SGM Ω, Low Voltage Quad, SPDT Analog Switch

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GENERAL DESCRIPTION The SGM3699 is a quad, low on-resistance, low voltage, bidirectional, single-pole/double-throw (SPDT) CMOS analog switch that is designed to operate from a single 1.8V to 4.35V power supply. Targeted applications include battery powered equipment that benefit from low R ON (0.5Ω) and fast switching speeds (t ON = 52ns, t OFF = 25ns). The SGM3699 consists of four SPDT switches. It is configured as a dual double-pole/double-throw (DPDT) device with two logic control inputs that control two SPDT switches each. The configuration can be used as a dual differential 2-to-1 multiplexer/demultiplexer. FEATURES Low Voltage Operation: 1.8V to 4.35V Low On-Resistance: 0.5Ω (TYP) Low On-Resistance Flatness -3dB Bandwidth: 70MHz Fast Switching Times (4.2V) t ON = 52ns t OFF = 25ns Rail-to-Rail Input and Output Operation Low Power Consumption TTL/CMOS Compatible Logic Control -40 to +85 Operating Temperature Range Available in Green TQFN-3 3-16L Package The SGM3699 is available in Green TQFN-3 3-16L package. APPLICATIONS Communication Systems Cell Phones Portable Instrumentation Audio Signal Routing Audio and Video Switching PCMCIA Cards Computer Peripherals Modems PDAs BLOCK DIAGRAM 1 IN1-IN2 2 3 IN3-IN4 4 NC1 NO1 NC2 NO2 NC3 NO3 NC4 NO4 Figure 1. Block Diagram REV. C. 2

PACKAGE/ORDERING INFORMATION MODEL PACKAGE DESCRIPTION SPECIFIED TEMPERATURE RANGE ORDERING NUMBER SGM3699 TQFN-3 3-16L -40 to +85 SGM3699YTQ16/TR PACKAGE MARKING 3699TQ XXXXX PACKING OPTION Tape and Reel, 3000 NOTE: XXXXX = Date Code and Vendor Code. Green (RoHS & HSF): defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If you have additional comments or questions, please contact your SGMICRO representative directly. ABSOLUTE MAXIMUM RATINGS to... 0V to 4.6V Analog, Digital voltage range (1)...-0.3V to () + 0.3V Continuous Current NO, NC, or... ±200mA Peak Current NO, NC, or... ±350mA Junction Temperature... +150 Storage Temperature Range... -65 to +150 Lead Temperature (Soldering, 10s)... +260 ESD Susceptibility HBM... 4000V MM... 400V REMENDED OPERATING CONDITIONS Operating Temperature Range... -40 to +85 OVERSTRESS CAUTION Stresses beyond those listed may cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational section of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ESD SENSITIVITY CAUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. DISCLAIMER reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. 2

PIN CONFIGURATION 1 NO1 (TOP VIEW) 16 15 14 NC4 13 NC1 1 12 4 IN1-IN2 NO2 2 3 11 10 NO4 IN3-IN4 2 4 9 NC3 5 6 7 8 NC2 NO3 3 TQFN-3 3-16L PIN DESCRIPTION PIN NAME FUNCTION 1, 5, 9, 13 NC X Normally-Closed Terminal. 2, 10 IN X Digital Control Pin to Connect the Terminal to the NO or NC Terminals. 3, 7, 11, 15 NO X Normally-Open Terminal. 4, 8, 12, 16 X Common Terminal. 6 Ground. 14 Power Supply. Exposed Pad Exposed pad should be soldered to PCB board and connected to or left floating. NOTE: NO X, NC X and X terminal may be an input or output. FUNCTION TABLE IN1-IN2 FUNCTION NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON IN3-IN4 FUNCTION NC3 and NC4 NO3 and NO4 0 ON OFF 1 OFF ON 3

