Supertex inc. TN2106. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
|
|
- Gyles Samson Black
- 5 years ago
- Views:
Transcription
1 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain pplications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo-voltaic drives nalog switches General purpose line drivers Telecom switches N-Channel Enhancement-Mode Vertical DMOS FET TN216 General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Package Option Packing TN216K1-G TO-236B (SOT-23) 3/Reel TN216N3-G 1/Bag TN216N3-G P2 TN216N3-G P3 TN216N3-G P5 TN216N3-G P13 TN216N3-G P14 2/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. bsolute Maximum Ratings Parameter Value Drain-to-source voltage BS Drain-to-gate voltage BV DGS Gate-to-source voltage ±2V Operating and storage temperature -55 O C to +15 O C bsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. ll voltages are referenced to device ground. Typical Thermal Resistance Package TO-236B (SOT-23) θ ja 23 O C/W 132 O C/W Product Summary BS /BV DGS Pin Configuration DRIN GTE SOURCE TO-236B (SOT-23) Product Marking N1LW SOURCE DRIN GTE Package may or may not include the following marks: Si or TO-236B (SOT-23) SiTN 2 16 YYWW (max) W = Code for week sealed = Green Packaging YY = Year Sealed WW = Week Sealed = Green Packaging (th) (max) 6V 2.5Ω 2.V Package may or may not include the following marks: Si or Doc.# DSFP-TN216 B8913
2 Thermal Characteristics Package (continuous) Notes: (continuous) is limited by max rated T j. (pulsed) Electrical Characteristics ( unless otherwise specified) TN216 Sym Parameter Min Typ Max Units Conditions BS Drain-to-source breakdown voltage V = V, = m (th) Gate threshold voltage.6-2. V =, = m Δ(th) Change in (th) with temperature mv/ O C =, = m I GSS Gate body leakage n = ± 2V, = V - - = V, = Max Rating SS Zero gate voltage drain current µ V DS =.8Max Rating, = V, = 125 O C (ON) On-state drain current = 1V, = 25V Static drain-to-source on-state resistance V Ω GS = 4.5V, = 2m = 1V, = 5m Δ Change in with temperature -.7 %/ O C = 1V, = 5m G FS Forward transductance mmho = 25V, = 5m C ISS Input capacitance = V, C OSS Common source output capacitance pf = 25V, C RSS Reverse transfer capacitance f = MHz t d(on) Turn-on delay time t V DD = 25V, r Rise time ns =.5, t d(off) Turn-off delay time R GEN = 25Ω t f Fall time V SD Diode forward voltage drop V = V, I SD = 5m t rr Reverse recovery time ns = V, I SD = 5m Notes: 1. ll D.C. parameters 1% tested at 25 O C unless otherwise stated. (Pulse test: 3µs pulse, 2% duty cycle.) 2. ll.c. parameters sample tested. Switching Waveforms and Test Circuit Power C TO-236B (SOT-23) 28m.8.36W 28m.8 3m.74W 3m R RM INPUT 1V V 1% 9% Pulse Generator VDD R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t f VDD OUTPUT 1% 1% INPUT D.U.T. V 9% 9% Doc.# DSFP-TN216 B8913 2
3 TN216 Typical Performance Curves 2.5 Output Characteristics 2.5 Saturation Characteristics = 1V = 1V V 6V 1.5 8V 6V.5 4V.5 4V 3V V Transconductance vs. Drain Current.5 = 25V Power Dissipation vs. Temperature.4.8 G FS (siemens).3.2 = -55 O C 25 O C 125 O C P D (watts).6.4 SOT ( O C) Maximum Rated Safe Operating rea SOT-23 (pulsed) SOT-23 (DC) Thermal Resistance (normalized) Thermal Response Characteristics TO-236B P D =.36W t P (seconds) P D = W T C Doc.# DSFP-TN216 B8913 3
4 TN216 Typical Performance Curves (cont.) 1.1 BS Variation with Temperature 1 8. On-Resistance vs. Drain Current = 4.5V BS (normalized) (ohms) = 1V 2..9 C (picofarads) T j ( O C) Transfer Characteristics Capacitance vs. Drain-to-Source Voltage = 25V = -55 O C 125 O C 25 O C f = MHz C ISS (th) (normalized) (th) and Variation with Temperature 2. 1V, m T j ( O C) Gate Drive Dynamic Characteristics = 1V 4. = 2V (normalized) 25 C OSS pf C RSS pf Q G (nanocoulombs) Doc.# DSFP-TN216 B8913 4
