Supertex inc. P-Channel Enhancement Mode Vertical DMOS FETs Features High input impedance and high gain Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode Free from secondary breakdown pplications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic systems nalog switches Power management Telecom switches General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Options TO-236B (SOT-23) /BV DGS (V) (max) (Ω) -G -6 1-5 For packaged products, -G indicates package is RoHS compliant ( Green ). Consult factory for die / wafer form part numbers. Refer to Die Specification VF21 for layout and dimensions. (ON) (min) bsolute Maximum Ratings Parameter Value Drain-to-source voltage Drain-to-gate voltage BV DGS Gate-to-source voltage ±2V Operating and storage temperature -55 O C to +15 O C bsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. ll voltages are referenced to device ground. Pin Configuration DRIN Product Marking GTE SOURCE TO-236B (SOT-23) (T) T5W W = Code for week sealed = Green Packaging Package may or may not include the following marks: Si or TO-236B (SOT-23) (T)
Thermal Characteristics Package (continuous) (pulsed) Power Dissipation @ TO-236B (SOT-23) -12-4.36 2 35-12 -4 (continuous) is limited by max rated T j. Electrical Characteristics ( = 25 C unless otherwise specified) (W) θ jc O C/W θ ja O C/W Sym Parameter Min Typ Max Units Conditions Drain-to-source breakdown voltage -6 - - V = V, = -1μ Gate threshold voltage -1. - -2.4 V =, = -1.m Change in with temperature - - 6.5 mv/ O C =, = -1.m I GSS Gate body leakage - - ±1 n = ± 2V, = V SS Zero gate voltage drain current - Switching Waveforms and Test Circuit - -1. - -2 μ R RM = V, = Max Rating =.8 Max Rating, = V, = 125 C (ON) On-state drain current -5 - - m = -4.5V, Static drain-to-source on-state resistance - - 25 V Ω GS = -4.5V, = -25m - 1, = -2m Change in with temperature - - 1. %/ O C, = -2m G FS Forward transconductance 6 - - mmho, = -1m C ISS Input capacitance - - 6 C OSS Common source output capacitance - - 3 C RSS Reverse transfer capacitance - - 1 t d(on) Turn-on delay time - - 1 t r Rise time - - 15 t d(off) Turn-off delay time - - 15 t f Fall time - - 2 pf ns = V, = -25V, f = 1. MHz V DD = -25V, = -18m, R GEN = 25Ω V SD Diode forward voltage drop - - V = V, I SD = -12m t rr Reverse recovery time - 4 - ns = V, I SD = -4m Notes: 1. ll D.C. parameters 1% tested at 25 O C unless otherwise stated. (Pulse test: 3µs pulse, 2% duty cycle.) 2. ll.c. parameters sample tested. INPUT V Pulse Generator -1V 9% R GEN t (ON) t (OFF) D.U.T. OUTPUT V VDD t d(on) t r t d(off) 9% 9% t f INPUT R L V DD Output 2
Typical Performance Curves Output Characteristics Saturation Characteristics -8V -6V -8V -6V -4V -4V -3V -3V -1-2 -3-4 -5-4. -6. -8. -1.5 Transconductance vs. Drain Current.5 Power Dissipation vs. Temperature.4.4 SOT-23 G FS (siemens).3.2 = -55 O C 25 O C P D (watts).3.2 125 O C.1.1 -.2 -.6-1. 25 5 75 1 125 15-1. Maximum Rated Safe Operating rea 1. Thermal Response Characteristics SOT-23 (pulsed) SOT-23 (DC) -.1 -.1 -.1 -.1-1. -1-1 Thermal Resistance.8.6.4.2 SOT-23 P D =.36W.1.1.1 1. 1 t P (seconds) 3
Typical Performance Curves (cont.) 1.1 Variation with Temperature 2 On-Resistance vs. Drain Current 16 = -4.5V 1. (ohms) 12 8. 4..9-5 5 1 15 T j Transfer Characteristics = -25V = -55 O C 25 O C 125 O C and Variation with Temperature 1.2 1.6 @ -1V, -.5 1.1 1.4 1. @ -1.m 1.2.9 1..8.8 -.6-1.7-5 5 1 15 T j Capacitance vs. Drain-to-Source Voltage 1 f = 1.MHz -1 Gate Drive Dynamic Characteristics 75-8. C (picofarads) 5 C ISS -6. -4. 125 pf = -4V 25 C OSS C RSS -1-2 -3-4 35 pf.5 1. 1.5 2. 2.5 Q G (nanocoulombs) 4
3-Lead TO-236B (SOT-23) Package Outline (T) 2.9x1.3mm body, 1.12mm height (max), 1.9mm pitch 3 D E1 E.25 Gauge 1 2 e e1 b L L1 Seating Top View View B View B 2 Seating 1 Side View View - Symbol 1 2 b D E E1 e e1 L L1 θ MIN.89.1.88.3 2.8 2.1 1.2.2 O Dimension.95 1.9.54 NOM - -.95-2.9-1.3.5 - (mm) BSC BSC REF MX 1.12.1 1.2.5 3.4 2.64 1.4.6 8 O JEDEC Registration TO-236, Variation B, Issue H, Jan. 1999. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236BK1, Version C4139. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) 211 Supertex inc. ll rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP- B31411 5 Supertex inc. 1235 Bordeaux Drive, Sunnyvale, C 9489 Tel: 48-222-8888 www.supertex.com