ELECTRICAL CHARACTERISTICS ( = +4.2V, = 0V, V IH = +1.6V, V IL = +0.5V, Full = -40 to +85, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V Full 0 V On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITAL INPUTS R ON R ON R FLAT(ON) V NO or V NC = 1V, I = -100mA, Test Circuit 1 V NO or V NC = 1V, I = -100mA, Test Circuit 1 V NO or V NC = 1V, 2.5V, I = -100mA, Test Circuit 1 +25 0.5 0.85 Ω Full 1.2 Ω +25 0.1 0.22 Ω Full 0.45 Ω +25 0.15 0.25 Ω Full 0.35 Ω I NC(OFF), I NO(OFF) V NO or V NC = 3.3V/0.3V, V = 0.3V/3.3V Full 1 μa I NC(ON), I NO(ON), I (ON) V = 0.3V/3.3V, V NO or V NC = 0.3V/3.3V or floating Full 1 μa Input High Voltage V INH Full 1.6 V Input Low Voltage V INL Full 0.5 V Input Leakage Current I IN V IN = 0V or 4.2V Full 1 μa DYNAMIC CHARACTERISTICS Turn-On Time t ON V NO or V NC = 2.0V, R L = 50Ω, = 35pF, +25 52 ns Turn-Off Time t OFF Test Circuit 2 +25 25 ns Charge Injection Q = 1.0nF, V G = 0V, R G = 0Ω, Test Circuit 3 +25 30 pc Break-Before-Make Time Delay Off Isolation Channel-to-Channel Crosstalk -3dB Bandwidth Channel ON Capacitance POWER REQUIREMENTS t D O ISO X TALK BW C NC(ON), C NO(ON), C (ON) V NO or V NC = 1.5V, R L = 50Ω, = 35pF, Test Circuit 4 Signal = 0dBm, V NO or V NC centered between and, R L = 50Ω, = 5pF, Test Circuit 5 Signal = 0dBm, R L = 50Ω, = 5pF, Test Circuit 6 Signal = 0dBm, R L = 50Ω, = 5pF, Test Circuit 7 +25 8 ns f = 100kHz +25-75 f = 1MHz +25-55 f = 1MHz +25-103 f = 10MHz +25-65 db db +25 70 MHz f = 1MHz +25 80 pf Power Supply Range Full 1.8 4.35 V Power Supply Current I + V IN = 0V or Full 1 μa 4

ELECTRICAL CHARACTERISTICS (continued) ( = +2.7V to +3.6V, = 0V, V IH = +1.5V, V IL = +0.4V, Full = -40 to +85. Typical values are at = +3.0V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V Full 0 V On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITAL INPUTS R ON R ON R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) = 2.7V, V NO or V NC = 1V, I = -100mA, Test Circuit 1 = 2.7V, V NO or V NC = 1V, I = -100mA, Test Circuit 1 = 2.7V, V NO or V NC = 1V, 2.5V, I = -100mA, Test Circuit 1 = 3.6V, V NO or V NC = 3.3V/0.3V, V = 0.3V/3.3V = 3.6V, V = 0.3V/3.3V, V NO or V NC = 0.3V/3.3V or floating +25 0.6 0.9 Ω Full 1.3 Ω +25 0.15 0.25 Ω Full 0.5 Ω +25 0.15 0.25 Ω Full 0.35 Ω Full 1 μa Full 1 μa Input High Voltage V INH Full 1.5 V Input Low Voltage V INL Full 0.4 V Input Leakage Current I IN = 2.7V, V IN = 0V or 2.7V Full 1 μa DYNAMIC CHARACTERISTICS Turn-On Time t ON = 3.3V, V NO or V NC = 2.0V, R L = 50Ω, +25 54 ns Turn-Off Time t OFF = 35pF, Test Circuit 2 +25 38 ns Charge Injection Q = 1.0nF, V G = 0V, R G = 0Ω, Test Circuit 3 +25 26 pc Break-Before-Make Time Delay Off Isolation Channel-to-Channel Crosstalk -3dB Bandwidth Channel ON Capacitance t D O ISO X TALK BW C NC(ON), C NO(ON), C (ON) V NO or V NC = 1.5V, R L = 50Ω, = 35pF, +25 12 ns Test Circuit 4 Signal = 0dBm, V NO or V NC f = 100kHz +25-75 centered between and, db R L = 50Ω, = 5pF, Test Circuit 5 f = 1MHz +25-55 Signal = 0dBm, R L = 50Ω, = 5pF, Test Circuit 6 Signal = 0dBm, R L = 50Ω, = 5pF, Test Circuit 7 f = 1MHz +25-103 f = 10MHz +25-65 db +25 70 MHz f = 1MHz +25 80 pf 5

