FAST SWITCHING THYRISTOR V DRM /V RRM = 2200 2400 V I T(AV) = 2500 A (T C = 80 C) I T(AV) = 3400 A (T C = 55 C) I TSM = 40 ka (T Vj = 125 C) Interdigitated amplifying gate Low on-state switching losses Acceptable for series and parallel connections (low dispersion Q rr, V ТМ, I DRM ) MAXIMUM RATED VALUES Parameter and conditions Repetitive peak off-state voltage, T Vj = - 60 C + 125 C Non-repetitive peak off-state voltage, T Vj = - 40 C + 125 C Repetitive peak reverse voltage, T Vj = - 40 C + 125 C Non- repetitive peak reverse voltage, T Vj = - 40 C + 125 C Symbol Values min. typ. max. V DRM 2200-2400 V DSM 2200-2400 V RRM 2200-2400 V RSM 2300-2500 Repetitive peak off-state current/ Repetitive peak reverse current, I DRM / I RRM - - 200 ma T Vj = 125 C, V D / V R = V DRM / V RRM Max. average on-state current, f = 50 Hz, double side cooled, T C = 80 C T C = 55 C I T(AV) - - 2500 3400 RMS on-state current, f = 50 Hz, T C = 55 C I TRMS - - 5338 Surge non-repetitive current, V R = 0, T Vj = 125 C, t p = 10 ms Units I TSM - - 40 ka Safety factor I 2 t - - 8000 ka 2 s Critical rate of rise of on-state current, V = 0.67V DRM, I FG = 2 A, t r = 0.5 µs, f = 50 Hz, T Vj =125 C Critical rate of rise of off-state voltage V D = 0.67V DRM, T Vj = 125 C (di T /dt) crit - - 1000 A/µs (dv D /dt) crit - - 1000 V/µs Gate power loss, DC P GM - - 4 W Operation junction temperature range T Vj - 60 - + 125 Storage temperature range T stg - 60 - + 50 V A C 27/04/2011 page 1
ELECTRICAL CHARACTERISTICS Maximum peak on-state voltage, I T = 7850 A, T Vj = 25 C On-state threshold voltage, T Vj = 125 C, I T = 3930 11780 A On-state slope resistance, T Vj = 125 C, I T = 3930 11780 A Delay time, V = 0.5V DRM, I T = 2000 A, I FG = 2 A, t r = 0.5 µs, T Vj = 25 C Turn on-time, V = 0.5V DRM, I T = 2000 A, I FG = 2 A, t r = 0.5 µs, T Vj = 25 C Circuit-commutated turn off-time, I T = 2000 A, di T /dt = - 10 A/µs, V R 100 V, V D = 0.67V DRM, (dv D /dt) = 50 V/µs, T Vj = 125 C Recovery charge, di T /dt = - 10 A/µs, T Vj = 125 C, I T = 2000 A, V R 100 V Holding current, V D =12 V, T Vj = 25 C Gate trigger voltage, V D = 12 V, Gate trigger current, V D = 12 V, Gate non-trigger voltage, V D = 0.67V DRM, T Vj = 125 C THERMAL PARAMETERS T Vj = - 60 C T Vj = 25 C T Vj = 125 C T Vj = - 60 C T Vj = 25 C T Vj = 125 C Thermal resistance junction to case (DC), double side cooled anode side cooled cathode side cooled Thermal resistance case to heatsink, double side cooled single side cooled MECHANICAL PARAMETERS V TM - - 2.38 V (TO) - - 1.35 r T - - 0.146 mω t d - - 2.5 t gt - - 3.2 4.0 t q - - 50;63 V µs Q rr - - 500 µas I H - - 300 ma V GT - - 4.0 2.5 2.0 I GT - - 800 400 300 V ma V GD 0.25 - - V R th(j-c) R th(j-c)a - - R th(j-c)c 0.0074 0.0148 0.0148 R th(c-h) - - 0.002 0.004 Weight w - 1.5 - kg Mounting force F 65-80 kn Maximum acceleration (at nominal mounting force) a - - 100 m/s 2 Gate-anode distance on insulator surface D s - 27 - Air strike distance D a - 15 - C/W mm 27/04/2011 page 2
On-state characteristics model V T = A + B I T + C ln(i T + 1) + D Valid for I T = 500 12000 A IT TVj = 125 ºC TVj = 25 ºC A -2 1. 393 B 0.0001963 0.00009477 C 0.544-0.0007692 D -0.022 0.003041 Fig. 1. Maximum on-state characteristics (Limit device, 10 ms, half sine) Analytical function for transient thermal impedance Z thjc = n å i= 1 Ri(1 _ e -t/τ i ) i 1 2 3 4 5 Ri,ºC/W 0.00037 0.0008 0.0018 0.0024 0.00203 Fig. 2. Transient thermal impedance junction to case (DC) τi,s 0.0041 0.013 0.11 0.86 3.56 27/04/2011 page 3
Fig. 3. On-state power loss vs. on-state current (sine) Fig. 4. On-state power loss vs. on-state current (rectangular) Fig. 5. Max. permissible case temperature vs. mean on-state current 27/04/2011 page 4
Fig. 6. Surge on-state current vs. pulse length (half-sine) Fig. 7. Surge on-state current vs. number of pulses (half-sine,10 ms, 50 Hz) Fig. 8. Recovery charge vs. decay rate of on-state current Fig. 9. Peak reverse recovery current vs. decay rate of on-state current 27/04/2011 page 5
Fig. 10. Maximum peak gate power losses Position at fig. 10 Duty factor Gate pulse length, t p, ms Maximum gate pulse power P GM, W 1 1 DC 3 2 2 10 7 3 20 1.0 20 4 40 0.5 25 5 200 0.1 75 Fig. 11. Recommended gate current waveform Fig. 12. Circuit-commutated turn off time vs. operation junction temperature 27/04/2011 page 6
Fig. 13. Delay time vs. amplitude pulse of gate current Fig. 14. Delay time vs. rate of rise pulse of gate current Fig. 15. Circuit-commutated turn off time vs. reverse voltage Fig. 16. Circuit-commutated turn off time vs. amplitude on-state current Fig. 17. Circuit-commutated turn off time vs. decay rate of on-state current Fig. 18. Circuit-commutated turn off time vs. rate of rise of off-state voltage 27/04/2011 page 7
Fig. 19. Sine wave frequency ratings Fig. 20. Sine wave frequency ratings Fig. 21. Sine wave energy per pulse 27/04/2011 page 8
Fig. 22. Square wave frequency ratings Fig. 23. Square wave frequency ratings Fig. 24. Square wave frequency ratings Fig. 25. Square wave frequency ratings 27/04/2011 page 9
Fig. 26. Square wave energy per pulse Fig. 27. Square wave energy per pulse 27/04/2011 page 10
* Another length of outputs G and AC is permissible if required by clients Fig. 28. Device outline drawing (dimensions in mm) JSC reserves the right to change specification without notice. Russia, Mordovia, Saransk, 430001, Proletarskaya str., 126 Теl: +7(8342) 47-04-30 Tel/Fax: +7 (8342) 47-15-01 E-mail: vpruvs@moris.ru, martin@moris.ru Internet: http:/// 27/04/2011 page 11