Date:- 1 Nov, 214 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 45 V V DC link Permanent DC voltage for 1 FIT failure rate. 28 V V GES Peak gate emitter voltage ±2 V UNITS RATINGS MAXIMUM LIMITS I C DC collector current, IGBT 16 A I CRM Repetitive peak collector current, t p =1ms, IGBT 32 A I F(DC) Continuous DC forward current, Diode 16 A I FRM Repetitive peak forward current, t p =1ms, Diode 32 A I FSM Peak non-repetitive surge t p =1ms, V RM =6%V RRM, Diode (Note 4) 3 A I FSM2 Peak non-repetitive surge t p =1ms, V RM 1V, Diode (Note 4) 33 A P MAX Maximum power dissipation, IGBT (Note 2) 12.8 kw UNITS (di/dt) cr Critical diode di/dt (note 3) 3 A/µs T j Operating temperature range. -4 to +125 C T stg Storage temperature range. -4 to +125 C Notes: - 1) Unless otherwise indicated T j = 125ºC. 2) T sink = 25 C, double side cooled. 3) Maximum commutation loop inductance 2nH. 4) Half-sinewave, 125 C T j initial. Data Sheet Page 1 of 8 November, 214
Insulated Gate Bi-polar Transistor Type V CE(sat) Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS Collector emitter saturation voltage - 2.75 3.2 I C = 16A, V GE = 15V, T j = 25 C V - 3.5 3.9 I C = 16A, V GE = 15V V V T Threshold voltage - - 1.79 V Current range: 53A 16A r T Slope resistance - - 1.32 mω V GE(TH) Gate threshold voltage - 5.1 - V CE = V GE, I C = 17mA V I CES Collector emitter cut-off current 45 7 V CE = V CES, V GE = V ma I GES Gate leakage current - - ±2 V GE = ±2V µa C ies Input capacitance - 27 - V CE = 25V, V GE = V, f = 1MHz nf t d(on) Turn-on delay time - 2.2 - µs t r (V) Rise time - 4.4 - I C =16A, V CE =28V, di/dt=27a/µs µs Q g(on) Turn-on gate charge - 9 - V GE = ±15V, L s =2nH µc E on Turn-on energy - 12 - R g(on) = 4.3Ω, R g(off) =12Ω, J t d(off) Turn-off delay time - 4.8 - Integral diode used as freewheel diode µs t f (I) Fall time - 2.6 - (Note 3 & 4) µs Q g(off) Turn-off gate charge - 1 - µc E off Turn-off energy - 8.7 - I SC Short circuit current - 5 - V F Diode Characteristics V GE =+15V, V CC =28V, V CEmax V CES, t p 1µs PARAMETER MIN TYP MAX TEST CONDITIONS UNITS Forward voltage - 3.3 3.6 I F = 16A, T j =25 C V - 3.45 3.8 I F = 16A V V To Threshold voltage - - 2.14 V Current range 53A - 16A r T Slope resistance - - 1.4 mω I rm Peak reverse recovery current - 138 - A Q rr Recovered charge - 197 - I F = 16A, V r = 28V, V GE = -15V, µc t rr Reverse recovery time, 5% chord - 1.7 - di/dt=27a/µs µs E r Reverse recovery energy - 2.1 - R thjk R thjk Thermal Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS Thermal resistance junction to sink, IGBT Thermal resistance junction to sink, Diode - - 7.8 Double side cooled K/kW - - 12.8 Collector side cooled K/kW - - 2.3 Emitter side cooled K/kW - - 12.3 Double side cooled K/kW - - 19.5 Cathode side cooled K/kW - - 35.7 Anode side cooled K/kW F Mounting force 5-7 Note 2 kn W t Weight - 2 - kg Notes:- 1) Unless otherwise indicated. 2) Consult application note 28AN1 for detailed mounting requirements 3) C GE is additional gate emitter capacitance added to output of gate drive 4) Figures 6 to 9 are obtained using integral diode as freewheeling diode J A J Data Sheet Page 2 of 8 November, 214
Insulated Gate Bi-polar Transistor Type Curves Figure 1 Typical collector-emitter saturation voltage characteristics Figure 2 Typical output characteristic 1 V GE =+15V 25 T j =25 C 25 C 125 C 2 1 Collector current - I C (A) 1 Collector current - I c (A) 15 1 V GE = 2V V GE = 17V V GE = 15V V GE = 13V V GE = 11V 5 1 1 2 3 4 5 6 Collector to emitter saturation voltage - V CE(sat) (V) 1 2 3 4 5 Collector to emitter saturation voltage - V CE(sat) (V) Figure 3 Typical output characteristic Figure 4 Typical turn-on delay time vs gate resistance 25 15 V CE =28V 2 16A 8A 1 Collector current - I c (A) 15 1 V GE = 2V V GE = 17V V GE = 15V V GE = 13V V GE = 11V Turn-on delay time - t d(on) (µs) 5 5 1 2 3 4 5 Collector to emitter saturation voltage - V CE(sat) (V) 5 1 15 2 25 Gate resistance - R G(on) (Ω ) Data Sheet Page 3 of 8 November, 214