TYPICAL PERFORMANCE CHARACTERISTICS On Response (db) 3 0-3 -6 On Response vs. Frequency = +3.3V T A = +25 On Response (db) 3 0-3 -6 On Response vs. Frequency = +4.2V T A = +25-9 0.1 1 10 100 1000 Frequency (MHz) -9 0.1 1 10 100 1000 Frequency (MHz) On Response (db) 20 0-20 -40-60 Response vs. Frequency OFF-ISOLATION -80 CROSSTALK -100 = +3.3V -120 T A = +25-140 0.01 0.1 1 10 100 1000 Frequency (MHz) On Response (db) 20 0-20 -40-60 -80 Response vs. Frequency OFF-ISOLATION CROSSTALK -100-120 = +4.2V T A = +25-140 0.01 0.1 1 10 100 1000 Frequency (MHz) 6

TEST CIRCUITS 100mA V1 NO or NC V NO or V NC R ON = V1/100mA Test Circuit 1. On Resistance 0.1μF NO or NC V IN 50% 50% V NO or V NC IN RL 50Ω 35pF 90% 90% t ON t OFF Test Circuit 2. Switching Times 0.1μF R G NO or NC ΔVOUT V G IN 1nF V IN ON OFF ON 0V V IN Test Circuit 3. Charge Injection 7

TEST CIRCUITS (continued) 0.1μF V NO or V NC NC NO V IN 0 50% IN R L 50Ω 35pF V NO or V NC 90% t D Test Circuit 4. Break-Before-Make Time Delay, t D 0.1μF NC NO Source Signal R L 50Ω IN R L 50Ω 5pF Test Circuit 5. Off Isolation 8

TEST CIRCUITS (continued) 0.1μF NO or NC Source Signal R L 50Ω 5pF N.C. NO or NC IN1-IN2 R L 50Ω 5pF Channel To Channel Crosstalk = -20 log V NO or V NC Test Circuit 6. Channel-to-Channel Crosstalk 0.1μF NO or NC Source Signal IN 5pF Test Circuit 7. -3dB Bandwidth 9

PACKAGE INFORMATION PACKAGE OUTLINE DIMENSIONS TQFN-3 3-16L D e N16 L D1 N1 E E1 k b N5 TOP VIEW BOTTOM VIEW 1.7 0.7 A 3.6 2.2 1.7 A1 SIDE VIEW A2 0.5 0.24 REMENDED LAND PATTERN (Unit: mm) Dimensions In Millimeters Dimensions In Inches Symbol MIN MAX MIN MAX A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A2 0.203 REF 0.008 REF D 2.900 3.100 0.114 0.122 D1 1.600 1.800 0.063 0.071 E 2.900 3.100 0.114 0.122 E1 1.600 1.800 0.063 0.071 k 0.200 MIN 0.008 MIN b 0.180 0.300 0.007 0.012 e 0.500 TYP 0.020 TYP L 0.300 0.500 0.012 0.020 TX00081.000

PACKAGE INFORMATION TAPE AND REEL INFORMATION REEL DIMENSIONS TAPE DIMENSIONS P2 P0 W Q1 Q2 Q1 Q2 Q1 Q2 B0 Q3 Q4 Q3 Q4 Q3 Q4 Reel Diameter P1 A0 K0 Reel Width (W1) DIRECTION OF FEED NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF TAPE AND REEL Package Type Reel Diameter Reel Width W1 A0 B0 K0 P0 P1 P2 W Pin1 Quadrant TQFN-3 3-16L 13 12.4 3.35 3.35 1.13 4.0 8.0 2.0 12.0 Q1 DD0001 TX10000.000

PACKAGE INFORMATION CARTON BOX DIMENSIONS NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF CARTON BOX Reel Type Length Width Height Pizza/Carton 13 386 280 370 5 DD0002 TX20000.000