5 3-Lead TO-236B (SOT-23) Package Outline (K1) 2.9x1.3mm body, 1.12mm height (max), 1.9mm pitch TN216 3 D E1 E.25 Gauge 1 2 e e1 b L L1 Seating Top View View B View B 2 Seating 1 Side View View - Symbol 1 2 b D E E1 e e1 L L1 θ MIN O Dimension NOM (mm) BSC BSC REF MX O JEDEC Registration TO-236, Variation B, Issue H, Jan This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236BK1, Version C4139. Doc.# DSFP-TN216 B8913 5
6 3-Lead Package Outline (N3) TN216 D Seating L e1 e Front View b c Side View E1 1 3 E 2 Bottom View Dimensions (inches) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the (website: http//) 213 ll rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN216 B8913 Symbol b c D E E1 e e1 L MIN NOM MX * JEDEC Registration. * This dimension is not specified in the JEDEC drawing. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E Bordeaux Drive, Sunnyvale, C 9489 Tel:
BV /BV DS(ON) D(ON) DSS DGS
TP61T P-Channel Enhancement-Mode Vertical DMOS FET Features High input impedance and high gain Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability
More informationSupertex inc. TP2104. P-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
TP214 Features High input impedance and high gain Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode Free from secondary
More informationSupertex inc. TN0106. N-Channel Enhancement-Mode Vertical DMOS FET
TN16 N-Channel Enhancement-Mode Vertical DMOS FET Features Low threshold - 2.V max. High input impedance Low input capacitance - 5pF typical Fast switching speeds Low on-resistance Free from secondary
More informationSupertex inc. TN0702. N-Channel Enhancement-Mode Vertical DMOS FET. Features
TN72 Features Low threshold - 1.6V max. High input impedance Low input capacitance - 13pF typical Fast switching speeds Low on-resistance guaranteed at = 2, 3, and 5V Free from secondary breakdown Low
More informationSupertex inc. TP0610T. P-Channel Enhancement Mode Vertical DMOS FETs. Features. General Description. Applications. Ordering Information
Supertex inc. P-Channel Enhancement Mode Vertical DMOS FETs Features High input impedance and high gain Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal
More informationDSX DGS DS(ON) D(ON) (V)
N7 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral
More informationSupertex inc. TN2640. N-Channel Enhancement-Mode Vertical DMOS FETs. Features
TN264 Features Low threshold (2.V max.) High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage pplications Logic level
More informationSupertex inc. TN2510. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
TN51 N-Channel Enhancement-Mode Vertical DMOS FET Features Low threshold (.V max.) High input impedance Low input capacitance (15pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown
More informationSupertex inc. TN0604. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
TN64 N-Channel Enhancement-Mode ertical DMOS FET Features Low threshold (1.6 max.) High input impedance Low input capacitance (14pF typical) Fast switching speeds Low on-resistance Free from secondary
More informationSupertex inc. TP2540. P-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
Features Low threshold (-2.4V max.) High input impedance Low input capacitance (6pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications
More informationBV /BV DS(ON) D(ON) DSS DGS
P-Channel Enhancement-Mode Vertical DMOS FETs VP216 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability
More informationSupertex inc. VN0109. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
VN19 N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability
More informationSupertex inc. TP2510. P-Channel Enhancement-Mode Vertical DMOS FET TP5AW. Features. General Description. Applications. Ordering Information
TP251 P-Channel Enhancement-Mode Vertical DMOS FET Features Low threshold (-2.4V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary
More informationSupertex inc. VP2206. P-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds High input impedance and high gain Excellent thermal stability Integral source-to-drain
More informationSupertex inc. VN10K. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.
