4V Drive Nch MOSFET RSD8N6 Structure Silicon N-channel MOSFET Features ) Low on-resistance. 2) 4V drive. 3) High power package(cpt3). Application Switching Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 25 RSD8N6 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage V DSS 6 V Gate-source voltage V GSS 2 V Drain current Continuous I D 8 A Pulsed I DP * 6 A Source current Continuous I S 8 A (Body Diode) Pulsed I SP * 6 A Power dissipation P D *2 5 W Channel temperature Tch 5 C Range of storage temperature Tstg 55 to 5 C * Pw s, Duty cycle % *2 T C =25 C Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428>.75.9 Inner circuit () 2.3 6.5 5..9 (2) (3).5 5.5.65 2.3 2.3.5.5. () Gate (2) Drain () (2) (3) (3) Source ESD PROTECTION DIODE 2 BODY DIODE 2.5.8Min. 2.5 9.5 Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c)* 8.33 C / W * T C =25 C 2 ROHM Co., Ltd. All rights reserved. /6 2.8 - Rev.A
Electrical characteristics (Ta = 25 C) Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I GSS - - A V GS = 2V, V DS =V Drain-source breakdown voltage V (BR)DSS 6 - - V I D =ma, V GS =V Zero gate voltage drain current I DSS - - A V DS =6V, V GS =V Gate threshold voltage V GS (th). - 2.5 V V DS =V, I D =ma - 57 8 I D =8A, V GS =V Static drain-source on-state R * - 7 98 m I D =8A, resistance DS (on) - 78 9 I D =8A, V GS =4.V Forward transfer admittance l Y fs l* 4.8 - - S V DS =V, I D =8A Input capacitance C iss - 38 - pf V DS =V Output capacitance C oss - 9 - pf V GS =V Reverse transfer capacitance C rss - 5 - pf f=mhz Turn-on delay time t d(on) * - 9 - ns V DD 3V, I D =4A Rise time t r * - 3 - ns V GS =V Turn-off delay time t d(off) * - 3 - ns R L =7.5 Fall time t f * - - ns R G = Total gate charge Q g * - 9.4 - nc V DD 3V, I D =8A Gate-source charge Q gs * -.8 - nc V GS =V Gate-drain charge Q gd * - 2.3 - nc *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * - -.5 V I s =8A, V GS =V *Pulsed 2 ROHM Co., Ltd. All rights reserved. 2/6 2.8 - Rev.A
Electrical characteristic curves (Ta=25 C) Fig. Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 8 6 4 2 V GS =.V V GS =4.V.2.4.6.8 Drain-Source Voltage : V DS [V] V GS =3.V Fig.3 vs. Drain Current V GS =4.V V GS =V.. Fig.5 vs. Drain Current T a =25 C 8 6 4 2 V GS =.V V GS =4.V 2 4 6 8 Drain-Source Voltage : V DS [V] V GS =3.V Fig.4 vs. Drain Current V GS =V.. T a =25 C Fig.6 vs. Drain Current V GS =4V T a =25 C.... 2 ROHM Co., Ltd. All rights reserved. 3/6 2.8 - Rev.A
Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics V DS =V V DS =V Forward Transfer Admittance Y fs [S] Source Current : I s [A] Switching Time : t [ns]..... T a =25 C Fig.9 Source Current vs. Source-Drain Voltage V GS =V...5..5 2. Source-Drain Voltage : V SD [V] Fig. Switching Characteristics t f t d(off) T a =25 C V DD 3V V GS =V R G =Ω Pulsed t r t d(on) Drain Currnt : I D [A] Gate-Source Voltage : V GS [V].. T a =25 C... 2. 3. 4. 5. 3 25 2 5 5 Gate-Source Voltage : V GS [V] Fig. vs. Gate-Source Voltage 8 6 4 2 I D =8.A I D =4.A 2 4 6 8 V DD =3V I D =8A Pulsed Gate-Source Voltage : V GS [V] Fig.2 Dynamic Input Characteristics.. 2 4 6 8 Total Gate Charge : Q g [nc] 2 ROHM Co., Ltd. All rights reserved. 4/6 2.8 - Rev.A
Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Area Capacitance : C [pf] Normalized Transient Thermal Resistance : r(t) f=mhz V GS =V.. Drain-Source Voltage : V DS [V] C iss C rss C oss Fig.5 Normalized Transient Thermal Resistance v.s. Pulse Width.. Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm) Rth (ch-a) =47.4 C/W Rth (ch-a) (t)=r(t) Rth (ch-a)..... Pulse width : Pw (s) Drain Current : I D [ A ] Operation in this area is limited by R DS(on) (V GS = V) P W = ms. Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm).. Drain-Source Voltage : V DS [ V ] P W = μs P W = ms 2 ROHM Co., Ltd. All rights reserved. 5/6 2.8 - Rev.A
Measurement circuits Pulse width ID RL VDS % 5% 9% 5% D.U.T. VDS % % RG VDD Fig.- Switching Time Measurement Circuit IG(Const.) D.U.T. Fig.2- Gate Charge Measurement Circuit ID RL VDD VDS td(on) ton 9% 9% tr td(off) toff Fig.-2 Switching Waveforms VG Qgs Qgd Qg Fig.2-2 Gate Charge Waveform tf Charge 2 ROHM Co., Ltd. All rights reserved. 6/6 2.8 - Rev.A
Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 2 ROHM Co., Ltd. All rights reserved. R2A