GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R December 214 REV DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the. to 1GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. AM83WM-FM-R is AM83WM-BM-R assembled on a gold plated copper flange carrier for screwing on to a metal heat sink. Both parts are RoHS compliant. FEATURES APPLICATIONS Ultra wide bandwidth from MHz to 1GHz High output power, P1dB = 3.dBm High gain, 18dB Input /Output matched to Ohms Software Radio Instrumentation Gain block TYPICAL PERFORMANCE * (Bias Conditions**: V dd = +12V, I dq = 4mA) Parameters Minimum Typical ** Maximum Frequency.1 8GHz. 1GHz Small Signal Gain 14dB 18dB 22dB Gain Ripple ± 3dB ± 4.dB P1dB @ 2GHz 29dBm 3dBm P1dB from.1 to 8GHz > 27dBm Psat @ 2GHz 3dBm 31dBm Psat from.1 to 8.GHz > 28dBm IP3 @ 1GHz 48dBm Input Return Loss 9dB*** 1dB Output Return Loss 7dB*** 1dB Thermal Resistance 4. C/W * Specifications subject to change without notice. ** Gate biases corresponding to above currents are V gs1 =-.7V, I gs1 <.ma, V gs2 =-.7V, I gs2 < 1mA and may vary from lot to lot. Gate currents could reach above limits only near power saturation. DC block needed at input & bias tee at the output. *** Minimum return loss for FM version is guaranteed up to GHz
Gain & Return Losses (db) Gain & Return Losses (db) AMCOM Communications, Inc. AM83WM-BM/FM-R December 214, REV ABSOLUTE MAXIMUM RATING Parameters Symbol Rating Drain source voltage V dd 13V Gate source voltage V gs1 & V gs2-3v Drain source current I dq1.2a Drain source current I dq2.4a Continuous dissipation at 2ºC P t 7.8W Channel temperature T ch 17C Operating temperature T op -C to +8C Storage temperature T sto -C to +13C SMALL SIGNAL DATA* 2 2 Gain 2 2 Gain 1 1 1 1 - Output RL - -1-1 Input RL -1-1 Output RL -2-2 1 2 3 4 6 7 8 9 1-2 -2 Input RL.1.2.3.4. * S-Parameters measured using bias tee at the output. MMIC could be operated at lower than V dd =+12V with almost same small signal parameters.
P3dB (dbm) & η (%) Current (A) P1dB (dbm) & η (%) Current (A) AMCOM Communications, Inc. AM83WM-BM/FM-R December 214, REV POWER DATA* 3 P1dB (I dq =.4A).7 3.6 2. 2.4 1.3 1 P1dB EFF IDS.2.1 1 2 3 4 6 7 8 9 1 3 P3dB (I dq =.4A).7 3.6 2. 2.4 1.3 1 P3dB EFF IDS.2.1 1 2 3 4 6 7 8 9 1 * Power measured using bias tee at the output. MMIC could be operated at lower than V dd =+12V with reduced power output.
AM83WM-BM/FM-R December 214, REV PACKAGE OUTLINE (BM) Gate biases are for reference only and may vary from lot to lot Pin Layout Pin No. Function Bias 1 Vdd1 +12V 2 NC 3 RF in 4 NC Vgs1 -.7V 6 Vgs2 -.7V 7 NC 8 RF out & Vdd2 +12V 9 NC 1 Vgs2
AM83WM-BM/FM-R December 214, REV PACKAGE OUTLINE (FM) Pin Layout Pin No. Function Bias 1 Vdd1 +12V 2 NC 3 RF in 4 NC Vgs1 -.7V 6 Vgs2 -.7V 7 NC 8 RF out & Vdd2 +12V 9 NC 1 Vgs2
AM83WM-BM/FM-R December 214, REV TEST CIRCUIT for BM & FM Package Important Notes: 1- The +12V Bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation
AM83WM-BM/FM-R December 214, REV (3nH is adequate). 2- Recommended current biases are 13mA and 27mA for the first stage and second stage respectively. Gate biases of -.7V are for reference only. V gs1 & V gs2 could be adjusted to vary the currents going thru the first stage (V dd1 pin) and the second stage (V dd2 pin) respectively. 3- Do not apply V dd1 & V dd2 without proper negative voltages on V gs1 & V gs2. 4- The currents flowing out of the V gs1 & V gs2 pins are less than.ma & 1mA respectively at P 1dB. - External 1 μf dipped tantalum capacitor should be attached to V dd1 and V gs1,2 to decouple external bias leads. 6- DC block needed at input & bias tee at the output.