VN1K N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability
More informationSupertex inc. DN2540. N-Channel Depletion-Mode Vertical DMOS FETs. General Description. Features. Applications. Ordering Information
Supertex inc. DN254 N-Channel Depletion-Mode Vertical DMOS FETs Features High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output
More informationN-Channel Enhancement-Mode Vertical DMOS FETs
2N72 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability
More informationN- and P-Channel Enhancement-Mode Dual MOSFET
N- and P-Channel Enhancement-Mode Dual MOSFET TC2320 Features Low threshold Low on-resistance Low input capacitance Fast switching speeds Freedom from secondary breakdown Low input and output leakage Independent,
More informationSupertex inc. TC7920. Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes
Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor Integrated
More informationTC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET
Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low
More informationSupertex inc. TC8220. Two Pair, N- and P-Channel Enhancement-Mode MOSFET. Features. General Description. Applications. Typical Application Circuit
Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features High voltage Vertical DMOS technology Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold,
More informationUnderstanding MOSFET Data. Type of Channel N-Channel, or P-Channel. Design Supertex Family Number TO-243AA (SOT-89) Die
Understanding MOSFET Data Application Note The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze
More informationSupertex inc. CL525 Linear, Fixed Constant Current LED Driver Features General Description Applications Typical Application Circuit VIN 4.
Linear, Fixed Constant Current LED Driver Features 25mA ±10% constant current drive 1.0V dropout 90V rating for transient immunity Temperature compensated 4.75-90V supply range Applications Specialty lighting
More informationSupertex inc. HV809. Off-Line, High Voltage EL Lamp Driver. Features. General Description. Applications. Block Diagram.
Off-Line, High Voltage EL Lamp Driver Features Processed with HVCMOS technology Input voltage up to 200V DC 400V peak-to-peak output voltage Output load up to 30nF (00in 2 for 3.nF/in 2 lamp) djustable
More informationSupertex inc. CL2. Simple 90V, 20mA, Temperature Compensated Constant Current LED Driver IC. General Description. Features.
Simple 90V, 20mA, Temperature Compensated Constant Current LED Driver IC Features 5.0 to 90V operating range (V A-B ) 20mA ±10% at 5.0-90V 0.01%/ C typical temperature coefficient Available in TO-243AA
More informationSimple, 90V, 20mA, Temperature Compensated, Constant Current, LED Driver IC
Simple, 90V, 20mA, Temperature Compensated, Constant Current, LED Driver IC Features 5.0 to 90V operating range (V A-B ) 20mA ±10% at 5.0-90V 0.01%/ C typical temperature coefficient Available in TO-243AA
More informationSimple, 90V, 20mA, Temperature Compensated, Constant Current, LED Driver IC
Simple, 90V, 20mA, Temperature Compensated, Constant Current, LED Driver IC Features 5.0 to 90V operating range (V A-B ) 20mA ±5% at 45V (V A-B ) -8.5µA/ C typical temperature coefficient Available in
More informationSupertex inc. MD0105. Four-Channel High Voltage Protection T/R Switch. Features. General Description. Applications. Typical Application Circuit +130V
Four-Channel High Voltage Protection T/R Switch Features Up to ±30V input voltage protection Low on resistance - 5Ω typical Fast switching speed Four electrically isolated channels No external supplies
More informationSupertex inc. HV825. High Voltage EL Lamp Driver IC. Features
High Voltage EL Lamp Driver IC Features Processed with HVCMOS technology.0 to.6v operating supply voltage DC to C conversion Output load of typically up to 6.0nF djustable output lamp frequency djustable
More informationHigh Input Voltage, Adjustable 3-Terminal Linear Regulator
High Input Voltage, Adjustable 3-Terminal Linear Regulator Features 13.2-450V input voltage range Adjustable 1.20-440V output regulation 5% output voltage tolerance Output current limiting 10µA typical
More informationSupertex inc. CL7. Linear, 100mA, Constant Current LED Driver with Enable Input CL7. Features. General Description. Applications
