Schematic V F HCPL-7601/11 SHIELD. USE OF A 0.1 µf BYPASS CAPACITOR CONNECTED BETWEEN PINS 5 AND 8 IS REQUIRED (SEE NOTE 1).

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CMOS/TTL Compatible, Low Input Current, High Speed, High CMR Optocoupler Technical Data HCPL-7601 HCPL-7611 Features Low Input Current Version of HCPL-2601/11 and 6N137 Wide Input Current Range: I F = 2 ma to 10 ma CMOS/TTL Compatible Guaranteed Switching Threshold: I F = 2 ma (max.) Internal Shield for High Common Mode Rejection (CMR) HCPL-7601: 5,000 V/µs (Typical) at V CM = 50 V, I F = 4 ma HCPL-7611: 15,000 V/µs (Typical) at V CM = 1000 V, I F = 4 ma High Speed: 10 Mbd Typical Guaranteed ac and dc Performance over Temperature: -40 C to 85 C VDE 0884 Approval: V IORM = 600 V RMS UL Recognized: 3750 V RMS, 1 minute CSA Accepted Low Supply Current Requirement Low T PSK : 40 ns Guaranteed Applications Isolated Line Receiver Simplex/Multiplex Data Transmission Programmable Logic Controllers Computer-Peripheral Interface Microprocessor System Interface Schematic HCPL-7601/11 SHIELD Digital Isolation for A/D, D/A Conversion Switching Power Supply Instrument Input/Output Isolation Ground Loop Elimination Pulse Transformer Replacement I F ICC V CC 2+ 8 I O V O 6 V F 3- USE OF A 0.1 µf BYPASS CAPACITOR CONNECTED BETWEEN PINS 5 AND 8 IS REQUIRED (SEE NOTE 1). GND 5 TRUTH TABLE (POSITIVE LOGIC) LED ON OFF OUTPUT L H CAUTION: The small device geometries inherent to the design of this bipolar component increase the component s susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

2 Description The HCPL-7601/11 is a low input current version of the HCPL-2601/11 and 6N137 (without enable). The optically coupled gates combine an AlGaAs high-efficiency light emitting diode and an integrated high gain photon detector to create a low input current device for low power applications. The output of the detector IC is an open collector Schottky-clamped transistor. The internal shield provides a guaranteed common mode transient immunity specification of 10,000 V/µs (HCPL-7611). This unique design provides maximum ac and dc circuit isolation while achieving CMOS and TTL compatibility. The optocoupler ac and dc operational parameters are guaranteed from -40 C to 85 C with no derating required allowing trouble free system performance. This product is suitable for high speed logic interfacing, input/output buffering, and applications that require low input-current switching levels. The HCPL-7601/11 family offers many features that are especially beneficial to system designers. The low input current requirements and guaranteed switching threshold (2 ma max.) allows the LED to be driven directly by any standard high-speed CMOS gate (e.g. 74HC/HCT). This will simplify designs by eliminating the need for special driver circuits and result in lower part counts and greater system reliability while freeing up valuable printed circuit board space. The wide current input range of 2 ma to 10 ma and guaranteed ac and dc performance over a wide temperature range will also simplify designs. Low supply current requirements mean lower power dissipation allowing for the use of a smaller, less expensive power supply. The high speed (10 Mbd typ.) and low propagation delay skew (T psk 40 ns guaranteed) allow for easier design of high speed parallel applications. The world-wide regulatory approval (UL/CSA/VDE 0884) will facilitate the acceptance of the end product in international markets. Regulatory Information The HCPL-7601 and HCPL-7611 have been approved by the following organizations: UL Approved under UL 1577, component recognition FILE E55361). VDE Approved according to VDE 0884/08.87. This optocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Can be used for safe electrical separation between ac mains and SELV (safety extra-low voltage) in equipment according to the following specifications: DIN VDE 0804/05.89 DIN VDE 0160/05.88 Reference voltage (VDE 011b Tab 4): 6 Vac. CSA Approved under CSA22.2 No. 0 - General Requirements, Canadian Electrical Code, Part II; and CSA Component Acceptance Notice #5, File CA 88324.

