N7 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain pplications Motor controls Converters mplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex N7 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Package Option Packing N7-G 3/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. bsolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Value BS BV DGS Gate-to-source voltage ±3V Operating and storage temperature -55 C to +15 C bsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. ll voltages are referenced to device ground. Typical Thermal Characteristics Package θ ja 3 O C/W * Mounted on FR board; 5mm x 5mm x 1.57mm Product Summary BX /BV DGS (V) Pin Configuration DRIN Product Marking 7W (max) GTE SOURCE W = Code for week sealed = Green Packaging Package may or may not include the following marks: Si or (ON) (min) 6V 7.5Ω 5m Doc.# DSFP-N7 C6813
N7 Thermal Characteristics Package (continuous) (pulsed) Power Dissipation @ = 5 O C R RM TO-36B 115m 8m.36W 115m 8m Notes: (continuous) is limited by max rated T j. Electrical Characteristics ( = 5 C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BS Drain-to-Source breakdown voltage 6 - - V = V, = 1µ (th) Gate threshold voltage 1. -.5 V =, = 5µ (th) Change in (th) with temperature - - -5.5 mv/ O C =, = 5µ I GSS Gate body leakage current - - ±1 n = ±V, = V SS Zero Gate voltage drain current - - 1. - - 5 µ = V, = Max rating = V, =.8Max rating, = 15 O C (ON) On-state Drain current 5 - - m = 1V, Static Drain-to-Source on-state resistance - - 7.5 = 5.V, = 5m Ω - - 7.5 = 1V, = 5m Change in with temperature - - 1. %/ O C = 1V, = 5m G FS Forward transconductance 8 - - mmho, = 5m C ISS Input capacitance - - 5 C OSS Common Source output capacitance - - 5 C RSS Reverse transfer capacitance - - 5. t (ON) Turn-on time - - t (OFF) Turn-off time - - pf ns = V,, f = 1.MHz V DD = 3V, = m, R GEN = 5Ω V SD Diode forward voltage drop - - V = V, I SD = m t rr Reverse recovery time - - ns = V, I SD = 8m Notes: 1. ll D.C. parameters 1% tested at 5 O C unless otherwise stated. (Pulse test: 3µs pulse, % duty cycle.). ll.c. parameters sample tested. Switching Waveforms and Test Circuit 1V INPUT V 1% 9% Pulse Generator VDD R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t f VDD OUTPUT 1% 1% INPUT D.U.T. V 9% 9% Doc.# DSFP-N7 C6813
N7 Typical Performance Curves. Output Characteristics. Saturation Characteristics = 1V = 1V.8 9V 8V 7V.8 9V 8V 7V V 3V 1 3 5 6V 5V 6V 5V V 3V 6 8 1.5 Transconductance vs. Drain Current.5 Power Dissipation vs. Case Temperature G FS (seimens).3. = -55 O C 5 O C 15 O C P D (watts).3. SOT-3.1.1..6.8 1 5 5 75 1 15 15 T C 1. Maximum Rated Safe Operating rea SOT-3 (pulsed) 1. Thermal Response Characteristics.1.1 SOT-3 (DC) = 5 O C Thermal Resistance.8.6. SOT-3 = 5 O C P D =.36W.1.1 1. 1 1.1.1.1 1. 1 t p (seconds) Doc.# DSFP-N7 C6813 3
N7 Typical Performance Curves (cont.) 1.1 BS Variation with Temperature 1 On-Resistance vs. Drain Current 8 = 5.V BS 1. R DSS(ON) (ohms) 6 = 1V.9-5 5 1 15 T j.5 1. 1.5..5..8 Transfer Characteristics = -55 O C 5 O C 15 O C (th) V (th) and R DS Variation with Temperature. 1. @ 1V,.5 1..8 (th) @ 1.m.8.6 6 8 1-5 5 1 15 T j Capacitance vs. Drain-to-Source Voltage 5 f = 1.MHz 1 8 Gate Drive Dynamic Characteristics = 1V C (picofarads) 5 C ISS 6 9 pf = V C OSS 3 pf C RSS 1 3..6.8 1. Q G (nanocoulombs) Doc.# DSFP-N7 C6813
3-Lead Package Outline (K1).9x1.3mm body, 1.1mm height (max), 1.9mm pitch N7 3 D E1 E.5 Gauge 1 e e1 b L L1 Seating Top View View B View B Seating 1 Side View View - Symbol 1 b D E E1 e e1 L L1 θ MIN.89.1.88.3.8.1. O Dimension.95 1.9.5 NOM - -.95 -.9-1.3.5 - (mm) BSC BSC REF MX 1.1.1.5 3..6 1..6 8 O JEDEC Registration TO-36, Variation B, Issue H, Jan. 1999. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO36BK1, Version C139. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http:///packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the (website: http//) 13 ll rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-N7 C6813 5 135 Bordeaux Drive, Sunnyvale, C 989 Tel: 8--8888