Ordering number : ENA18B ECH866 Power MOSFET V, 4.A, 9mΩ, V, 4.A, 9mΩ, Complementary Dual ECH8 http://onsemi.com Features The ECH866 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enablimg high-density mounting 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS -- V Gate-to-Source Voltage VGSS ± ± V Drain Current (DC) ID 4. --4. A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% -- A Allowable Power Dissipation PD When mounted on ceramic substrate (1mm.8mm) 1unit 1. W Total Dissipation PT When mounted on ceramic substrate (1mm.8mm) 1. W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 11A-1 Product & Package Information Package : ECH8 JEITA, JEDEC : - Minimum Packing Quantity :, pcs./reel.8.. Top View.9 8.1 ECH866-TL-H to. Packing Type : TL TL Marking TF Lot No.. 1 4.6. Electrical Connection 8 6.9. 1 : Source1 : Gate1 : Source 4 : Gate : Drain 6 : Drain : Drain1 8 : Drain1 1 4 Bottom View ECH8 Semiconductor Components Industries, LLC, 1 July, 1 41 TKIM/D1 TKIM/N198PE MSIM TC-169 No. A18-1/8
ECH866 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=V V Zero-Gate Voltage Drain Current IDSS VDS=V, VGS=V 1 μa Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=1V, ID=1mA 1..6 V Forward Transfer Admittance yfs VDS=1V, ID=A 1 1.66 S RDS(on)1 ID=A, VGS=1V 4 9 mω Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=4.V 8 119 mω RDS(on) ID=1A, VGS=4V 11 1 mω Input Capacitance Ciss VDS=1V, f=1mhz 4 pf Output Capacitance Coss VDS=1V, f=1mhz 4 pf Reverse Transfer Capacitance Crss VDS=1V, f=1mhz pf Turn-ON Delay Time td(on) See specified Test Circuit. 6. ns Rise Time tr See specified Test Circuit. 11 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 1 ns Fall Time tf See specified Test Circuit.. ns Total Gate Charge Qg VDS=1V, VGS=1V, ID=4.A 4.4 nc Gate-to-Source Charge Qgs VDS=1V, VGS=1V, ID=4.A 1.1 nc Gate-to-Drain Miller Charge Qgd VDS=1V, VGS=1V, ID=4.A.64 nc Diode Forward Voltage VSD IS=4.A, VGS=V.84 1. V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=V -- V Zero-Gate Voltage Drain Current IDSS VDS=--V, VGS=V --1 μa Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=--1V, ID=--1mA --1. --. V Forward Transfer Admittance yfs VDS=--1V, ID=--A. 4. S RDS(on)1 ID=--A, VGS=--1V 4 9 mω Static Drain-to-Source On-State Resistance RDS(on) ID=--1A, VGS=--4.V 1 1 mω RDS(on) ID=--1A, VGS=--4V 8 11 mω Input Capacitance Ciss VDS=--1V, f=1mhz 4 pf Output Capacitance Coss VDS=--1V, f=1mhz 1 pf Reverse Transfer Capacitance Crss VDS=--1V, f=1mhz pf Turn-ON Delay Time td(on) See specified Test Circuit.. ns Rise Time tr See specified Test Circuit. 6 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 4 ns Fall Time tf See specified Test Circuit. ns Total Gate Charge Qg VDS=--1V, VGS=--1V, ID=--4.A 1 nc Gate-to-Source Charge Qgs VDS=--1V, VGS=--1V, ID=--4.A. nc Gate-to-Drain Miller Charge Qgd VDS=--1V, VGS=--1V, ID=--4.A. nc Diode Forward Voltage VSD IS=--4.A, VGS=V --.8 --1. V Switching Time Test Circuit [N-channel] [P-channel] 1V V VIN VIN VDD=1V ID=A RL=.Ω V --1V VIN VIN VDD= --1V ID= --A RL=.Ω PW=1μs D.C. 1% D VOUT PW=1μs D.C. 1% D VOUT G G P.G Ω S ECH866 P.G Ω S ECH866 No. A18-/8
