P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. Top View The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. SO-8 bsoute Maximum Ratings ( T = 25 C Uness Otherwise Noted) Symbo Maximum Units rain-source Votage V S 30 Gate-Source Votage V GS ± 20 V T = 25 C 6.5 Continuous rain Current I T = 70 C 5.2 Pused rain Current I M 30 Continuous Source Current (iode Conduction) I S 2.5 Maximum Power issipation T = 25 C 2.0 P T = 70 C.3 W Singe Puse vaanche Energy E S 82 mj vaanche Current I R 4.0 Repetitive vaanche Energy E R 0.20 mj Peak iode Recovery dv/dt ƒ dv/dt 5.8 V/ ns Junction and Storage Temperature Range T J, T STG -55 to + 50 C Therma Resistance Ratings Parameter Symbo Limit Units Maximum Junction-to-mbient R θj 62.5 C/W 9/2/02
IRF733 Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 30 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.022 V/ C Reference to 25 C, I = m 0.023 0.029 V GS = 0V, I = 5.8 R S(on) Static rain-to-source On-Resistance Ω 0.032 0.046 V GS = 4.5V, I = 4.7 V GS(th) Gate Threshod Votage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 4 S V S = 5V, I = 5.8 I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µ 25 V S = 24V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage 00 V GS = 20V n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Tota Gate Charge 22 33 I = 5.8 Q gs Gate-to-Source Charge 2.6 3.9 nc V S = 5V Q gd Gate-to-rain ("Mier") Charge 6.4 9.6 V GS = 0V, See Fig. 0 t d(on) Turn-On eay Time 8. 2 V = 5V t r Rise Time 8.9 3 I =.0 ns t d(off) Turn-Off eay Time 26 39 R G = 6.0Ω t f Fa Time 726 R = 5Ω C iss Input Capacitance 650 V GS = 0V C oss Output Capacitance 320 pf V S = 25V C rss Reverse Transfer Capacitance 30 ƒ =.0MHz, See Fig. 9 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.5 (Body iode) showing the I SM Pused Source Current integra reverse G 30 (Body iode) p-n junction diode. V S iode Forward Votage 0.78.0 V T J = 25 C, I S =.7, V GS = 0V ƒ t rr Reverse Recovery Time 45 68 ns T J = 25 C, I F =.7 Q rr Reverse RecoveryCharge 58 87nC di/dt = 00/µs ƒ S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 0mH R G = 25Ω, I S = 4.0. ƒ I S 4.0, di/dt 74/µs, V V (BR)SS, T J 50 C Puse width 300µs; duty cyce 2%. Surface mounted on FR-4 board, t 0sec.
IRF733 I, rain-to-source Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V I, rain-to-source Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics VS 00 00 I, rain-to-source Current () 0 T J = 25 C T = 50 C J V S = 0V 20µs PULSE WITH 3.0 3.5 4.0 4.5 5.0 V GS, Gate-to-Source Votage (V) I S, Reverse rain Current () T J = 50 C 0 T J = 25 C V GS = 0V 0.4 0.6 0.8.0.2.4.6 V S, Source-to-rain Votage (V) Fig 3. Typica Transfer Characteristics Fig 4. Typica Source-rain iode Forward Votage
IRF733 R S(on), rain-to-source On Resistance (Normaized) 2.0 I = 5.8.5.0 0.5 V GS= 0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 T J, Junction Temperature ( C) RS (on), rain-to-source On Resistance (Ω) 0.040 0.036 0.032 0.028 0.024 0.020 V = 4.5V GS V GS = 0V 0 0 20 30 40 I, rain Current () Fig 5. Normaized On-Resistance Vs. Temperature Fig 6. Typica On-Resistance Vs. rain Current RS (on), rain-to-source On Resistance (Ω) 0.2 0.0 0.08 0.06 0.04 0.02 0.00 0 3 6 9 2 5 V GS I = 5.8, Gate-to-Source Votage (V) E S, Singe Puse vaanche Energy (mj) 200 60 20 80 40 I TOP.8 3.2 BOTTOM 4.0 0 25 50 75 00 25 50 Starting T J, Junction Temperature ( C) Fig 7. Typica On-Resistance Vs. Gate Votage Fig 8. Maximum vaanche Energy Vs. rain Current
IRF733 C, Capacitance (pf) 200 900 600 300 V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss Crss V GS, Gate-to-Source Votage (V) 20 6 2 8 4 I = 5.8 V S = 5V 0 0 00 V S, rain-to-source Votage (V) 0 0 0 20 30 40 Q G, Tota Gate Charge (nc) Fig 9. Typica Capacitance Vs. rain-to-source Votage Fig 0. Typica Gate Charge Vs. Gate-to-Source Votage 00 Therma Response (Z thj ) 0 0.50 0.20 0.0 0.05 0.02 0.0 Notes: SINGLE PULSE (THERML RESPONSE). uty factor = t / t 2 2. Peak T J = P M x Z thj + T 0. 0.0000 0.000 0.00 0.0 0. 0 00 t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient
IRF733 Package Outine SO8 Outine 5 E - - - B - 5 8 7 6 5 2 3 4 H 0.25 (.00) M M e 6X e K x 45 θ - C - 0.0 (.004) L 6 C B 8X 8X 8X 0.25 (.00) M C S B S NOTES:. IMENSIONING N TOLERNCING PER NSI Y4.5M-982. 2. CONTROLLING IMENSION : INCH. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS-02. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. IM INCHES MILLIMETERS MIN MX MIN MX.0532.0688.35.75.0040.0098 0.0 0.25 B.04.08 0.36 0.46 C.0075.0098 0.9 0.25.89.96 4.80 4.98 E.50.57 3.8 3.99 e.050 BSIC.27 BSIC e.025 BSIC 0.635 BSIC H.2284.2440 5.80 6.20 K.0.09 0.28 0.48 L 0.6.050 0.4.27 θ 0 8 0 8 RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X Part Marking Information SO8 EXMPLE : THIS IS N IRF70 INTERNTIONL RECTIFIER LOGO F70 TOP 32 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK WFER LOT COE PRT NUMBER (LST 4 IGITS) XXXX BOTTOM
Tape & Ree Information SO8 imensions are shown in miimeters (inches) IRF733 TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) 322 333 EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: ++ 44 883 732020 IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) 475 897 IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: ++ 49 672 96590 IR ITLY: Via Liguria 49, 007 Borgaro, Torino Te: ++ 39 45 0 IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: 8 3 3983 0086 IR SOUTHEST SI: 35 Outram Road, #0-02 Tan Boon Liat Buiding, Singapore 036 Te: 65 22 837 http://www.irf.com/ ata and specifications subject to change without notice. 9/02