Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package PDP TRENCH IGBT IRGB486PbF IRGS486PbF Key Parameters V CE min 3 V V CE(ON) typ. @ I C = 7A 1.9 V I RP max @ T C = 25 C c 25 A T J max 15 C C PD - 96222 G E C G E C G E n-channel TO-22AB IRGB486PbF D 2 Pak IRGS486PbF G C E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low V CE(on) and low E TM PULSE rating per silicon area which improve panel efficiency. Additional features are 15 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units V GE Gate-to-Emitter Voltage ±3 V I C @ T C = 25 C Continuous Collector Current, V GE @ 15V 7 A I C @ T C = 1 C Continuous Collector, V GE @ 15V 4 I RP @ T C = 25 C Repetitive Peak Current c 25 P D @T C = 25 C Power Dissipation 16 W P D @T C = 1 C Power Dissipation Linear Derating Factor 63 1.3 W/ C T J Operating Junction and -4 to + 15 C T STG Storage Temperature Range Soldering Temperature for 1 seconds Mounting Torque, 6-32 or M3 Screw 3 1lbxin (1.1Nxm) N Thermal Resistance Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) d.8 R θcs Case-to-Sink (flat, greased surface).24 C/W R θja Junction-to-Ambient (typical socket mount) df 4 Weight 6. (.21) g (oz) www.irf.com 1 2/2/9
IRGB/S486PbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV CES Collector-to-Emitter Breakdown Voltag 3 V ΒV CES / T J Breakdown Voltage Temp. Coefficient.29 V/ C 1.29 1.55 1.49 1.67 V CE(on) Static Collector-to-Emitter Voltage 1.9 2.1 V 2.57 2.96 2.27 V GE(th) Gate Threshold Voltage 2.6 5. V Gate-to-Emitter Reverse Leakage -1 g fe Forward Transconductance 29 S Q g Total Gate Charge 65 nc Conditions V GE = V, I CE = 1 ma Reference to 25 C, I CE = 1mA V GE = 15V, I CE = 25A e V GE = 15V, I CE = 4A e V GE = 15V, I CE = 7A e V GE = 15V, I CE = 12A e V GE = 15V, I CE = 7A, T J = 15 C V CE = V GE, I CE = 5µA V GE(th) / T J Gate Threshold Voltage Coefficient -11 mv/ C I CES Collector-to-Emitter Leakage Current 2. 25 µa V CE = 3V, V GE = V 5. V CE = 3V, V GE = V, T J = 1 C 1 V CE = 3V, V GE = V, T J = 15 C I GES Gate-to-Emitter Forward Leakage 1 na V GE = 3V V GE = -3V V CE = 25V, I CE = 25A V CE = 2V, I C = 25A, V GE = 15Ve Q gc Gate-to-Collector Charge 22 t d(on) Turn-On delay time 36 I C = 25A, V CC = 196V t r Rise time 31 ns R G = 1Ω, L=2µH, L S = 2nH t d(off) Turn-Off delay time 112 T J = 25 C t f Fall time 65 t d(on) Turn-On delay time 3 I C = 25A, V CC = 196V t r Rise time 33 ns R G = 1Ω, L=2µH, L S = 2nH t d(off) Turn-Off delay time 145 T J = 15 C t f Fall time 98 t st Shoot Through Blocking Time 1 ns V CC = 24V, V GE = 15V, R G = 5.1Ω L = 22nH, C=.4µF, V GE = 15V 175 E PULSE Energy per Pulse µj V CC = 24V, R G = 5.1Ω, T J = 25 C 1432 L = 22nH, C=.4µF, V GE = 15V V CC = 24V, R G = 5.1Ω, T J = 1 C C iss Input Capacitance 225 V GE = V C oss Output Capacitance 11 pf V CE = 3V C rss Reverse Transfer Capacitance 58 ƒ = 1.MHz, See Fig.13 L C Internal Collector Inductance 5. Between lead, nh 6mm (.25in.) L E Internal Emitter Inductance 13 from package and center of die contact Notes: Half sine wave with duty cycle =.1, ton=2µsec. R θ is measured at T J of approximately 9 C. ƒ Pulse width 4µs; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-1 Material). For recomended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com