Linear, 100mA, Constant Current LED Driver with Enable Input Features 100mA ±5% constant current drive Built-in reverse polarity protection Logic level enable Dimmable via pin Overtemperature protection
More informationSupertex inc. LR8 High Input Voltage, Adjustable 3-Terminal Linear Regulator Features General Description Applications Typical Application Circuit
Supertex inc. High Input Voltage, Adjustable 3-Terminal Linear Regulator Features 13.2-45 input voltage range Adjustable 1.20-44 output regulation 5% output voltage tolerance Output current limiting 10µA
More informationHigh Input Voltage, Adjustable 3-Terminal Linear Regulator
High Input Voltage, Adjustable 3-Terminal Linear Regulator Features 13.2 to 100V input voltage range Stable with output capacitor Adjustable 1.20 to 88V output regulation 5% reference voltage tolerance
More informationLinear, Fixed Constant Current LED Driver
Linear, Fixed Constant Current LED Driver Features ±10% constant current drive 1.0V dropout 90V rating for transient immunity Temperature compensated 4.75-90V supply range Applications Specialty lighting
More informationHigh Input Voltage SMPS Start-up / Linear Regulator
High Input Voltage SMPS Start-up / Linear Regulator Features ccepts inputs from 15 to 450V Output currents up to 3.0m continuous, 30m peak Supply current typically 50µ Line regulation typically 0.1mV/V
More informationSupertex inc. HV7801 HV7801. High Side Current Monitor 8.0 to 450V Voltage Gain of 5. Features. General Description. Applications
High Side Current Monitor 80 to 450V Voltage Gain of 5 Features Supply voltage 8V to 450V Voltage output device Typical gain 50±1% Max 500mV Fast rise and fall time, 700ns to 20µs Maximum quiescent current
More informationSupertex inc. CL220. Simple, 220V, 20mA, Temperature-Compensated, Constant Current, LED Driver IC. Functional Circuit Diagram.
Supertex inc. CL220 Simple, 220V,, Temperature-Compensated, Constant Current, LED Driver IC Features 5.0 to 220V operating range (V -B ) ±10% at 5.0-160V 0.01% / C typical temperature coefficient vailable
More informationSupertex inc. HV Channel Serial to Parallel Converter With Open Drain Outputs. Features. General Description. Functional Block Diagram
32-Channel Serial to Parallel Converter With Open Drain Outputs Features Processed with HVCMOS technology Output voltages to 225V using a ramped supply voltage SINK current minimum 100mA Shift register
More informationSupertex inc. LN V Cascoded N-Channel MOSFET L 100 YWLL
Features 1200V breakdown voltage Low threshold, 1.V max. High input impedance Low input capacitance Integrated high voltage resistor divider Integrated 1000:1 resistor divider Compact 3x3 LFGA package
More informationSupertex inc. MD0105. Four-Channel High Voltage Protection T/R Switch. Features. General Description. Applications. Typical Application Circuit +130V
Supertex inc. Four-Channel High Voltage Protection T/R Switch Features Up to ±130V input voltage protection Low on resistance - 15Ω typical Fast switching speed Four electrically isolated channels No external
More information32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs VPP. High Voltage. Level Translators & Push-Pull Output Buffers
32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features Processed with HVCMOS technology Low power level shifting Source/sink current minimum 20mA Shift register speed 8.0MHz
More informationSupertex inc. HV Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs. General Description. Features.
32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features Processed with HVCMOS technology Output voltages up to 80V Low power level shifting Shift register speed 8.0MHz ed data
More informationSupertex inc. HV Channel Serial To Parallel Converter With Open Drain Outputs. Features. General Description. Applications.
Supertex inc. HV5523 32-Channel Serial To Parallel Converter With Open Drain Outputs Features Processed with HVCMOS technology Sink current minimum 00mA Shift register speed 6MHz Polarity and blanking
More information8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect. General Description
Features HVCMOS technology Operating output voltage of 250V Low power level shifting from 5.0 to 250V Shift register speed.0mhz @ V DD = 5.0V latch data outputs Output polarity and blanking Output short
More informationSupertex inc. HV264. Quad, High Voltage, Amplifier Array. Features. General Description. Applications. Block Diagram. Supertex inc.
