650V IGBT4 the optimized device for large current modules with 10µs short-circuit withstand time PCIM 2010 Nürnberg, 04.05.2010 Andreas Härtl, Wilhelm Rusche, Marco Bässler, Martin Knecht, Peter Kanschat Infineon Technologies AG
Outline Motivation Design and technology of the 650V IGBT4 Static and dynamic characteristics Softness Short-circuit behavior Page 2
Motivation 600V IGBT3 still a benchmarking device but: optimized for smaller power application and very low stray inductance applications (high di/dt) overvoltage V CE,max = L di/dt provide additional degrees of freedom for applications with larger currents / larger stray inductance 650V IGBT4 higher blocking voltage capability lower overshoot voltage V CE,max lower turn-off current slope di/dt enhanced short circuit withstand time Page 3
Why 650V blocking voltage capability? 3-level topology: Europe typical: 3x 400 V AC 240V phase-neutral nominal North America: 3x 480V AC 277V phase-neutral nominal Operation in Europe + Asia at 3 x 415/240V: Operation in Europe + Asia at 3 x 415/240V: Vpeak(max) = 240V+15% * 2 = 390V Vpeak(max) = 240V+15% * 2 = 390V L1 L1 N N + 0V UPS: 15% over-voltage capability DC bus voltage: +/- 450V Operation in North America at 3 x 480/277V: Vpeak(max) = 277V+15% * 2 = 450V - load steps in UPS effect DC voltage variations L1 standard 600V IGBT and Diodes N not recommendable for 3-Level UPS Page 4
Design and technology of the 650V IGBT4 trench MOS-top-cell thin wafer technology field-stop concept emitter gate decreased channel width difference to 600V IGBT3: increased chip thickness (y) ~+15% reduced MOS channel width (z) ~-20% increased efficiency of the back side p-emitter n fieldstop n - basis (substrate) y z x collector increased thickness increased p emitter Page 5
Static characteristics higher blocking voltage capability: 650V V CE,sat increase compared to 600V IGBT3: ~50mV at 150 C on module level 1 600V IGBT3 650V IGBT4 1 600V IGBT3 650V IGBT4 25 C 150 C 0.75 0.75 I CE / I CE, nom 0.50 I CE / I CE, nom 0.50 0.25 0 0 0.5 1 1.5 2 V CE [V] measured on DBC level for a 200A device 0 0 0.5 1.0 1.5 2.0 2.5 V CE [V] Page 6 0.25
Dynamic characteristics 600V IGBT3 650V IGBT4 I C =300A I C =300A V CE =300V V GE measured in EconoDUAL 3 modules at 25 C 300V 300A ~60nH V CE =300V V GE t=0 1 2µs t=0 1 2µs softer switch-off behavior reduced turn-off current slope di/dt no oscillations at 25 C, less EMI efforts lower overshoot voltage still comparatively low on-state losses and turn-off losses Page 7
di/dt [A/µs] Softness: 600V IGBT3 vs. 650V IGBT4 reduction of turn-off current slope di/dt (on module level by >20%) 2400 2200 600V IGBT3 reduction of maximum overshoot voltage V CE,max (on module level up to 100V) 2000 1800 650V IGBT4 1600 440 460 480 500 V CE,max [V] measured at 25 C on DBC level for a 200A device Page 8
I RMS [A] @ 150 C I RMS [A] @ 150 C IPOSIM: RMS module current 700 200 600 150 100 reduction ~-3.5% @ 4kHz 500 400 300 reduction ~-4% @ 4kHz 50 EconoPACK 4 FS200R06PE3 FS200R07PE4 0 0 5 10 15 20 frequency [khz] 200 reduction of the RMS module current: ~-2... -10% for frequencies 2 to 20kHz EconoDUAL 3 100 FF600R06ME3 FF600R07ME4 0 0 2 4 6 8 10 12 frequency [khz] ~-3... -7% for frequencies 0.25 to 12kHz IPOSIM sim. conditions: R th (hs)=0.09k/w T(ambient)=35 C T vj,op =150 C cos( )=0.85 Page 9
Mechanism of thermal short-circuit destruction heat generation in the chip center during the short circuit pulse temperature maximum at the end of the short-circuit pulse heat diffusion to the back side of the chip temperature increase at the backside p-emitter hole current heat diffusion to the front side of the chip temperature increase at n-source electron leakage current pnp-amplification hole current from the backside p-emitter hot leakage current increasing chip temperature latch-up and destruction of the IGBT F. Hille et al., ISPSD 2010: Failure mechanism and improvement potential of IGBT s short circuit operation 650V IGBT4: 0-2 increased thermal budget (increased chip thickness) 30.04.2010 Dr. Andreas Härtl, IMM INP DC T PM 26 24 22 20 18 16 14 12 10 8 6 4 2 SC turn off 50 150 250 350 450 T/µs reduced short-circuit current (decreased MOS channel width) A bzw. V 26 Copyright Infineon Technologies 2010. All rights reserved. 24 22 20 18 16 14 12 10 8 6 4 2 0-2 SC therm. destr. Ic/A I c Ug/V U +5 g Uc/V U x100 c 50 150 250 350
V GE =15V Short-circuit behavior V CE =200V 300V 360V t p >10µs short-circuit pulse withstand time t p >10µs short-circuit current about 4.5 I nom enhanced short-circuit withstand time different detection mechanisms possible Page 11
Power cycling capability high power cycling capability with the 650V IGBT4 example: T vj =25 C, ΔT=40K 600V IGBT3 / 650V IGBT4: ~15 Mio cycles 600V IGBT2: ~6 Mio cycles Dr. Andreas Härtl, IMM INP DC T PM Copyright Infineon Technologies 2010. All rights reserved.
Medium Power target product portfolio 650V IGBT4 A 600 62mm EconoDUAL 3 EconoPACK 4 400 300 600A* 400A 300A Half Bridge 600A 450A 300A Half Bridge 3 level one phase modules 200 300A 200A 150 100 200A 150A 100A SixPACK 75 *under investigation Dr. Andreas Härtl, IMM INP DC T PM Copyright Infineon Technologies 2010. All rights reserved.
Conclusion 650V IGBT4: increased chip thickness reduced MOS channel width increased efficiency of the back side p-emitter softer switch-off behavior: lower overshoot voltage reduced turn-off current slope di/dt reduced EMI efforts good trade-off: comparatively low on-state and turn-off losses enhanced short-circuit behavior: withstand time >10µs optimized device for larger current applications use of larger DC link voltages and/or higher inductances possible Page 14