Insulated Gate Bi-polar Transistor Type Figure 5 Typical turn-off delay time vs. gate resistance Figure 6 Typical turn-on energy vs. collector current 14 V CE =28V 15 R G(on) =4.3Ω 12 V CE =28V 16A Turn-off delay time - t d(off) (µs) 1 8 8A Turn-on energy per pulse - E (on) (J) 1 5 V CE =2V 6 V CE =1V 4 1 2 3 4 5 Gate resistance - R G(off) (Ω) 5 1 15 2 Collector current - I C (A) Figure 7 Typical turn-on energy vs. di/dt Figure 8 Typical turn-off energy vs. collector current 4 V CE =28V 1 R G(off) =12Ω V CE =28V 8 3 Turn-on energy per pulse - E (on) (J) 2 I C =16A Turn-on energy per pulse - E (off) (J) 6 4 V CE =2V V CE =1V 1 2 I C =8A 1 2 3 4 5 1 15 2 Collector current - I C (A) Data Sheet Page 4 of 8 November, 214
Insulated Gate Bi-polar Transistor Type Figure 9 Turn-off energy vs voltage Figure 1 Safe operating area (IGBT) 12 4 R G(off) =12Ω Maximum L S =2nH 1 I C =16A 3 8 Turn-off energy - E off (J) 6 I C =12A I C =8A Collector current - I C (A) 2 4 1 I C =4A 2 5 1 15 2 25 3 Collector-emitter voltage - V CE (V) 1 2 3 4 5 Gollector-emitter voltage - V CE (V) Figure 11 Typical diode forward characteristics Figure 12 Typical recovered charge 1 25 T j =25 C 2 I C =16A Instantaneous forward current - I F (A) 1 1 Typical recovered charge - Q rr (µc) 15 1 I C =8A 1 5 1 2 3 4 5 6 Instantaneous forward voltage - V F (V) 5 1 15 2 25 3 35 Data Sheet Page 5 of 8 November, 214
Insulated Gate Bi-polar Transistor Type Figure 13 Typical reverse recovery current Figure 14 Typical reverse recovery time 15 I C =16A 5 Typical reverse recovery current - I rm (A) 1 5 I C =8A Typical reverse recovery time - t rr (µs) 4 3 2 I C =16A 1 I C =8A 5 1 15 2 25 3 35 5 1 15 2 25 3 35 Figure 15 Typical reverse recovery energy Figure 16 Safe operating area (Diode) 3 25 Maximum L S =2nH 2 Typical reverse recovery energy - E r (µs) 2 1 I C =16A I C =8A Reverse recovery current - I r (A) 15 1 5 5 1 15 2 25 3 35 1 2 3 4 Reverse recovery voltage - V r (V) Data Sheet Page 6 of 8 November, 214
Insulated Gate Bi-polar Transistor Type Figure 17 Transient thermal impedance (IGBT) Figure 18 Transient thermal impedance (Diode).1 Emitter Collector Double Side.1 Anode Cathode Double Side.1.1 Transient thermal impedance junction to sink (K/W).1.1 Transient thermal impedance junction to sink (K/W).1.1.1.1.1.1.1.1.1.1 1 1 1 Time (s).1.1.1.1.1.1 1 1 1 Time (s) Data Sheet Page 7 of 8 November, 214
Insulated Gate Bi-polar Transistor Type Outline Drawing & Ordering Information 113A37 ORDERING INFORMATION (Please quote 1 digit code as below) T16 GB 45 G Fixed type Code Fixed Outline Code Voltage Grade V CES /1 45 Typical order code: (V CES = 45V) Fixed format code IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 626 53- Fax: +49 626 53-627 E-mail: marcom@ixys.de IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 ()1249 444524 Fax: +44 ()1249 659448 E-mail: sales@ixysuk.com IXYS Corporation 159 Buckeye Drive Milpitas CA 9535-7418 Tel: +1 (48) 457 9 Fax: +1 (48) 496 67 E-mail: sales@ixys.net www.ixysuk.com www.ixys.net IXYS Long Beach IXYS Long Beach, Inc 25 Mira Mar Ave, Long Beach CA 9815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: service@ixyslongbeach.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet Page 8 of 8 November, 214