Quad, High Voltage, Amplifier Array Features Four independent high voltage amplifiers 190V output swing 9.0V/µs typical output slew rate Fixed gain of 66.7V/V High value internal feedback resistors Very
More informationElectronic Telephone Line Switch
Electronic Telephone Line Switch Features 350V breakdown voltage 18Ω maximum switch resistance Current limiting protection Operates at 2.3V input Applications General Description The Supertex LG is an
More informationSupertex inc. HV Channel Serial to Parallel Converter With Open Drain Outputs. Features. General Description. Functional Block Diagram
Supertex inc. HV5522 32-Channel Serial to Parallel Converter With Open Drain Outputs Features General Description Processed with HVCMOS technology Sink current minimum 00mA Shift register speed 8.0MHz
More information64-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs
64-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features Processed with HVCMOS technology Operating output voltages to 300V Low power level shifting from 5.0 to 300V Shift register
More information16-Channel Serial to Parallel Converter with High Voltage Backplane Driver and Push-Pull Outputs
16-Channel Serial to Parallel Converter with High Voltage Backplane Driver and Push-Pull Outputs Features HVCMOS technology Output voltage up to +200V Shift register speed 500kHz @ V DD = 1.7V 16 high
More informationSupertex inc. HV2661 Low Charge Injection 24-Channel High Voltage Analog Switch. General Description. Features. Applications.
Low Charge Injection 24-Channel High Voltage Analog Switch Features 24 Channels of high voltage analog switch 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states 20MHz data shift clock frequency
More information3-Channel 25mA Linear LED Driver
-Channel 5mA Linear LED Driver Features ±6% current accuracy @.0-5V 90V standoff voltage Separate enable pins for each channel allow for PWM dimming Over-temperature protection 8-Lead SOIC (w/heat Slug)
More informationHigh Speed, 200V, Full H-Bridge MOSFET Driver
High Speed, 2V, Full H-Bridge MOSFET MD72 Features HVCMOS technology for high performance All N-MOSFET full-bridge driver Designed for 2V bridge supply voltage Up to.mhz operation frequency Greater than
More information32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs VPP. High Voltage. Level Translators & Push-Pull Output Buffers
Supertex inc. HV5308B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features General Description Processed with HVCMOS technology Low power level shifting Source/sink current
More information32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs VPP. High Voltage. Level Translators & Push-Pull Output Buffers
Supertex inc. HV5408B 32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features Processed with HVCMOS technology Low power level shifting SOURCE/SINK current minimum 20mA Shift
More information32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs
32-Channel Serial to Parallel Converter With High Voltage Push-Pull Outputs Features General Description Processed with HVCMOS technology Low power level shifting Source/sink current minimum 20mA Shift
More informationHV9931 Unity Power Factor LED Lamp Driver
Unity Power Factor LED Lamp Driver Features Constant output current Large step-down ratio Unity power factor Low input current harmonic distortion Fixed frequency or fixed off-time operation Internal 450V
More informationLow Charge Injection 8-Channel High Voltage Analog Switches with Bleed Resistors. Level Shifters. Latches D LE CL D LE CL D LE CL D LE CL D LE CL
Low Charge Injection 8-Channel High Voltage Analog Switches with Bleed Resistors Features HVCMOS technology for high performance Very low quiescent power dissipation (10µA max.) Output on-resistance (22Ω
More information24/48V Fan Driver/Controller With High-Side Drive
24/48V Fan Driver/Controller With High-Side Drive Features High-side drive allows use of tachs Direct interface to host controller Noise-immune linear speed control 4-bit digital speed control Operates
More information16-Channel Serial to Parallel Converter with High Voltage Backplane Driver and Push-Pull Outputs
16-Channel Serial to Parallel Converter with High Voltage Backplane Driver and Push-Pull Outputs Features HVCMOS technology Output voltage up to +200V Shift register speed 500kHz @ = 2.0V 16 high voltage
More informationSupertex inc. HV Pin Hotswap, Inrush Current Limiter Controllers (Negative Supply Rail) Features. General Description.
