N & P Pair Enhancement Mode MOSFET

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Transcription:

DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES PIN CONFIGURATION( TSOT 23-6P ) N-Channel 30V/2.8A,RDS(ON)= 60mΩ@VGS=10V 30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT 23-6P package design PART MARKING 2014/08/20 Ver.6 Page 1

PIN DESCRIPTION Pin Symbol Description 1 G1 Gate 1 2 S2 Source 2 3 G2 Gate 2 4 D2 Drain 2 5 S1 Source 1 6 D1 Drain1 ORDERING INFORMATION Part Number Package Part Marking SPC6602TS26RGB TSOT-23-6P 02YW Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPC6602TS26RGB : Tape Reel ; Pb Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Symbol N-Channel Typical P-Channel Drain-Source Voltage VDSS 30-30 V Gate Source Voltage VGSS ±20 ±20 V Continuous Drain Current(TJ=150 ) TA=25 ID 2.8-2.8 TA=70 2.3-2.1 Pulsed Drain Current IDM 10-8 A Continuous Source Current(Diode Conduction) IS 1.25-1.4 A Power Dissipation TA=25 PD 1.15 TA=70 0.75 Operating Junction Temperature TJ -55/150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient T 10sec 50 52 RθJA Steady State 90 90 /W Unit A W 2014/08/20 Ver.6 Page 2

ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V(BR)DSS Voltage VGS=0V,ID=-250uA P-Ch -30 VDS=VGS,ID=250uA N-Ch 1 3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA P-Ch 1-3 V Gate Leakage Current IGSS VDS=0V,VGS=±20V N-Ch ±100 VDS=0V,VGS=±20V P-Ch ±100 na VDS= 24V,VGS=0V N-Ch 1 Zero Gate Voltage Drain VDS=-24V,VGS=0V P-Ch -1 IDSS Current VDS= 24V,VGS=0V TJ=55 N-Ch 10 ua VDS=-24V,VGS=0V TJ=55 P-Ch -10 On-State Drain Current ID(on) VDS 5V,VGS = 10V N-Ch 6 VDS -5V,VGS =-10V P-Ch -6 A VGS= 10V,ID= 2.8A N-Ch 0.043 0.060 VGS=-10V,ID=-2.8A P-Ch 0.088 0.105 Drain-Source On-Resistance RDS(on) VGS= 4.5V,ID= 2.3A N-Ch 0.056 0.080 Ω VGS=-4.5V,ID=-2.5A P-Ch 0.118 0.135 Forward Transconductance gfs VDS=4.5V,ID=2.8A N-Ch 4.6 VDS=-10V,ID=-2.8A P-Ch 4 S Diode Forward Voltage VSD IS= 1.25A,VGS =0V N-Ch 0.8 1.2 IS=-1.2A,VGS =0V P-Ch -0.8-1.2 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Turn-Off Time Qg Qgs Qgd td(on) tr td(off) tf N-Channel VDS=15,VGS=4.5V, ID 2.0A P-Channel VDS=-15V,VGS=-4.5V, ID -2.0A N-Channel VDD=15, RL=10Ω VGEN=10V, RG=3Ω P-Channel VDD=-15V, RL=15Ω VGEN=-10V, RG=3Ω N-Ch 4.5 10 P-Ch 5.8 10 N-Ch 0.8 P-Ch 0.8 N-Ch 1.0 P-Ch 1.5 N-Ch 8 20 P-Ch 9 20 N-Ch 12 30 P-Ch 9 20 N-Ch 17 35 P-Ch 18 35 N-Ch 8 20 P-Ch 6 20 nc ns 2014/08/20 Ver.6 Page 3

TYPICAL CHARACTERISTICS ( N-Channel ) 2014/08/20 Ver.6 Page 4

TYPICAL CHARACTERISTICS 2014/08/20 Ver.6 Page 5

TYPICAL CHARACTERISTICS 2014/08/20 Ver.6 Page 6

TYPICAL CHARACTERISTICS ( P-Channel ) 2014/08/20 Ver.6 Page 7

TYPICAL CHARACTERISTICS ( P-Channel ) 2014/08/20 Ver.6 Page 8

TYPICAL CHARACTERISTICS ( P-Channel ) 2014/08/20 Ver.6 Page 9

TSOT-23-6P PACKAGE OUTLINE 2014/08/20 Ver.6 Page 10

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. The SYNC Power logo is a registered trademark of SYNC Power Corporation 2004 SYNC Power Corporation Printed in Taiwan All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 http://www.syncpower.com 2014/08/20 Ver.6 Page 11