QxxxxLTx Series RoHS Description The Quadrac is an internally triggered Triac designed for AC switching and phase control applications. It is a Triac and DIAC in a single package, which saves user expense by eliminating the need for separate Triac and DIAC components. Standard type devices normally operate in Quadrants I & III triggered from AC line. Alternistor type Quadracs are used in circuits requiring high dv/dt capability. Features & Benefits Agency Approval Agency Agency File Number L Package : E71639 Schematic Symbol RoHS Compliant Glass passivated junctions Voltage capability up to 6 V Applications Surge capability up to 2 A MT2 MT1 T Main Features Symbol Value Unit Excellent for AC switching and phase control applications such as lighting and heating. Typical applications are AC solid-state switches, light dimmers, power tools, home/ brown goods and white goods appliances. Alternistor Quadracs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated package is offered for ease of heat sinking with highest isolation voltage. I T(RMS) 4 to 15 A V DRM / V RRM 4 to 6 V DIAC V BO 33 to 43 V Additional Information Datasheet Resources Samples
Absolute Maximum Ratings Value Symbol Parameter Qxx6LT / Qxx6LTH Qxx8LT / Qxx8LTH Qxx1LT / Qxx1LTH Qxx15LT / Unit I T(RMS) RMS forward current : T C = 95 C Qxx6LT/Qxx8LT/Qxx1LT: T C = 9 C Qxx15LT: T C = 8 C 4 6 8 1 15 A I TSM Peak non-repetitive surge current single half cycle; f = 5Hz; (initial) = 25 C single half cycle; f = 6Hz; (initial) = 25 C 46 65 83 1 167 55 8 1 12 2 A I 2 t I 2 t value for fusing t p = 8.3ms 12.5 26.5 41 6 166 A 2 s di/dt Critical rate-of-rise of on-state current f = 6Hz; =125 C 5 7 1 A/µs I GM Peak gate current = 125 C 1.5 A T stg Storage temperature range -4 to 15 C Operating junction temperature range -4 to 125 C Note: xx = voltage Electrical Characteristics ( = 25 C, unless otherwise specified) Standard Quadrac Value Symbol Test Conditions Qxx6LT Qxx8LT Qxx1LT Qxx15LT Unit I H I T = 2mA (initial) MAX. 4 5 6 6 7 ma dv/dt V D = V DRM ; gate open; =1 C V D = V DRM ; gate open; =125 C MIN. MIN. 4V 75 15 175 2 3 6V 5 125 15 175 2 4V 5 1 12 15 2 6V 5 85 1 12 15 V/μs dv/dt(c) di/dt(c) =.54 x I T(rms) / ms; = 125 C MIN. 3 4 V/μs t gt (note 1) TYP. 3 μs (1) Reference test circuit in figure 1 and waveform in figure 11; C T =.1μF with.1μs rise time. Note: xx = voltage Electrical Characteristics ( = 25 C, unless otherwise specified) Alternistor Quadrac Value Symbol Test Conditions Qxx6LTH Qxx8LTH Qxx1LTH Unit I H I T = 2mA (initial) MAX. 5 5 6 7 ma dv/dt V D = V DRM ; gate open; =1 C V D = V DRM ; gate open; =125 C MIN. MIN. 4V 575 925 6V 425 775 4V 45 7 6V 35 6 V/μs dv/dt(c) di/dt(c) =.54 x I T(rms) / ms; = 125 C MIN. 25 3 V/μs t gt (note 1) TYP. 3 μs (1) Reference test circuit in figure 1 and waveform in figure 11; C T =.1μF with.1μs rise time. Note: xx = voltage