3-Pin Hotswap, Inrush Current Limiter Controllers (Negative Supply Rail) Features Pass element is only external part No sense resistor required Auto-adapt to pass element Short circuit protection UV &
More informationLow Charge Injection 24-Channel SPST High Voltage Analog Switch with Bleed Resistors. Level Shifters. Latches D LE CLR D LE CLR D LE CLR D LE CLR
Low Charge Injection 24-Channel SPST High Voltage nalog Switch with Bleed Resistors Features 24 Channels of high voltage analog switch Integrated bleed resistors on the outputs 3.3 or 5.0V CMOS input logic
More informationHigh Speed ±100V 2A Integrated Ultrasound Pulser
High Speed ±100V 2A Integrated Ultrasound Pulser Features HVCMOS technology for high performance 0 to ±100V output voltage ±2.0A source and sink current Built-in damping for RTZ waveform capability Gate-clamp
More informationSupertex inc. HV Pin Switch-Mode LED Lamp Driver IC HV9922
Supertex inc. HV99 3-Pin Switch-Mode LED Lamp Driver IC Features Constant output current: 50mA Universal 85-65VAC operation Fixed off-time buck converter Internal 475V power MOSFET Applications Decorative
More informationHigh Speed, Integrated Ultrasound Driver IC +10V OUTPA1. 10nF OUTNA1. 10nF DV DD OUTPA2. 10nF OUTNA2. 10nF 48 AVSS -50V 0V OUTPA3 V SS OUTNA3 +10V
Supertex inc. MD7 High Speed, Integrated Ultrasound Driver IC Features Drives two ultrasound transducer channels Generates five-level waveform Drives high voltage MOSFETs ±.0A source and sink peak current
More informationLow Charge Injection 32-Channel High Voltage Analog Switch. General Description. Level Shifters. Latches D LE CLR D LE CLR D LE CLR D LE CLR D LE CLR
Low Charge Injection 32-Channel High Voltage Analog Switch Features 32-Channel high voltage analog switch 2:1 Multiplexer / emultiplexer 3.3V or 5.0V CMOS input logic level 20MHz data shift clock frequency
More informationSupertex inc. HV MHz, 32-Channel Serial to Parallel Converter with Push-Pull Outputs
40MHz, 32-hannel Serial to Parallel onverter with Push-Pull Outputs Features HMOS technology 5.0 logic and 12 supply rail Output voltage up to +200 Low power level shifting Source/sink current minimum
More informationSupertex inc. MD1210. High Speed Dual MOSFET Driver. Supertex MD1210. Features. General Description. Applications. Typical Application Circuit
Supertex inc. MD0 High Speed Dual MOSFET Driver Features 6ns rise and fall time with 000pF load.0a peak output source/sink current.v to 5.0V input CMOS compatible 4.5V to 3V single positive supply voltage
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationSupertex inc. HV816. High Voltage, Dimmable EL Lamp Driver. Features. Applications. General Description
Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features 360V PP output voltage for high brightness Large output load capability of up to 150nF 2.7 to 5.5V operating supply voltage Single lithium
More informationSupertex inc. HV7022C. 34-Channel Symmetric Row Driver. General Description. Features. Functional Block Diagram. Supertex inc.
34-Channel Symmetric Row Driver Features HVCMOS technology Symmetric row drive (reduces latent imaging in ACTFEL displays) Output voltage up to +230V Low power level shifting Source/sink current minimum
More informationHigh Voltage, Low Noise, Inductorless EL Lamp Driver. = 3.4V to 4.2V only) VDD HV850 REL GND 4 CLKIN CLKEN 5
Supertex inc. High Voltage, Low Noise, Inductorless Lamp Driver Features No external components required when using an external clock frequency frequency can be set by an external resistor Low noise DC
More informationSupertex inc. HV9910B. Universal High Brightness LED Driver. Features. General Description. Applications. Typical Application Circuit HV9910B
Supertex inc. HV9910B Universal High Brightness LED Driver Features Switch mode controller for single switch LED drivers Enhanced drop-in replacement to the HV9910 Open loop peak current controller Internal
More informationCS9N2302-S1 20V 3.2 A N-Channel MOSFET CS9N2302-S1. 20V 3.2 A N-Channel MOSFET. Applications. Features. Available Package. General Description
20V 3.2 A N-Channel MOSFET 20V 3.2 A N-Channel MOSFET Features Low on-resistance R DS(ON) = 60 mω (Typ.) @ V GS = 4.5V, ID = 3.2A High current drive I D = 3.2 ma Low gate drive 8V Low threshold 1.0 V (Typ.)
More informationSupertex inc. HV892 HV892. Inductorless Liquid Lens Driver. General Description. Features. Applications. Typical Application Circuit. Supertex inc.
