pulse 0 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4
SMD Type IRLML640 (KRLML640) -I D, Drain Current (A) 5.0 4.0 3.0 2.0.0 0.0 25 50 75 0 25 50 T C, Case Temperature ( C) E AS, Single Pulse Avalanche Energy (mj) 80 60 40 20 I D TOP -.9A -3.4A BOTTOM -4.3A 0 25 50 75 0 25 50 Starting T, Junction Temperature ( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum Avalanche Energy Vs. Drain Current 00 Thermal Response (Z thja ) 0 D = 0.50 0.20 0 0.05 PDM 0.02 0.0 t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA 0.0000 0.000 0.00 0.0 t, Rectangular Pulse Duration (sec) www.irf.com Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
-V GS(th) Gate threshold Voltage (V) R DS ( on ), Drain-to-Source On Resistance ( ) SMD Type IRLML640 (KRLML640) 0 Ω 0.20 R DS(on), Drain-to -Source Voltage ( ) Ω 0.09 VGS = -.8V VGS = -2.5V 0.08 5 0.07 0.06 0 0.05 Id = -4.3A 0.04 0.03 0.05 VGS = -4.5V 0.02.0 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage ( V ) 0.00 0 20 30 40 -I D, Drain Current ( A ) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current 0.8 0.7 0.6 I D = -250µA 0.5 0.4 0.3-75 -50-25 0 25 50 75 0 25 50 T J, Temperature ( C ) Fig 4. Typical Threshold Voltage Vs. Junction Temperature 6