Trigger DIAC Specifications Symbol Test Conditions Value Unit ΔV BO Breakover Voltage Symmetry MAX. 3 V V BO MIN. 33 Breakover Voltage, forward and reverse V MAX. 43 [ΔV±] Dynamic Breakback Voltage, forward and reverse (note 1) MIN. 5 V I BO Peak Breakover Current MAX. 25 ua C T Trigger Firing Capacitance MAX..1 µf (1) Reference test circuit in figure 1 and waveform in figure 11. Static Characteristics Symbol Test Conditions Value Unit V TM I T = 1.41 x I T(rms) A; t p = 38μs MAX. 1.6 V = 25 C 1 I DRM / I RRM V DRM / V RRM = 1 C MAX. 5 µa = 125 C 2 Thermal Resistances R θ(j-c) Symbol Parameter Value Unit Junction to case (AC) 3.6 Qxx6LT / Qxx6LTH Qxx8LT / Qxx8LTH Qxx1LT / Qxx1LTH Qxx15LT / R θ(j-a) Junction to ambient 5 C/W Note : xx = voltage 3.3 2.8 2.6 2.1 C/W
Figure 1: Normalized DC Holding Current vs. Junction Temperature Figure 2: On-State Current vs. On-State Voltage (Typical) (4A) Ratio of I H /I H ( = 25 C) 2. 1.5 1..5. -4-15 1 35 6 85 11 Junction Temperature ( ) -- C Instantaneous On-state Current (i T ) Amps 16 14 = 25 C 12 1 8 6 4 2.7.8.9 1. 1.1 1.2 1.3 1.4 1.5 1.6 Instantaneous On-state Voltage (v T ) Volts Figure 3: On-State Current vs. On-State Voltage (Typical) (6A to 15A) Figure 4: Power Dissipation vs. RMS On-State Current (Typical) (4A) Instantaneous On-state Current (i T ) Amps 5 45 4 35 3 25 2 15 1 5 = 25 C Qxx15LT Qxx6LT/Qxx6LTH Qxx8LT/Qxx8LTH Qxx1LT/Qxx1LTH.7.8.9 1. 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Instantaneous On-state Voltage (v T ) Volts Average On-State Power Dissipation [P D(AV) ] - (Watts) 4. 3.5 3. 2.5 2. 1.5 1. CURRENT WAVEFORM: Sinusoidal.5 LOAD: Resistive or Inductive CONDUCTION ANGLE: 36...5 1. 1.5 2. 2.5 3. 3.5 4. RMS On-State Current [I T(RMS) ] - (Amps) Figure 5: Power Dissipation vs. RMS On-State Current (Typical) (6A to 15A) Figure 6: Maximum Allowable Case Temperature vs. RMS On-State Current 18 13 Average On-State Power Dissipation [P D(AV) ] - (Watts) 16 14 12 1 8 6 4 2 Qxx6LT/Qxx6LTH Qxx8LT/Qxx8LTH Qxx1LT/Qxx1LTH Qxx15LT CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 36 Maximum Allowable Case Temperature (T C ) - C 12 11 1 9 8 Qxx6LT Qxx6LTH Qxx8LT Qxx8LTH CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 18 Qxx1LT Qxx1LTH Qxx15LT 2 4 6 8 1 12 14 16 RMS On-State Current [I T(RMS) ] - (Amps) 7 2 4 6 8 1 12 14 16 RMS On-State Current [I T(RMS) ] - Amps
Figure 7: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) Amps 1 1 1 Qxx15LT/ Qxx6LT/Qxx6LTH Qxx1LT/Qxx1LTH Qxx8LT/Qxx8LTH Supply Frequency: 6Hz Sinusoidal Load: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specific Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 1 1 1 1 1 Surge Current Duration -- Full Cycles Note: xx = voltage Figure 8: DIAC V BO Change vs. Junction Temperature Figure 9: Test Circuit 4% 2% R L V BO Change -- % % -2% -4% 12 V 6 Hz D.U.T. MT2-6% T -8% 1% -4-2 2 4 6 8 1 12 V C C T =.1 µf MT1 Junction Temperature ( ) -- C Figure 1: Test Circuit Waveform Figure 11: Peak Output Current vs Triggering Capacitance (Per Figure 9) V C +V BO 3 -V BO I L +I PK V+ V- t Peak Output Current (I PK ) ma 25 2 15 1 5 Typical (35V Device) t.1.2.3.4.5.6.7.8.9 1. -I PK Typical pulse base width is 1μs Triggering Capacitance (C T ) μf
