3 Quadrants Standard TRIAC V DRM = 6 V I T(RMS) = 5 A I TSM = 6 A I GT = 35mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 5A) Gate Trigger Current : 35mA High commutation capability. Symbol TO-F Applications General purpose of AC switching, heating control, motor control, etc T T G General Description Semihow s standard TRIAC product is a glass passivated device, has a high commutative performance, stable gate triggering level to temperature and high off state voltage. It is generally suitable for power and phase control in ac application Absolute Maximum Ratings (T J =5 unless otherwise specified ) Symbol Parameter Conditions Ratings Unit V DRM Repetitive Peak Off-State Voltage 6 V Sine wave, 5/6Hz, Gate open V RRM Repetitive Peak Reverse Voltage 6 V I T(AV) Average On-State Current.5 A I T(RMS) R.M.S. On-State Current Full sine wave, T C = 8 o C 5 A I TSM Surge On-State Current ½ cycle, 5Hz/6Hz, Sine wave, Non repetitive 5/6 A I t Fusing Current t = ms 3 A S P GM P G(AV) Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation T J = 5 C 5 W T J = 5 C, over any ms W I FGM Forward Peak Gate Current T J = 5 C, pulse width us A V RGM Reverse Peak Gate Voltage T J = 5 C, pulse width us V T J Operating Junction Temperature -4~+5 o C T STG Storage Temperature -4~+5 o C
Electrical Characteristics (T J =5 unless otherwise specified ) Symbol Parameter Conditions Min Typ Max Unit T J =5 o C - - 5 ua I DRM Repetitive Peak Off-State Current V D = V DRM T J =5 o C - - 5 ma I RRM Repetitive Peak Reverse Current V D = V DRM T J =5 o C - - 5 ua T J =5 o C - - 5 ma I GT Gate Trigger Current V D = V, =33Ω +, -, 3- - - 35 ma T Gate Trigger Voltage V D = V, =33Ω +, -, 3- - -.5 V D Non-Trigger Gate Voltage V D = V, =33Ω, T J =5 o C. - - V V TM Peak On-State Voltage I T = 35A, I G = 5mA -..4 V dv/dt Critical Rate of Rise of Off-State Voltage V D = /3 V DRM, T J =5 o C - - V/us I H Holding current I T =.A - 55 - ma Notes :. Pulse Width.ms, Duty Cycle % Thermal Characteristics Symbol Parameter Conditions Min Typ Max Unit R θjc Thermal Resistance Junction to Case.7 o C/W R θja Thermal Resistance Junction to Ambient 58 o C/W
Typical Characteristics Power dissipation, P D [W] 4 8 o 3 5 o o 9 o 6 o 3 o 5 5 5 3 R.M.S. on state current, I T(RMS) Maximum allowable case temperature, T C 3 9 8 7 6 3 o 6 o o 5 o 8 o 5 5 5 5 3 R.M.S. on state current, I T(RMS) 9 o Fig. R.M.S. current vs. Power dissipation Fig. R.M.S. current vs. Case temperature 3 Gate voltage, [V] 5 I + GT I - GT I - GT3 P G(AV) (W) P GM (5W) Surge on state current, I TSM 5 5 5 5Hz 6Hz - 3 4 Gate current, I G [ma] D Fig 3. Gate power characteristics Time [cycles] Fig 4. Surge on state current rating (Non-repetitive) X (%) I + GT I - GT I - GT3 X (%) V + GT V - GT V - GT3 IGT(t o C) IGT(5 o C) IGT(t o C) IGT(5 o C) -5-5 5 5 75 5 5 Junction temperature, T J -5-5 5 5 75 5 5 Junction temperature, T J Fig 5. Gate trigger current vs. junction temperature Fig 6. Gate trigger voltage vs. junction temperature
Typical Characteristics I H (t o C) X (%) I H (5 o C) Thermal impedance [ o C/W] -5-5 5 5 75 5 5 Junction Temperature, T J - - - Pulse Time [sec] Fig 7. Holding current vs. Junction temperature Fig 8. Thermal Impedance vs. pulse time 3 Instantaneou on state current, I T 5 o C 5 o C R S =.7Ω V TO =.V - 3 4 Instantaneou on state voltage, V T [V] Fig 9. Instantaneous on state current vs. Instantaneous on state voltage Measurement of gate trigger current () Quadrant I () Quadrant II (3) Quadrant III (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet.
Package Dimension TO-F ±. φ3.8±. ±..54±..7±. 5.87±. 3.3±..4±. 6.68±..76±..47max 9.75±..54typ.54typ.8±..5±.