3 Absolute Maximum Ratings (No Derating Required up to 85 C) Storage Temperature... -55 C to +125 C Operating Temperature... -40 C to +85 C Lead Solder Temperature...260 C for 10 s (1.6 mm below seating plane) Average Input Current - I F (See Note 2.)... 20 ma Reverse Input Voltage - V R... 3 V Supply Voltage - V CC... 7 V (1 Minute Maximum) Output Collector Current - I O... 50 ma Output Collector Power Dissipation... 85 mw Output Collector Voltage - V O *... 7 V Total Package Power Dissipation... 250 mw *Selection for higher output voltage up to 20 V is available. Recommended Operating Conditions Parameter Symbol Min. Max. Units Input Voltage, Low Level V FL 0 0.8 V Input Current, High Level I FH 2 10 ma Supply Voltage, Output V CC 4.5 5.5 V Fan Out @ R L = 1 kω N 5 TTL Loads Operating Temperature T A -40 85 C Output Pull-up Resistor R L 3 4 k Ω

4 Package Outline Drawing Standard DIP Package 9.80 ± 0.25 (0.386 ± 0.010) 8 7 6 A 7601 YYWW 5 TYPE NUMBER* DATE CODE 6.10 (0.240) 6.60 (0.260) 7.36 (0.290) 7.88 (0.310) 0.18 (0.007) 0.33 (0.013) 5 TYP. PIN ONE 1 2 3 4 1.78 (0.070) MAX. 1.19 (0.047) MAX. DIMENSIONS IN MILLIMETERS AND (INCHES). 4.70 (0.185) MAX. PINOUT DIAGRAM PIN ONE 2.92 (0.115) MIN. 0.51 (0.020) MIN. N/C ANODE 1 2 8 7 V CC N/C 0.76 (0.0) 1.24 (0.049) 0.65 (0.025) MAX. 2.28 (0.090) 2.80 (0.110) CATHODE N/C 3 4 6 5 V OUT GND *TYPE NUMBER FOR: HCPL-7601 = 7601 HCPL-7611 = 7611 Gull Wing Surface Mount Option 0* 8 7 6 5 DIMENSIONS IDENTICAL TO STANDARD DIP EXCEPT AS NOTED. 1 2 3 4 9.65 ± 0.25 (0.380 ± 0.010) 7.62 ± 0.25 (0.0 ± 0.010) 0.255 ± 0.075 (0.010 ± 0.003) 0.51 ± 0.1 (0.020 ± 0.005) 0.635 ± 0.25 (0.025 ± 0.010) 12 NOM. * REFER TO OPTION 0 DATA SHEET FOR MORE INFORMATION.

5 VDE 0884 Insulation Characteristics Description Symbol Characteristics Unit Installation classification per DIN VDE 0109*/12.83, Table 1 for rated mains voltage 0 V RMS for rated mains voltage 600 V RMS I-IV I-III Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0109/12.83)* 2 Maximum Working Insulation Voltage V IORM 600 V RMS 848 V peak Input to Output Test Voltage, Method b** V PR = 1.6 X V IORM V PR 960 V RMS Production test with t P = 1 sec, Partial discharge < 5 pc 1357 V peak Input to Output Test Voltage, Method a** V PR = 1.2 X V IORM V PR 720 V RMS Production test with t P = 60 sec, Partial discharge < 5 pc 1018 V peak Highest Allowable Overvoltage** (Transient Overvoltage, t TR = 10 sec) V TR 6000 V peak Safety-limiting values (Maximum values allowed in the event of a failure, also see Figure 16) Case Temperature T SI 175 C Input Power P SI,Input 80 mw Output Power P SI,Output 250 mw Insulation Resistance at T SI, V IO = 500 V R IS 10 11 Ω * This part may also be used in Pollution Degree 3 environments where the rated mains voltage is 0 V RMS (per DIN VDE 0190/12.83). **Refer to the front of the optocoupler section of the current Optoelectronics Designers Catalog for a more detailed description of VDE 0884 and other product safety regulations. Insulation Related Specifications Parameter Symbol Value Units Conditions Minimum External Clearance L (IO1) 7.0 mm Measured from input terminals (External Air Gap) to output terminals Minimum External Creepage L (IO2) 8.0 mm Measured from input terminals (External Tracking) to output terminals Minimum Internal Clearance 0.5 mm Through insulation distance (Internal Plastic Gap) from conductor to conductor Comparative Tracking Index CTI 175 V DIN IEC 112/VDE 3 P1 Isolation Group (per DIN VDE 0109) IIIa Material Group