Temperature Teccor brand Thyristors Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 15 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 2 C - Time (min to max) (t s ) 6 18 secs Average ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) 6 15 seconds Peak Temperature (T P ) 26 +/-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) 2 4 seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 28 C Physical Specifications Terminal Finish Body Material Lead Material Design Considerations 15 Matte Tin-plated UL Recognized epoxy meeting flammability classification 94v- Copper Alloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Environmental Specifications Test High Temperature Voltage Blocking Temperature Cycling Biased Temperature & Humidity High Temp Storage Low-Temp Storage Thermal Shock Autoclave (Pressure Cooker Test) Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-75: Method 14, Condition A Rated V DRM (VAC-peak), 125 C, 18 hours MIL-STD-75: Method 151-4 C to 15 C, 15-minute dwell, 1 cycles EIA/JEDEC: JESD22-A11 32VDC, 85 C, 85%RH, 18 hours MIL-STD-75: Method 131 15 C, 18 hours -4 C, 18 hours MIL-STD-75: Method 156 C to 1 C, 5-minute dwell, 1-second transfer, 1 cycles EIA/JEDEC: JESD22-A12 121 C, 1%RH, 2atm, 168 hours MIL-STD-75: Method 231 26 C, 1 seconds ANSI/J-STD-2, Category 3, Test A MIL-STD-75: Method 236, Condition E
Dimensions TO-22AB (L-Package) Isolated Mounting Tab E A T C MEASURING POINT O P 8.13.32 Dimension Inches Millimeters Min Max Min Max B C D AREA (REF.).17 in 2 7.1.276 13.36.526 A.38.42 9.65 1.67 B.15.115 2.67 2.92 C.23.25 5.84 6.35 D.59.62 14.99 15.75 F E.142.147 3.61 3.73 F.11.13 2.79 3.3 G L H R K J MT1 MT2 T (Trigger) N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (.94 Nm). G.54.575 13.72 14.61 H.25.35.64.89 J.195.25 4.95 5.21 K.95.15 2.41 2.67 L.6.75 1.52 1.91 M.85.95 2.16 2.41 N.18.24.46.61 O.178.188 4.52 4.78 P.45.6 1.14 1.52 R.38.48.97 1.22 Product Selector Part Number Voltage 4V 6V 8V 1V Type Package X X Quadrac TO-22L Qxx6LT X X Quadrac TO-22L Qxx6LTH X X Alternistor Quadrac TO-22L Qxx8LT X X Quadrac TO-22L Qxx8LTH X X Alternistor Quadrac TO-22L Qxx1LT X X Quadrac TO-22L Qxx1LTH X X Alternistor Quadrac TO-22L Qxx15LT X X Quadrac TO-22L X X Alternistor Quadrac TO-22L Note: xx = Voltage
Teccor brand Thyristors Packing Options Part Number Marking Weight Packing Mode Base Quantity 2.2 g Bulk 5 TP 2.2 g Tube 5 (5 per tube) Qxx6LT Qxx6LT 2.2 g Bulk 5 Qxx6LTTP Qxx6LT 2.2 g Tube 5 (5 per tube) Qxx6LTH Qxx6LTH 2.2 g Bulk 5 Qxx6LTHTP Qxx6LTH 2.2 g Tube 5 (5 per tube) Qxx8LT Qxx8LT 2.2 g Bulk 5 Qxx8LTTP Qxx8LT 2.2 g Tube 5 (5 per tube) Qxx8LTH Qxx8LTH 2.2 g Bulk 5 Qxx8LTHTP Qxx8LTH 2.2 g Tube 5 (5 per tube) Qxx1LT Qxx1LT 2.2 g Bulk 5 Qxx1LTTP Qxx1LT 2.2 g Tube 5 (5 per tube) Qxx1LTH Qxx1LTH 2.2 g Bulk 5 Qxx1LTHTP Qxx1LTH 2.2 g Tube 5 (5 per tube) Qxx15LT Qxx15LT 2.2 g Bulk 5 Qxx15LTTP Qxx15LT 2.2 g Tube 5 (5 per tube) 2.2 g Bulk 5 TP 2.2 g Tube 5 (5 per tube) Note: xx = Voltage Part Numbering System Q 6 1 L T H 56 Part Marking System TO-22 AB - (L Package) DEVICE TYPE Q: Quadrac LEAD FORM DIMENSIONS xx: Lead Form Option VOLTAGE RATING 4: 4V 6: 6V TRIAC TYPE (blank): Standard Triac H: Alternistor Triac Q61LTH YMXXX CURRENT RATING 4: 4A 6: 6A 8: 8A 1: 1A 15: 15A Trigger T: Internal Diac (33V 43V) PACKAGE TYPE L: TO-22 (Isolated) Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code