N-Channel Enhancement Mode MOSFET Features Pin Description 3V/85, R DS(ON) = 3mW (Max.) @ V GS =V R DS(ON) = 4.6mW (Max.) @ V GS =4.5V Reliable and Rugged D G S Lead Free and Green Devices vailable (RoHS Compliant) Top View of TO-252-3 D pplications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information SM33NS ssembly Material Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel (25ea/reel) ssembly Material G : Halogen and Lead Free Device SM33NS U : SM33N XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
bsolute Maximum Ratings (T = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current 2 I DP a I D P D Pulse Drain Current Tested T C =25 C 6 T C = C Continuous Drain Current T C =25 C 85 T C = C 53 Maximum Power Dissipation T C =25 C 5 T C = C 2 W R qjc Thermal Resistance-Junction to Case Steady State 2.5 C/W R qj a I S a E S Thermal Resistance-Junction to mbient t s 5 Steady State 5 C/W valanche Current, Single pulse L=.5mH 3 valanche Energy, Single pulse L=.5mH 225 mj Note a:uis tested and pulse width limited by maximum junction temperature 5 o C (initial temperature T j =25 o C). 2
Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25m 3 - - V BV DSSt I DSS Drain-Source Breakdown Voltage (transient) Zero Gate Voltage Drain Current V GS =V, I D(aval) =3 T case =25 C, t transient =ns 34 - - V V DS =24V, V GS =V - - T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25m.5.9 2.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ± n R DS(ON) b Drain-Source On-state Resistance V GS =V, I DS =3-2.5 3 T J =25 C - 3.8 - V GS =4.5V, I DS =5-3.8 4.6 Gfs Forward Transconductance V DS =5V, I DS =5-5 - S Diode Characteristics V SD b Diode Forward Voltage I SD =2, V GS =V -.8. V trr Reverse Recovery Time - 23 - t a Charge Time - 3 - I DS =3, dl SD /dt=/ms t b Discharge Time - - Q rr Reverse Recovery Charge Dynamic Characteristics c m mw ns - 9 - nc R G Gate Resistance V GS =V,V DS =V,F=MHz -.4 - W C iss Input Capacitance V GS =V, - 245 - C oss Output Capacitance V DS =5V, - 59 - Reverse Transfer Capacitance Frequency=.MHz - 245 - C rss t d(on) Turn-on Delay Time - 8 - t r Turn-on Rise Time V DD =5V, R L =5W, - 4 - I DS =, V GEN =V, t d(off) Turn-off Delay Time R G =6W - 46 - Turn-off Fall Time - 9 - t f Gate Charge Characteristics c Q g Total Gate Charge V DS =5V, V GS =4.5V, I DS =3-8 - Q g Total Gate Charge - 4.3 - Q gth Threshold Gate Charge V DS =5V, V GS =V, - 2.4 - Q gs Gate-Source Charge I DS =3-5 - Q gd Gate-Drain Charge Note b:pulse test; pulse width 3ms, duty cycle 2%. Note c:guaranteed by design, not subject to production testing. -.5 - pf ns nc 3
Typical Operating Characteristics 6 Power Dissipation Drain Current 5 8 Ptot - Power (W) 4 3 2 ID - Drain Current () 6 4 2 T C =25 o C 2 4 6 8 2 4 6 T C =25 o C,V G =V 2 4 6 8 2 4 6 Tj - Junction Temperature ( C) Tj - Junction Temperature ID - Drain Current () Safe Operation rea 4 Rds(on) Limit ms ms ms s DC T C =25 O C... VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 3.. Thermal Transient Impedance..2.5 Single Pulse..2 Duty =.5 Mounted on in 2 pad R qj :5 o C/W E-3 E-4 E-3.. Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 5 V GS = 4,5,6,7,8,9,V 6 ID - Drain Current () 25 75 5 25 3.5V 3V RDS(ON) - On - Resistance (mw) 5 4 3 2 V GS =4.5V V GS =V 2.5V..5..5 2. 2.5 3. VDS - Drain - Source Voltage (V) 2 4 6 8 2 ID - Drain Current () Gate-Source On Resistance Gate Threshold Voltage 4 I DS =3.6 I DS =25m 2.4 RDS(ON) - On - Resistance (mw) 8 6 4 2 Normalized Threshold Voltage.2..8.6.4 2 3 4 5 6 7 8 9.2-5 -25 25 5 75 25 5 VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2..8 V GS = V I DS = 3 Normalized On Resistance.6.4.2..8.6 IS - Source Current () T j =5 o C T j =25 o C.4 R ON @T j =25 o C: 2.5mW.2-5 -25 25 5 75 25 5 Tj - Junction Temperature ( C)...2.4.6.8..2.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 35 3 25 2 5 5 Crss Coss Frequency=MHz Ciss VGS - Gate-source Voltage (V) 9 8 7 6 5 4 3 2 V DS = 5V I DS = 3 5 5 2 25 3 VDS - Drain-Source Voltage (V) 7 4 2 28 35 42 QG - Gate Charge (nc) 6
valanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT IS VDS RG VDD VDD tp IL.W ES tv Switching Time Test Circuit and Waveforms VDS DUT RD VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf 7
Package Information TO-252-3 E b3 c2 E L4 D L3 H D b e c SEE VIEW GUGE PLNE L SETING PLNE.25 VIEW S TO-252-3 Y M B MILLIMETERS INCHES O L MIN. MX. MIN. MX. b3 c c2 D D E 2.39.3 b.5.89 E e H L L3 2.8 4.95 5.46.46.6.46.89 5.33 4.57 6.22 6.35 6.73 3.8.86.94.2.35.95.25.8.24.2.5.35.245.8.236.25.265 2.29 BSC.9 BSC 9.4.4.37.4.9 6. 6..78 L4.2.8.5.35.236.7.89 2.3.35.8.4 8 8 RECOMMENDED LND PTTERN UNIT: mm 8
Carrier Tape & Reel Dimensions OD P P2 P H E OD B T B W F K B SECTION - SECTION B-B d T pplication H T C d D W E F TO-252-3 33.± 2. 5 MIN. 6.4+2. -. 3.+.5 -.2.5 MIN. 2.2 MIN. 6.±.3.75±. 7.5±.5 P P P2 D D T B K 4.±. 8.±. 2.±.5.5+. -..5 MIN..6+. -.4 6.8±.2.4±.2 2.5±.2 (mm) 9
Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness 83 C 6-5 seconds Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, 8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, 8 Hrs, % of VGS max @ Tjmax PCT JESD-22, 2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, 4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-563588 Fax: 886-3-56425