ECH866 Ordering Information Device Package Shipping memo ECH866-TL-H ECH8,pcs./reel Pb-Free and Halogen Free 4.. 1.V 1.V 6.V 4.V ID -- VDS 4.V 6 ID -- VGS V DS =1V... 1. 1...V VGS =.V 4 1 Ta= C -- C C 4.1...4..6..8.9 1. 1 4 Drain-to-Source Voltage, V DS -- V IT141 Gate-to-Source Voltage, V GS -- V IT1411 RDS(on) -- VGS RDS(on) -- Ta Ta= C Static Drain-to-Source On-State Resistance, R DS (on) -- mω 16 1 8 4 ID=1A A Static Drain-to-Source On-State Resistance, R DS (on) -- mω 16 1 8 4 V GS =4.V, I D =1A V GS =4.V, ID =1A V GS =1.V, I D =A Forward Transfer Admittance, yfs -- S 4 6 8 1 1 14 16 Gate-to-Source Voltage, V GS -- V IT16 yfs -- ID V DS =1V 1. Ta= -- C C C Source Current, I S -- A --6 --4 -- 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT141 IS -- VSD V GS =V 1..1 Ta= C C -- C.1.1.1 1. IT1414.1..4.6.8 1. 1. Diode Forward Voltage, V SD -- V IT141 No. A18-/8
ECH866 Switching Time, SW Time -- ns 1 V DD =1V V GS =1V SW Time -- ID tr td(off) tf t d (on) Ciss, Coss, Crss -- pf 1 Ciss, Coss, Crss -- VDS Ciss Coss Crss f=1mhz Gate-to-Source Voltage, V GS -- V 1..1 1. 1 9 8 6 4 1 V DS =1V I D =4.A VGS -- Qg IT1416 1 4 Total Gate Charge, Qg -- nc IT1418 ID -- VDS --4. --. --. --. --. --1. --1. --. --1.V --6.V --4.V --4.V --.V --.V VGS= --.V 1 1 1 1. IDP=A I D =4.A Drain-to-Source Voltage, V DS -- V A S O Operation in this area is limited by R DS (on). 1ms 1ms 1μs 1ms DC operation (Ta= C) IT141 PW 1μs.1 Ta= C Single pulse When mounted on ceramic substrate (1mm.1.8mm).1 1. 1 Drain-to-Source Voltage, V DS -- V IT1419 ID -- VGS --6 VDS = --1V -- --4 -- -- --1 1 1 Ta= C -- C C Static Drain-to-Source On-State Resistance, R DS (on) -- mω --.1 --. --. --.4 --. --.6 --. --.8 --.9 --1. --. --1. --1. --. --. --. --. --4. Drain-to-Source Voltage, V DS -- V IT14186 Gate-to-Source Voltage, V GS -- V IT1418 18 RDS(on) -- VGS RDS(on) -- Ta 16 Ta= C 16 I D = --1A --A 14 14 1 1 8 6 4 Static Drain-to-Source On-State Resistance, R DS (on) -- mω 1 1 8 6 4 VGS = --4.V, I D= --1A VGS= --4.V, ID = --1A VGS= --1.V, ID= --A -- --4 --6 --8 --1 --1 --14 --16 Gate-to-Source Voltage, V GS -- V IT164 --6 --4 -- 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT14189 No. A18-4/8
ECH866 Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns V DS = --1V 1 1..1.1 --.1 --.1 --.1 --1. --1 IT1419 1 SW Time -- ID V DD = --1V V GS = --1V 1 yfs -- ID Ta= -- C C t d (off) tf tr t d (on) C Source Current, I S -- A Ciss, Coss, Crss -- pf --1 --1. --.1 --.1 --. --.4 --.6 --.8 --1. --1. Diode Forward Voltage, V SD -- V IT14191 1 Ciss, Coss, Crss -- VDS f=1mhz 1 Ta= C IS -- VSD C Ciss Coss Crss -- C V GS =V Gate-to-Source Voltage, V GS -- V Allowable Power Dissipation, P D -- W --.1 --1. --1 IT1419 --1 VGS -- Qg V DS = --1V --9 I D = --4.A --8 -- --6 -- --4 -- -- --1 1 4 6 8 9 1 11 1.8 1.6 1. 1.4 1. 1. 1..8.6.4. Total Gate Charge, Qg -- nc IT14194 PD -- Ta [Nch/Pch] When mounted on ceramic substrate (1mm.8mm) Total Dissipation 1unit --1 --1. IDP = --A ID = --4.A -- --1 --1 -- -- Drain-to-Source Voltage, V DS -- V A S O Operation in this area is limited by R DS (on). 1ms 1ms 1μs 1ms DC operation (Ta= C) PW 1μs -- IT1419 --.1 Ta= C Single pulse When mounted on ceramic substrate (1mm.8mm) --.1 --.1 --1. --1 Drain-to-Source Voltage, V DS -- V IT14196 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT1419 No. A18-/8
ECH866 Embossed Taping Specification ECH866-TL-H No. A18-6/8
ECH866 Outline Drawing ECH866-TL-H Land Pattern Example Mass (g) Unit. * For reference mm Unit: mm.4.8.6.6 No. A18-/8
ECH866 Note on usage : Since the ECH866 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A18-8/8