I CE (A) I CE (A) I CE (A) I CE (A) I CE (A) IRGB/S486PbF 24 2 16 12 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V 24 2 16 12 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V 8 8 4 4 4 8 12 16 4 8 12 16 Fig 1. Typical Output Characteristics @ 25 C Fig 2. Typical Output Characteristics @ 75 C 24 2 16 12 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V 24 2 16 12 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V 8 8 4 4 4 8 12 16 4 8 12 16 Fig 3. Typical Output Characteristics @ 125 C Fig 4. Typical Output Characteristics @ 15 C 24 1 I C = 25A 2 16 12 T J = 25 C T J = 15 C 8 6 T J = 25 C T J = 15 C 8 4 4 2 2 4 6 8 1 12 14 16 5 1 15 2 V GE (V) V GE (V) Fig 5. Typical Transfer Characteristics Fig 6. V CE(ON) vs. Gate Voltage www.irf.com 3
Energy per Pulse (µj) I C (A) Energy per Pulse (µj) Energy per Pulse (µj) I C, Collector Current (A) Repetitive Peak Current (A) IRGB/S486PbF 8 3 7 6 5 2 4 3 2 1 25 5 75 1 125 15 T C, Case Temperature ( C) Fig 7. Maximum Collector Current vs. Case Temperature 15 14 13 12 11 1 9 8 7 6 5 V CC = 24V L = 22nH C = variable 1 C 4 16 17 18 19 2 21 22 23 I C, Peak Collector Current (A) 25 C 1 ton= 2µs Duty cycle =.1 Half Sine Wave 25 5 75 1 125 15 Case Temperature ( C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 16 14 12 1 8 6 4 L = 22nH C =.4µF 1 C 25 C 2 15 16 17 18 19 2 21 22 23 24 V CE, Collector-to-Emitter Voltage (V) Fig 9. Typical E PULSE vs. Collector Current Fig 1. Typical E PULSE vs. Collector-to-Emitter Voltage 2 V CC = 24V 1 16 L = 22nH t = 1µs half sine C=.4µF 12 1 1 µs 1 µs 8 C=.3µF 1 1ms 4 C=.2µF 25 5 75 1 125 15 T J, Temperature (ºC) 1 1 1 1 1 Fig 11. E PULSE vs. Temperature Fig 12. Forward Bias Safe Operating Area 4 www.irf.com
Capacitance (pf) V GE, Gate-to-Source Voltage (V) IRGB/S486PbF 1 25 I D = 25A 1 Cies 2 15 V DS = 24V V DS = 2V V DS = 15V 1 1 Coes Cres 5 1 1 2 3 2 4 6 8 1 Q G Total Gate Charge (nc) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 Thermal Response ( Z thjc ) D =.5.2.1.1.1.5.2.1 R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri τ C τ Ri ( C/W) τι (sec).84697.38.37426.1255.341867.13676.1 SINGLE PULSE ( THERMAL RESPONSE ) 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 5
IRGB/S486PbF A RG DRIVER C PULSE A L VCC PULSE B B RG Ipulse DUT t ST Fig 16a. t st and E PULSE Test Circuit Fig 16b. t st Test Waveforms V CE Energy I C Current 1K DUT L VCC Fig 16c. E PULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com
IRGB/S486PbF TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information (;$3/( 7+,6,6$1,5) /27&2'( $66(%/('21::,17+($66(%/</,1(& 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( <($5 :((. /,1(& TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7
IRGB/S486PbF D 2 Pak Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak Part Marking Information UCDTDT6IDSA$"TXDUC GPU8P9@'!# 6TT@H7G@9PIXX!! DIUC@6TT@H7G`GDI@G DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPU8P9@ A$"T Q6SUIVH7@S 96U@8P9@ `@6S2! X@@F! GDI@G UCDTDT6IDSA$"TXDUC GPU8P9@'!# For GB Production 6TT@H7G@9PIXX!! DIUC@6TT@H7G`GDI@G DIU@SI6UDPI6G S@8UDAD@S GPBP A$"T Q6SUIVH7@S GPU8P9@ 96U@8P9@ Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com
IRGB/S486PbF D 2 Pak Tape & Reel Information TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) 15.42 (.69) 15.22 (.61) 24.3 (.957) 23.9 (.941) 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) 4 33. (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.4 (1.39) 24.4 (.961) 3 3.4 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information.2/29 www.irf.com 9