l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free HEXFET Power MOSFET V DSS R DS(on) max (mw) I D -30V 98@V GS = -V -3.0A 65@V GS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3 TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. G S 2 3 D Micro3 TM Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRLML5203TRPbF Micro3 (SOT-23) Tape and Reel 3000 IRLML5203TRPbF Absolute Maximum Ratings Parameter Max. Units V DS Drain- Source Voltage -30 V I D @ T A = 25 C Continuous Drain Current, V GS @ -V -3.0 I D @ T A = 70 C Continuous Drain Current, V GS @ -V -2.4 A I DM Pulsed Drain Current -24 P D @T A = 25 C Power Dissipation.25 P D @T A = 70 C Power Dissipation 0.80 W Linear Derating Factor mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 0 C/W www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -30 V V GS = 0V, I D = -250μA ΔV (BR)DSS/ΔT J Breakdown Voltage Temp. Coefficient 0.09 V/ C Reference to 25 C, I D = -ma 98 V GS = -V, I D = -3.0A R DS(on) Static Drain-to-Source On-Resistance mω 65 V GS = -4.5V, I D = -2.6A V GS(th) Gate Threshold Voltage -.0-2.5 V V DS = V GS, I D = -250μA g fs Forward Transconductance 3. S V DS = -V, I D = -3.0A I DSS Drain-to-Source Leakage Current -.0 V DS = -24V, V GS = 0V µa -5.0 V DS = -24V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -20V na Gate-to-Source Reverse Leakage 0 V GS = 20V Q g Total Gate Charge 9.5 4 I D = -3.0A Q gs Gate-to-Source Charge 2.3 3.5 nc V DS = -24V Q gd Gate-to-Drain ("Miller") Charge.6 2.4 V GS = -V t d(on) Turn-On Delay Time 2 V DD = -5V t r Rise Time 8 I D = -.0A ns t d(off) Turn-Off Delay Time 88 R G = 6.0Ω t f Fall Time 52 V GS = -V C iss Input Capacitance 5 V GS = 0V C oss Output Capacitance 7 pf V DS = -25V C rss Reverse Transfer Capacitance 43 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D -.3 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -24 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -.3A, V GS = 0V t rr Reverse Recovery Time 7 26 ns T J = 25 C, I F = -.3A Q rr Reverse Recovery Charge 2 8 nc di/dt = -0A/μs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t 5sec. Pulse width 400μs; duty cycle 2%. 2 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
-I D, Drain-to-Source Current (A) 0 0. VGS TOP -5V -V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20μs PULSE WIDTH 0.0 T J = 25 C 0. 0 -V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -5V -V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM-2.7V -2.70V 20μs PULSE WIDTH 0. T J = 50 C 0. 0 -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 50 C T J = 25 C V DS= -5V 20μs PULSE WIDTH 0. 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 3.0A.5.0 0.5 V GS = -V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
C, Capacitance (pf) 800 600 400 200 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss C rss 0 0 -V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) 20 6 2 8 4 I D = -3.0A V DS =-24V V DS =-5V 0 0 4 8 2 6 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V 0. 0.4 0.6 0.8.0.2.4.6.8 -V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TA = 25 C TJ = 50 C Single Pulse 0. 0. 0 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
3.0 V DS R D -I D, Drain Current (A) 2.0.0 R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. V DD Fig a. Switching Time Test Circuit + - 0.0 25 50 75 0 25 50 T C, Case Temperature ( C) V GS t d(on) t r t d(off) t f % Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 D = 0.50 0.20 0. 0.05 0.02 PDM 0.0 t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA 0. 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
R DS(on), Drain-to -Source On Resistance ( Ω) R DS (on), Drain-to-Source On Resistance (Ω) IRLML5203PbF 0.4 0.40 0.3 0.2 0.30 0. 0. 0.20 V GS = -4.5V 0.09 0.08 I D = -3.0A 0. V GS = -V 0.07 4.0 6.0 8.0.0 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) 0.00 0 4 8 2 6 -I D, Drain Current (A) Fig. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2μF.3μF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
-V GS(th), Variace ( V ) Power (W) IRLML5203PbF 2.5 30 I D = -250μA 20 2.0.5-75 -50-25 0 25 50 75 0 25 50 T J, Temperature ( C ) 0 0.00 0.0 0.0.000.000 0.000 Time (sec) Fig 4. Threshold Voltage Vs. Temperature Fig 5. Typical Power Vs. Time 7 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) 6 D 5 S Y M B O L A DIME NSIONS MILLIMETERS INCHES MIN MAX MIN MAX 0.89.2.036.044 A 0.0 0..0004.0039 3 2 6 E ccc E C B A A2 0.88 b 0.30 c 0.08 D E 2.80 2..02 0.50 0.20 3.04 2.64.035.040.09.0032..083.096.0078.9.3 e e B 5 E.20.40.048.055 e 0.95 BSC.0375 BSC e.90 BSC.075 BSC L 0.40 0.60.058.0236 L 0.25 BS C.08 BSC 0 0 0 8 8 aaa 0..004 bbb 0.20.008 ccc 0.5.006 4 H A A2 L A 3X b aaa C bbb C A B 3 S URF 7 3X L 0 RECOMMENDED FOOTPRINT NOT ES 0.972 3X [.038]. DIMENSIONING AND TOLERANCING PER ASME Y4.5M-994. 2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES. 2.742 [.79] 3. CONTROLLING DIMENSION: MILLIMETER. 4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6 DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. 7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB. 0.95 [.0375].90 [.075] 0.802 3X [.03] Micro3 (SOT-23 / TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/200 DATE CODE PART NUMBER Cu WIRE HALOGEN FREE X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML00 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML930 R = IRLML9303 LEAD-FREE ASSEMBLY LOT CODE S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 X = IRLML2244 Y = IRLML2246 Z = IRFML9244 DATE CODE EXAMPLE: YWW = 432 = DF YWW = 503 = 5C W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W 20 200 0 A 202 2002 2 02 B 203 2003 3 03 C 204 2004 4 04 D 205 2005 5 206 2006 6 207 2007 7 208 2008 8 209 2009 9 2020 20 0 24 X 25 Y 26 Z W = (27-52) IF PRECEDED BY A LETTER YEAR Y WORK WEEK W 20 200 A 27 A 202 2002 B 28 B 203 2003 C 29 C 204 2004 D 30 D 205 2005 E 206 2006 F 207 2007 G 208 2008 H 209 2009 J 2020 20 K 50 X 5 Y 52 Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) 78.00 ( 7.008 ) MAX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at http://www.irf.com/package 9 www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204
Qualification information Qualification level Cons umer (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS compliant Micro3 (SOT-23) MS L (per JEDE C J-S TD-020D ) Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release Revision History Date 4/28/204 Comment Updated data sheet with new IR corporate template. Updated package outline & part marking on page 8. Added Qualification table -Qual level "Consumer" on page. Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ www.irf.com 204 International Rectifier Submit Datasheet Feedback April 28, 204