6 Electrical Specifications Over recommended temperature (T A = -40 C to 85 C) unless otherwise specified. (See note 1.) Parameter Symbol Min. Typ.* Max. Units Test Conditions Fig. Note Input Threshold I TH 1 2 ma V CC = 5.5 V, I O 13 ma, 5 Current V O = 0.6 V High Level Output I OH 3 100 µa V CC = 5.5 V, V O = 5.5 V 1 Current V FL = 0.8 V Low Level Output V OL 0.35 0.6 V V CC = 5.5 V, I F = 2 ma, 2, 4, Voltage I OL (Sinking) = 13 ma 6 High Level Supply I CCH 4.75 7 ma V CC = 5.5 V, I F = 0 ma Current Low Level Supply I CCL 6 10 ma V CC = 5.5 V, I F = 4 ma Current Input Forward V F 1.2 1.5 1.85 V I F = 4 ma 3 Voltage Input Reverse BV R 3 V I R = 100 µa Breakdown Voltage Input Capacitance C IN 72 pf V F = 0, f = 1 MHz Input Diode V F / T A -1.6 mv/ C I F = 4 ma 3 Temperature Coefficient Input-Output V ISO 3750 V RMS RH 50%, t = 1 min. 3, 9 Insulation T A = 25 C Resistance R I-O 10 12 10 13 Ω T A = 25 C V I-O = 500 V 3 (Input-Output) 10 11 T A = 100 C Capacitance C I-O 0.6 pf f = 1 MHz, V I-O = 0 V dc 3 (Input-Output) *All typicals at T A = 25 C,.

7 Switching Specifications Over recommended temperature (T A = -40 C to 85 C),, C L = 15 pf Parameter Symbol Device Min. Typ.* Max. Unit Test Conditions Fig. Note Propagation t PLH 25 58 75 T A = 25 C I F = 2 ma, 7, 8, 4, 10 Delay Time 100 R L = 1 kω 10 to High 25 55 75 T A = 25 C I F = 4 ma Output 100 R L = 350 Ω Level Propagation 35 73 100 ns T A = 25 C I F = 2 ma 7, 9, 5, 10 Delay Time t PHL 120 R L = 1 kω 10 to Low 25 57 75 T A = 25 C I F = 4 ma Output 100 R L = 350 Ω Level Pulse Width t PHL -t PLH 16 55 I F = 2 ma R L = 1 kω 11, 4, 5 Distortion 4 40 I F = 4 ma R L = 350 Ω 12 Propagation t PSK 75 I F = 2 ma R L = 1 kω 6, 10 Delay Skew 40 I F = 4 ma R L = 350 Ω Output Rise t rise 58 I F = 2 ma R L = 1 kω 13 Time 24 I F = 4 ma R L = 350 Ω (10% - 90%) Output Fall t fall 10 I F = 2-4 ma R L = 350-1 kω 13 Time (10% - 90%) Common CM H HCPL- 1,000 5,000 V CM = 50 V I F = 0 ma 14 7 Mode 7601 V o(min) = 2 V Transient R L = 350-1 kω Immunity at HCPL- 10,000 15,000 V CM = 1000 V T A = 25 C High Output 7611 Level Common CM L HCPL- 1,000 5,000 V/µs I F = 2-4 ma V o(max) = 0.8 V 14 8 Mode 7601 R L = 350-1 kω T A = 25 C Transient V CM = 50 V Immunity at HCPL- 2,000 5,000 I F = 2 ma Low Output 7611 R L = 1 kω Level V CM = 1000 V 10,000 15,000 I F = 4 ma R L = 350 Ω V CM = 1000 V *All typicals at T A = 25 C,.

