V RM = 6500 V I (AV)M = 1405 A I (RMS) = 2205 A I SM = 22 10 3 A V 0 = 1.2 V r = 0.6 m Bi-Directional Control hyristor 5SB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 wo thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy management and industrial applications Optimum power handling capability Interdigitated amplifying gate he electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) Blocking Parameter Symbol Conditions 5SB 13N6500 Unit Max. surge peak forward blocking voltage Max repetitive peak forward blocking voltage V SM t p = 10 ms, f = 5 Hz vj = 5 125 C, Note 1 6500 V V RM f = 50 Hz, t p = 10 ms, t p1 = 250 s, 6500 V vj = 5 125 C, Note 1 Max crest working forward voltages V WM 3300 V Critical rate of rise of offstate dv/dt crit Exp. to 3750 V, vj = 125 C 2000 V/s voltage Max reverse leakage I R(M) V RM, vj = 125 C 400 ma Note 1: Voltage de-rating factor of 0.11% per C is applicable for vj below +5 C Note 2: Recommended minimum ratio of V DRM / V DWM or V RRM / V RWM = 2. See App. Note 5SYA 2051. Mechanical data Mounting force F M 81 90 108 kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 2.9 kg Housing thickness H F M = 90 kn, a = 25 C 35 35.6 mm Surface creepage distance D S 53 mm Air strike distance D a 22 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
5SB 13N6500 On-state Average on-state I (AV)M Half sine wave, c = 70 C 1405 A RMS on-state I (RMS) 2205 A RMS on-state I (RMS) Full sine wave, c = 70 C 3120 A Peak non-repetitive surge I SM t p = 10 ms, vj = 125 C, sine wave 22.0 10 3 A after surge: V D = V R = 0 V Limiting load integral I 2 t 2.42 10 6 A 2 s Peak non-repetitive surge I SM t p = 8.3 ms, vj = 125 C, sine wave 24.0 10 3 A after surge: V D = V R = 0 V Limiting load integral I 2 t 2.39 10 6 A 2 s On-state voltage V I = 3000 A, vj = 125 C 2.95 V hreshold voltage V 0 I = 670 A - 2000 A, vj = 125 C 1.2 V Slope resistance r 0.6 m Holding I H vj = 25 C 300 ma vj = 125 C 175 ma Latching I L vj = 25 C 500 ma vj = 125 C 300 ma Switching Critical rate of rise of onstate Critical rate of rise of onstate Circuit commutated turn-off time Critical rate of rise of commutating voltage di/dt crit vj = 125 C, I RM = 2000 A, Cont. f = 50 Hz 250 A/µs di/dt crit V D 3750 V, Cont. 500 A/µs I FG = 2 A, t r = 0.5 µs f = 1Hz t q vj = 125 C, I RM = 2000 A, 800 µs V R = 200 V, di /dt = -1.5 A/µs, V D 0.67V RM, dv D /dt = 20 V/µs, dv/dt com vj = 125 C, V R 0.67V RM 500 V/µs Reverse recovery charge Q rr vj = 125 C, I RM = 2000 A, 2400 3800 µas Reverse recovery I RM V R = 200 V, di /dt = -1.5 A/µs 45 65 A Gate turn-on delay time t gd vj = 25 C, V D = 0.4V RM, I FG = 2 A, t r = 0.5 µs 3 µs Doc. No. 5SYA1035-04 Aug. 10 page 2 of 7
5SB 13N6500 riggering Peak forward gate voltage V FGM 12 V Max. rated peak forward I FGM 10 A gate Peak reverse gate voltage V RGM 10 V Max. rated gate power loss P G For DC gate 3 W Max. rated peak forward P GM(AV) W gate power see Fig. 9 Gate trigger voltage V G vj = 25 C 2.6 V Gate trigger I G vj = 25 C 400 ma Gate non-trigger voltage V GD V D = 0.4 x V RM, vj = 125 C 0.3 V Gate non-trigger I GD V D = 0.4 x V RM 10 ma hermal Operating junction temperature range vj 125 C Storage temperature range stg -40 140 C hermal resistance junction to case (Valid for one thyristor half no heat flow to the second half.) hermal resistance case to heatsink R th(j-c) R th(j-c) R th(c-h) R th(c-h) Double-side cooled Single-side cooled Double-side cooled Single-side cooled 11.4 K/kW 22.8 K/kW 2 K/kW 4 K/kW Analytical function for transient thermal impedance: n -t/ Zth(j-c) (t) = R i(1- e i ) i1 i 1 2 3 4 R i (K/kW) 6.770 2.510 1.340 0.780 i (s) 0.8651 0.1558 0.0212 0.0075 Fig. 1 ransient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA1035-04 Aug. 10 page 3 of 7
5SB 13N6500 On-state characteristic model: V ABI C ln( I 1) D max I Valid for i = 200 2000 A A B C D 1.328 257.0 10-6 -92.0 10-3 28.0 10-3 Fig. 2 On-state characteristics, j = 125 C, 10ms half sine Fig. 3 On-state voltage characteristics case ( C) 130 125 120 115 110 Double-sided cooling DC 180 rectangular 180 sine 120 rectangular 105 100 95 90 85 80 75 70 0 500 1000 1500 2000 2500 I AV (A) 5SB 13N6500 Fig. 4 On-state power dissipation vs. mean on-state. Switching losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state. Switching losses ignored. Doc. No. 5SYA1035-04 Aug. 10 page 4 of 7
5SB 13N6500 Fig. 6 Surge on-state vs. pulse length. Half-sine wave. Fig. 7 Surge on-state vs. number of pulses. Half-sine wave, 10 ms, 50Hz. I G (t) I GM 2..5 A 100 % 90 % I GM I Gon di G /dt t r t p (I GM ) 1.5 I G 2 A/s 1 s 5...20 s di G /dt I Gon 10 % t r tp (IGM ) t p (I Gon ) t Fig. 8 Recommended gate waveform Fig. 9 Max. peak gate power loss Fig. 10 Reverse recovery charge vs. decay rate of on-state Fig. 11 Peak reverse recovery vs. decay rate of on-state Doc. No. 5SYA1035-04 Aug. 10 page 5 of 7
urn-on and urn-off losses 5SB 13N6500 Fig. 12 urn-on energy, half sinusoidal waves Fig. 13 urn-on energy, rectangular waves Fig. 14 urn-off energy, half sinusoidal waves I (t), V(t) I (t) -di /dt Q rr -I RM t V(t) -V 0 Fig. 15 urn-off energy, rectangular waves otal power loss for repetitive waveforms: P O where P P W 1 I V 0 on ( I f W ) dt off f dv/dt com -V RM Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss Doc. No. 5SYA1035-04 Aug. 10 page 6 of 7
5SB 13N6500 Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PC's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCs and GO, SORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCs and GO, RANSPORAION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for version of documents. ABB Switzerland Ltd Doc. No. 5SYA1035-04 Aug. 10 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors