Ordering number : EN6C LN1C N-Channel Small Signal MOSFET V,.1A,.8Ω, Single CP http://onsemi.com Features Low ON-resistance Ultrahigh-speed switching.v drive Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS V Gate to Source Voltage VGSS ± V Drain Current (DC) ID.1 A Drain Current (Pulse) IDP PW μs, duty cycle 1%.4 A Allowable Power Dissipation PD. W Channel Temperature Tch C Storage Temperature Tstg -- to + C This product is designed to ESD immunity < V*, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 1A-1..9.1 LN1C-TB-E LN1C-TB-H Ordering & Package Information Device Package Shipping memo LN1C-TB-E LN1C-TB-H CP SC-9, TO-6, SOT-, TO-6AB CP SC-9, TO-6, SOT-, TO-6AB,pcs./ reel,pcs./ reel Pb-Free Pb-Free and Halogen Free.. 1. 1.9.4 Packing Type: TB Marking 1.1. 1 : Gate : Source : Drain TB LOT No. YB LOT No.. CP Electrical Connection 1 Semiconductor Components Industries, LLC, 1 June, 1 661 TKIM TC-91/61 TKIM/6PE MSIM TB-196/14 TSIM TA- No.6-1/6
LN1C Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=V V Zero-Gate Voltage Drain Current IDSS VDS=V, VGS=V 1 μa Gate to Source Leakage Current IGSS VGS=±8V, VDS=V ± μa Cutoff Voltage VGS(off) VDS=V, ID=μA.4 1. V Forward Transfer Admittance yfs VDS=V, ID=mA.1.18 S RDS(on)1 ID=mA, VGS=4V 6.8 Ω On-State Resistance RDS(on) ID=mA, VGS=.V.1 9.9 Ω RDS(on) ID=mA, VGS=1.V Ω Input Capacitance Ciss 6.6 pf Output Capacitance Coss VDS=V, f=1mhz 4. pf Reverse Transfer Capacitance Crss 1. pf Turn-ON Delay Time td(on) 18 ns Rise Time tr 4 ns See specified Test Circuit. Turn-OFF Delay Time td(off) 19 ns Fall Time tf ns Total Gate Charge Qg 1. nc Gate to Source Charge Qgs VDS=V, VGS=V, ID=mA. nc Gate to Drain Miller Charge Qgd. nc Diode Forward Voltage VSD IS=mA, VGS=V.8 1. V Switching Time Test Circuit VIN 4V V PW=μs D.C. 1% VIN VDD=V D ID=mA RL=Ω VOUT G P.G Ω S LN1C No.6-/6
LN1C..9.8..6..4..V 4.V 6.V ID -- VDS.V.V.V V GS =1.V..18.16.14.1..8.6 ID -- VGS Ta= -- C C C V DS =V..4. 1 11 9 8 6 4..4.6.8 1. Drain to Source Voltage, V DS -- V IT4 RDS(on) -- VGS Ta= C ma I D =ma. 1. 1.... Gate to Source Voltage, V GS -- V IT RDS(on) -- ID Ta= C C -- C V GS =4V 1 4 6 8 9 Gate to Source Voltage, V GS -- V IT6 RDS(on) -- ID V GS =.V 1..1 IT RDS(on) -- ID V GS =1.V Ta= C -- C C Ta= C -- C C 1. 14 1 8 6 4.1 RDS(on) -- Ta I D =ma, VGS=.V I D =ma, V GS =4.V IT8 Forward Transfer Admittance, yfs -- S 1..1 1..1 yfs -- ID Ta= -- C C C IT9 V DS =V --6 --4 -- 4 6 8 14 16 Ambient Temperature, Ta -- C IT6.1 IT61 No.6-/6
LN1C Source Current, I S -- A.1 IS -- VSD Ta= C C -- C V GS =V Switching Time, SW Time -- ns SW Time -- ID t d (off) t f t r t d (on) V DD =V V GS =4V Ciss, Coss, Crss -- pf..6..8.9 1. 1.1 Diode Forward Voltage, V SD -- V IT6 Ciss, Coss, Crss -- VDS f=1mhz Ciss Coss Crss Gate to Source Voltage, V GS -- V 9 8 6 4 1 V DS =V I D =ma VGS -- Qg.1 IT6 1.. 1 4 4 Drain to Source Voltage, V DS -- V IT64 PD -- Ta..4.6.8 1. 1. 1.4 1.6 1.8 Total Gate Charge, Qg -- nc IT6 Allowable Power Dissipation, P D -- W...1.1. 4 6 8 14 16 Ambient Temperature, Ta -- C IT6 No.6-4/6
LN1C Outline Drawing LN1C-TB-E, LN1C-TB-H Land Pattern Example Mass (g) Unit * For reference mm Unit: mm.8.4 1..9.9 No.6-/6
LN1C Note on usage : Since the LN1C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.6-6/6