8 Notes: 1. Bypassing of the power supply line is required with a 0.1 µf ceramic disc capacitor adjacent to each optocoupler, as illustrated in Figure 15. Total lead length between both ends of the capacitor and the isolator pins should not exceed 10 mm. 2. Peaking circuits may produce transient input currents up to 50 ma, 50 ns maximum pulse width, provided average current does not exceed 20 ma. 3. Device considered a two terminal device: pins 1, 2, 3, and 4 shorted together, and pins 5, 6, 7, and 8 shorted together. 4. The t PLH propagation delay is measured from the 50% point on the trailing edge of the input pulse to the 1.5 V point on the trailing edge of the output pulse. 5. The t PHL propagation delay is measured from the 50% point on the leading edge of the input pulse to the 1.5 V point on the leading edge of the output pulse. 6. t PSK is equal to the worst case difference in t PHL and/or t PLH that will be seen between units at any given temperature within the operating condition range. 7. CM H is the maximum tolerable rate of rise of the common mode voltage to assure that the output will remain in a high logic state (i.e., V OUT > 2.0 V). 8. CM L is the maximum tolerable rate of fall of the common mode voltage to assure that the output will remain in a low logic state (i.e., V OUT < 0.8 V). This specification assumes that good board layout procedures were followed to reduce the effective input/output capacitance as shown in Figure 15. 9. In accordance with UL and CSA requirements, each optocoupler is proof tested by applying an insulation test voltage 5000 Vrms for one second (leakage detection current limit, I I-O 5 µa). 10. AC performance at I F = 4 ma is approximately equivalent to the HCPL-2601/11 at I F = 7.5 ma for comparison purposes. I OH HIGH LEVEL OUTPUT CURRENT µa 15 10 5 V CC = 5.5 V V O = 5.5 V V IN = 0.8 V 0-60 -40-20 0 20 40 60 80 100 V OL LOW LEVEL OUTPUT VOLTAGE V 0.6 0.5 0.4 0.3 I O = 16.0 ma I O = 13.0 ma V CC = 5.5 V I F = 2-4 ma 0.2-60 -40-20 0 20 40 60 80 100 I F INPUT FORWARD CURRENT A 10-1 T A = 25 C 10-2 10-3 T A = 85 C T A = -40 C 10-4 10-5 10-6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F INPUT FORWARD VOLTAGE V Figure 1. High Level Output Current vs. Temperature. Figure 2. Low Level Output Voltage vs. Temperature. Figure 3. Typical Input Forward Current vs. Input Forward Voltage. V O OUTPUT VOLTAGE V 5.0 4.0 R L = 350 Ω R L = 1 kω 3.0 R L = 4 kω 2.0 1.0 0 0 0.5 1.0 1.5 2.0 I TH INPUT THRESHOLD CURRENT ma 2.5 2.0 1.5 1.0 0.5 V CC = 5.0 V V O = 0.6 V I O = 13.0 ma 0-60 -40-20 0 20 40 60 80 100 I OL LOW LEVEL OUTPUT CURRENT ma 55 50 45 40 35 V OL = 0.6 V I F = 2 ma I F = 4 ma -50 - -10 0 10 50 70 90 I F FORWARD INPUT CURRENT ma Figure 4. Output Voltage vs. Forward Input Current. Figure 5. Input Threshold Current vs. Temperature. Figure 6. Low Level Output Current vs. Temperature.

