7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motor Drive C and DC Servo Drive mplifier Uninterruptible Power Supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless without specified) Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage CES GES ± IC Continuous Tc= C Collector current Tc= C ICP ms Tc= C 3 Tc= C -IC Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC device Continuous Tc= C Tc= C 7 ± W ICP ms Tc= C 3 Tc= C Collector power disspation Repetitive peak reverse voltage(diode) Repetitive peak off-state voltage Repetitive peak reverse voltage PC RRM DRM RRM device 7 6 6 W verage on-state current Surge n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage verage output current Surge current (Non-Repetitive) IT() ITSM Tjw RRM IO IFSM Hz/6Hz sine wave Tj= C, ms half sine wave Hz/6Hz sine wave Tj= C, ms 4 6 C I t (Non-Repetitive) I t half sine wave s Junction temperature (except Thyristor) Tj + C Storage temperature Tstg -4 to + C Isolation between and copper base * iso C : minute C voltage between thermistor and others *3 C Mounting screw torque.7 * N m Converter Thyristor Brake Inverter * Recommendable value :.3 to.7 N m (M4) * ll s should be connected together when isolation test will be done. *3 Terminal and 9 should be connected together. Terminal to 7 and to 6 should be connected together and shorted to copper base.
7MBRSC Elecical characteristics (Tj= C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES GE(th) CE=, GE= CE=, GE=± CE=, IC=m. 7.. µ n Collector-Emitter saturation voltage CE(sat) GE=, Ic= chip...6 Input capacitance Turn-on time Cies GE=, CE=, f=mhz CC=6 IC=.3...6 pf µs Turn-off GE=±.4. RG=Ω..3 Forward on voltage F IF= chip.3.3 3. Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current r ICES IGES IF= CES=, GE= CE=, GE=± 3 ns µ n Collector-Emitter saturation voltage CE(sat) IC=, GE= chip...6 Turn-on time CC=6 IC=.3...6 µs Turn-off time GE=± RG=Ω.4...3 Reverse current off-state current Reverse current Gate igger current Gate igger voltage On-state voltage IRRM IDM IRRM IGT GT TM R= DM=6 RM=6 D=6, IT= D=6, IT= ITM= chip.9.9.... µ m m m Forward on voltage FM IF= chip... Reverse current Resistance IRRM R R=6 T= C µ Ω Thermistor Converter Thyristor Brake Inverter B value Thermal resistance Characteristics B T= C T=/ C Item Symbol Condition Characteristics Unit Thermal resistance ( device ) Rth(j-c) Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound 46 49 33 337 34 Min. Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Thyristor.67.7.67. C/W Converter Diode. With thermal compound. K
Characteristics (Representative) 7MBRSC Tj= C(typ.) Tj= C(typ.) GE= GE= 3 4 Collector - Emitter voltage : CE [ ] GE= (typ.) Tj= C Tj= C 3 4 Collector - Emitter voltage : CE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= MHz, Tj= C Collector - Emitter voltage : CE [ ] 3 4 Collector - Emitter voltage : CE [ ] 6 4 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= C(typ.) Ic= Ic= Ic= Gate - Emitter voltage : GE [ ] Dynamic Gate charge (typ.) cc=6, Ic=, Tj= C Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Collector - Emitter voltage : CE [ ] 6 4 Gate - Emitter voltage : GE [ ] Cres 3 3 Collector - Emitter voltage : CE [ ] 4 6 Gate charge : Qg [ nc ]
7MBRSC Switching time vs. Collector current (typ.) cc=6, GE=±, Rg=Ω, Tj= C Switching time vs. Collector current (typ.) cc=6, GE=±, Rg=Ω, Tj= C Switching time :,,, [ nsec ] Switching time :,,, [ nsec ] Switching time :,,, [ nsec ] Switching time vs. Gate resistance (typ.) cc=6, Ic=, GE=±, Tj= C Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) cc=6, Ic=, GE=±, Tj= C Switching loss : Eon, Eoff, Err [ mj/pulse ] 3 Switching loss vs. Collector current (typ.) cc=6, GE=±, Rg=Ω Eon( C) Eon( C) Eoff( C) Eoff( C) Err( C) Err( C) Reverse bias safe operating area +GE=, -GE<=, Rg>=Ω, Tj<= C Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon 6 4 Eoff Err Gate resistance : Rg [ Ω ] 6 4 SCSO (non-repetitive pulse) RBSO (Repetitive pulse) 4 6 4 Collector - Emitter voltage : CE [ ]
7MBRSC Forward current vs. Forward on voltage (typ.) 3 Reverse recovery characteristics (typ.) cc=6, GE=±, Rg=Ω Tj= C Tj= C r( C) Forward current : IF [ ] Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] r( C) Irr( C) Irr( C) Forward current : IF [ ] 3 4 Forward on voltage : F [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) Tj= C Tj= C..4...6. Forward on voltage : FM [ ] Transient thermal resistance Instantaneous on-state current [ ] Forward current : IF [ ]..4...6. Instantaneous on-state voltage [ ] [ Thyristor ] On-state current vs. On-state voltage (typ.) Tjw= C Tjw= C [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] Conv. Diode IGBT [Inverter&Brake] Thyristor Resistance : R [ kω ]..... Pulse width : Pw [ sec ]. -6-4 - 4 6 4 6 Temperature [ C ]
7MBRSC Tj= C(typ.) Tj= C(typ.) GE= GE= 3 4 Collector - Emitter voltage : CE [ ] GE= (typ.) Tj= C Tj= C 3 4 Collector - Emitter voltage : CE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= MHz, Tj= C Collector - Emitter voltage : CE [ ] 3 4 Collector - Emitter voltage : CE [ ] 6 4 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= C(typ.) Ic= Ic= Ic= Gate - Emitter voltage : GE [ ] Dynamic Gate charge (typ.) cc=6, Ic=, Tj= C Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Collector - Emitter voltage : CE [ ] 6 4 Gate - Emitter voltage : GE [ ] Cres 3 3 Collector - Emitter voltage : CE [ ] 4 6 Gate charge : Qg [ nc ]
7MBRSC Outline Drawings, mm Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] [ Thyristor ] [ Thermistor ] (P) 6 (P) (Gu) (Gv ) 6 (Gw) 9 (R) (S) 3(T) 7(B) 9(Eu) 7(Ev ) 4(U) (Ew) () 6(W) 4(Gb) 3(Gx) (Gy ) (Gz) 3(N) 4(N) (En)