Inductorless Liquid Lens Driver Features Drives capacitive loads up to 200pF Programmable drive amplitude (compatible with 40V RMS to 60V RMS lenses) On-chip boost converter No external inductor I 2 C
More informationTSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 39 @ V GS = -4.5V -4.7-20 52 @ V GS = -2.5V -4.1 68 @ V GS = -1.8V -2.0 Features Advance Trench Process
More informationFour-Channel, High Speed, ±65V 750mA Ultrasound Pulser. General Description C2 C3 C4 VSUB. P-Driver. N-Driver. RGND 1 of 4 Channels GREF VNF HV738
Supertex inc. HV738 Four-Channel, High Speed, ±65V 750mA Ultrasound Pulser Features HVCMOS technology for high performance High density integration ultrasound transmitter 0 to ±65V output voltage ±750mA
More informationNot Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell
More information3-Channel LED Array Driver IC
-Channel LED Array Driver IC Features Integrated 00V, 5Ω (typ.) MOSFETs Programmable output current to 80mA per channel TTL compatible PWM dimming inputs -Phase synchronous operation Leading edge blanking
More information32-Channel, 256 Gray-Shade High Voltage Driver. General Description. High Voltage. Power Supply. High Voltage
Supertex inc. Features HVCMOS technology 5.0V CMOS inputs Output voltage up to +0V PWM gray shade conversion Capable of 256 levels of gray shading 0MHz shift and count clock frequency 20MHz data throughput
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More information32-Channel High Voltage Amplifier Array
32-Channel High Voltage Amplifier Array Features 32 independent high voltage amplifiers 3 operating voltage 295V output voltage 2.2V/µs typical output slew rate Adjustable output current source limit Adjustable
More informationSupertex inc. HV2221. Low Charge Injection, 8-Channel, Unipolar, Negative High Voltage, Analog Switch. Features. General Description.
Supertex inc. HV2221 Low Charge Injection, 8-Channel, Unipolar, Negative High Voltage, Analog Switch Features Low on-resistance, 14Ω max. HVCMOS technology for high performance 3.3 or 5.0V CMOS input logic
More informationCapacitor-Coupled, Switched Shunt, (CCSS) Regulator. All components except for C S D OUT OUT D6 D12 D24 SR10 FB PGND AGND. C FB 470pF D6 D12 D24 SR10
Supertex inc. Capacitor-Coupled, Switched Shunt, (CCSS) Regulator Features Efficiencies up to 75% at 20mA Less than 20mW standby power Optional 6., 12V or 24V fixed output voltage, or adjustable from 6.
More informationInductorless, Dual Output Off-Line Regulators
Inductless, Dual Output Off-Line Regulats Features Accepts peak input voltages up to 700V Operates directly off of rectified 120 230VAC Integrated linear regulat Minimal power dissipation No high voltage
More informationN-Channel Power MOSFET 100V, 46A, 16mΩ
TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationCharacteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.
General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
More informationHV Channel, Low Harmonic Distortion, High Voltage Analog Switch with Bleed Resistors. General Description
Supertex inc. HV2733 16-Channel, Low Harmonic istortion, Analog Switch with Bleed Resistors Features Low harmonic distortion Integrated bleed resistors on the outputs 3.3 or 5.5V CMOS input logic level
More informationHigh-Voltage Current-Mode PWM Controller
HV9112 High-Voltage Current-Mode PWM Controller Features 9. to 8V input voltage range Current-mode control High efficiency Up to 1.MHz internal oscillator Internal start-up circuit Low internal noise 5%
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 48 @ V GS = -10V -5.3-30 79 @ V GS = -4.5V -4.1 Features Advance Trench Process
More informationTSM6866SD 20V Dual N-Channel MOSFET
TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V
More informationLow Charge Injection 32-Channel High Voltage Analog Switch. General Description /V NN. Level Shifters. Latches D LE CLR D LE CLR D LE CLR D LE CLR
Supertex inc. HV2801 Low Charge Injection 32-Channel High Voltage Analog Switch Features 32 Channels of high voltage analog switch 2:1 Multiplexer / emultiplexer 3.3V or 5.0V CMOS input logic level 30MHz
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD UTT50P04
UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
More information