9 PULSE GEN. Z O = 50 Ω t f = t r = 5 ns INPUT MONITORING NODE I F R M INPUT I F OUTPUT V O 1 V CC 8 2 7 3 6 4 5 GND *C L IS APPROXIMATELY 15 pf WHICH INCLUDES PROBE AND STRAY WIRING CAPACITANCE. t PHL t PLH 0.1µF BYPASS I F *C L 50% I F 1.5 V +5 V R L OUTPUT V O MONITORING NODE t PLH PROPAGATION DELAY ns 120 110 100 90 80 70 60 50 40 T A = 25 C I F = 2-4 ma, R L = 4 kω I F = 2-4 ma, R L = 1 kω I F = 2-4 ma, R L = 350 Ω -50 - -10 0 10 50 70 90 Figure 7. Test Circuit for t PHL and t PLH. Figure 8. t PLH Propagation Delay vs. Temperature. t PHL PROPAGATION DELAY ns 100 90 80 70 60 50 40 R L = 350 4 kω T A = 25 C I F = 2 ma I F = 4 ma -50 - -10 0 10 50 70 90 t P PROPAGATION DELAY ns 120 110 100 90 80 70 60 50 40 T PLH @ R L = 4 kω T PHL @ R L = 350 4 kω T PLH @ R L = 350 Ω T A = 25 C T PLH @ R L = 1 kω 1 2 3 4 5 6 7 8 9 10 11 PULSE WIDTH DISTORTION (t PHL - t PLH ) ns 15 0-15 - -45 I F = 2 ma, R L = 350 Ω I F = 2 ma, R L = 1 kω I F = 4 ma, R L = 350 Ω I F = 4 ma, R L = 1 kω I F = 2 ma, R L = 4 kω I -60 F = 4 ma, R L = 4 kω -50 - -10 0 10 50 70 90 I F INPUT CURRENT ma Figure 9. t PHL Propagation Delay vs. Temperature. Figure 10. Propagation Delay vs. Input Current. Figure 11. Pulse Width Distortion vs. Temperature. PULSE WIDTH DISTORTION (t PHL - t PLH ) ns 20 10 0-10 -20 - -40-50 -60 T A = 25 C R L = 350 Ω R L = 1 kω R L = 4 kω -70 0 2 4 6 8 10 12 t RISE, t FALL RISE, FALL TIME ns 3 320 310 0 290 60 40 20 V CC = 5.0 V I F = 2 4 ma R L = 4 kω R L = 1 kω R L = 350 Ω t FALL t RISE R L = 350 Ω, 1 kω, 4 kω 0-60 -40-20 0 20 40 60 80 100 I F INPUT CURRENT ma Figure 12. Pulse Width Distortion vs. Input Current. Figure 13. Rise and Fall Time vs. Temperature.

10 IF 1 V CC 8 +5 V V FF B 0.1 µf 2 7 BYPASS R L A OUTPUT V O 3 6 MONITORING NODE 4 5 GND V CM + _ PULSE GENERATOR Z O = 50 Ω V CM 0 V 5 V V O V O 0.35 V V CM (PEAK) SWITCH AT A: I F = 0 ma V O (MIN.) SWITCH AT B: I F = 2 or 4 ma V O (MAX.) CM H CM L Figure 14. Test Circuit for Common Mode Transient Immunity and Typical Waveforms. 250 220 200 0.1µF V CC BUS OUTPUT GND BUS PSI, INPUT mw 50 40 20 10 150 100 50 0 0 0 25 50 75 100 125 140 150 175 PSI, OUTPUT mw 10 mm MAX. (SEE NOTE 1) Figure 15. Recommended Printed Circuit Board Layout. Figure 16. Dependence of Safety- Limiting Data on Ambient Temperature.

11 (INPUT DRIVE CIRCUIT) DEVICE 8 V CC 2 I kω (MAX.) 390 2 6 2N3906** 0.1 µf BYPASS *74LS04 3 SHIELD 5 GND 2 *ANY TTL GATE **ANY PNP TRANSITOR CMOS OR TTL INTERFACE CIRCUIT 1N4148 620 Ω (MAX.) 2 *74HC04 I kω (MAX.) *74LS05 3 *ANY CMOS HC OR HCT GATE CMOS DRIVE CIRCUIT FOR LOW POWER APPLICATIONS *ANY OPEN COLLECTOR TTL OR OPEN DRAIN CMOS GATE INPUT DRIVE CIRCUIT FOR HIGH CMR APPLICATIONS Figure 17. Recommended Interface Circuits.

www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright 2003 Agilent Technologies, Inc. Obsoletes 5988-4037EN February 10, 2003 5988-8711EN